DE69131762D1 - Herstellungsverfahren für Halbleitereinrichtungen - Google Patents

Herstellungsverfahren für Halbleitereinrichtungen

Info

Publication number
DE69131762D1
DE69131762D1 DE69131762T DE69131762T DE69131762D1 DE 69131762 D1 DE69131762 D1 DE 69131762D1 DE 69131762 T DE69131762 T DE 69131762T DE 69131762 T DE69131762 T DE 69131762T DE 69131762 D1 DE69131762 D1 DE 69131762D1
Authority
DE
Germany
Prior art keywords
manufacturing process
semiconductor devices
semiconductor
devices
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69131762T
Other languages
English (en)
Other versions
DE69131762T2 (de
Inventor
Genzo Momma
Hiroshi Yuzurihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69131762D1 publication Critical patent/DE69131762D1/de
Application granted granted Critical
Publication of DE69131762T2 publication Critical patent/DE69131762T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
DE69131762T 1990-08-24 1991-08-23 Herstellungsverfahren für Halbleitereinrichtungen Expired - Lifetime DE69131762T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP22100090 1990-08-24
JP31807190 1990-11-26
JP3199274A JP2902506B2 (ja) 1990-08-24 1991-08-08 半導体装置の製造方法及び半導体装置

Publications (2)

Publication Number Publication Date
DE69131762D1 true DE69131762D1 (de) 1999-12-09
DE69131762T2 DE69131762T2 (de) 2000-04-20

Family

ID=27327622

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69131762T Expired - Lifetime DE69131762T2 (de) 1990-08-24 