DE68928905T2 - Muster-Herstellungsverfahren - Google Patents
Muster-HerstellungsverfahrenInfo
- Publication number
- DE68928905T2 DE68928905T2 DE68928905T DE68928905T DE68928905T2 DE 68928905 T2 DE68928905 T2 DE 68928905T2 DE 68928905 T DE68928905 T DE 68928905T DE 68928905 T DE68928905 T DE 68928905T DE 68928905 T2 DE68928905 T2 DE 68928905T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- sample manufacturing
- sample
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29986688 | 1988-11-28 | ||
JP21437789 | 1989-08-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68928905D1 DE68928905D1 (de) | 1999-02-25 |
DE68928905T2 true DE68928905T2 (de) | 1999-06-10 |
Family
ID=26520289
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68928905T Expired - Fee Related DE68928905T2 (de) | 1988-11-28 | 1989-11-28 | Muster-Herstellungsverfahren |
Country Status (4)
Country | Link |
---|---|
US (1) | US5122387A (de) |
EP (1) | EP0372790B1 (de) |
JP (1) | JP2538081B2 (de) |
DE (1) | DE68928905T2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06140434A (ja) * | 1992-10-26 | 1994-05-20 | Mitsubishi Electric Corp | 電界効果型トランジスタの製造方法 |
JP3119957B2 (ja) * | 1992-11-30 | 2000-12-25 | 株式会社東芝 | 半導体装置の製造方法 |
JP2565119B2 (ja) * | 1993-11-30 | 1996-12-18 | 日本電気株式会社 | パターン形成方法 |
US6495311B1 (en) | 2000-03-17 | 2002-12-17 | International Business Machines Corporation | Bilayer liftoff process for high moment laminate |
US6541182B1 (en) | 2000-06-09 | 2003-04-01 | Tdk Corporation | Method for forming fine exposure patterns using dual exposure |
US6524937B1 (en) * | 2000-08-23 | 2003-02-25 | Tyco Electronics Corp. | Selective T-gate process |
US6737202B2 (en) | 2002-02-22 | 2004-05-18 | Motorola, Inc. | Method of fabricating a tiered structure using a multi-layered resist stack and use |
KR100755366B1 (ko) * | 2006-02-21 | 2007-09-04 | 삼성전자주식회사 | 포토레지스트 패턴을 이용한 반도체소자의 패턴 형성방법들 |
US8323868B2 (en) * | 2009-11-06 | 2012-12-04 | International Business Machines Corporation | Bilayer systems including a polydimethylglutarimide-based bottom layer and compositions thereof |
US9091932B2 (en) | 2011-09-21 | 2015-07-28 | Stmicroelectronics S.R.L. | Three-dimensional integrated structure having a high shape factor, and related forming method |
CN107134407A (zh) * | 2017-05-12 | 2017-09-05 | 中国科学院微电子研究所 | 一种基于双层光刻胶工艺的二维材料场效应管制造方法 |
JP7214593B2 (ja) * | 2019-08-13 | 2023-01-30 | キオクシア株式会社 | フォトマスクの製造方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3964908A (en) * | 1975-09-22 | 1976-06-22 | International Business Machines Corporation | Positive resists containing dimethylglutarimide units |
US4024293A (en) * | 1975-12-10 | 1977-05-17 | International Business Machines Corporation | High sensitivity resist system for lift-off metallization |
FR2390760A1 (fr) * | 1977-05-12 | 1978-12-08 | Rhone Poulenc Graphic | Nouvelles plaques lithographiques a base de photopolymeres et procedes de mise en oeuvre |
GB1591988A (en) * | 1977-12-29 | 1981-07-01 | Vickers Ltd | Lithographic printing |
US4212935A (en) * | 1978-02-24 | 1980-07-15 | International Business Machines Corporation | Method of modifying the development profile of photoresists |
JPS56122031A (en) * | 1980-03-01 | 1981-09-25 | Japan Synthetic Rubber Co Ltd | Positive type photosensitive resin composition |
JPS5730829A (en) * | 1980-08-01 | 1982-02-19 | Hitachi Ltd | Micropattern formation method |
US4415652A (en) * | 1982-01-04 | 1983-11-15 | E. I. Du Pont De Nemours & Co. | Aqueous processable, positive-working photopolymer compositions |
JPS6091639A (ja) * | 1983-10-26 | 1985-05-23 | Alps Electric Co Ltd | フオトレジストパタ−ンの形成方法 |
US4524121A (en) * | 1983-11-21 | 1985-06-18 | Rohm And Haas Company | Positive photoresists containing preformed polyglutarimide polymer |
WO1986001009A1 (en) * | 1984-07-23 | 1986-02-13 | Nippon Telegraph And Telephone Corporation | Pattern formation |
JPS6180148A (ja) * | 1984-09-27 | 1986-04-23 | Fuji Photo Film Co Ltd | 熱現像感光材料 |
EP0177905B1 (de) * | 1984-10-09 | 1990-12-05 | Hoechst Japan Kabushiki Kaisha | Verfahren zum Entwickeln und zum Entschichten von Photoresistschichten mit quaternären Ammomiumverbindungen |
DE3447357A1 (de) * | 1984-12-24 | 1986-07-03 | Basf Ag, 6700 Ludwigshafen | Trockenfilmresist und verfahren zur herstellung von resistmustern |
GB8512998D0 (en) * | 1985-05-22 | 1985-06-26 | Ciba Geigy Ag | Production of images |
JPS6232453A (ja) * | 1985-08-06 | 1987-02-12 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト用現像液 |
JPS62102241A (ja) * | 1985-10-30 | 1987-05-12 | Tokyo Ohka Kogyo Co Ltd | 感光性組成物 |
DE3705896A1 (de) * | 1986-02-24 | 1987-08-27 | Tokyo Ohka Kogyo Co Ltd | Verfahren zur herstellung eines fotoresistmusters auf einer substratflaeche und ein dafuer geeignetes schaumentfernungsmittel |
US4912018A (en) * | 1986-02-24 | 1990-03-27 | Hoechst Celanese Corporation | High resolution photoresist based on imide containing polymers |
US4806453A (en) * | 1986-05-07 | 1989-02-21 | Shipley Company Inc. | Positive acting bilayer photoresist development |
US4939070A (en) * | 1986-07-28 | 1990-07-03 | Brunsvold William R | Thermally stable photoresists with high sensitivity |
US4791171A (en) * | 1986-12-31 | 1988-12-13 | Shipley Company Inc. | Silylated poly(vinyl)phenol polymers |
US4770739A (en) * | 1987-02-03 | 1988-09-13 | Texas Instruments Incorporated | Bilayer photoresist process |
JPS63246821A (ja) * | 1987-04-02 | 1988-10-13 | Matsushita Electric Ind Co Ltd | パタ−ン形成方法 |
JPS63316436A (ja) * | 1987-06-19 | 1988-12-23 | Sony Corp | レジストパタ−ンの形成方法 |
US4814258A (en) * | 1987-07-24 | 1989-03-21 | Motorola Inc. | PMGI bi-layer lift-off process |
EP0341843A3 (de) * | 1988-05-09 | 1991-03-27 | International Business Machines Corporation | Verfahren zur Herstellung eines Leitermusters |
-
1989
- 1989-11-24 JP JP1305972A patent/JP2538081B2/ja not_active Expired - Fee Related
- 1989-11-28 EP EP89312332A patent/EP0372790B1/de not_active Expired - Lifetime
- 1989-11-28 US US07/442,981 patent/US5122387A/en not_active Expired - Lifetime
- 1989-11-28 DE DE68928905T patent/DE68928905T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0372790A2 (de) | 1990-06-13 |
DE68928905D1 (de) | 1999-02-25 |
US5122387A (en) | 1992-06-16 |
JPH03170936A (ja) | 1991-07-24 |
JP2538081B2 (ja) | 1996-09-25 |
EP0372790A3 (de) | 1991-06-12 |
EP0372790B1 (de) | 1999-01-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |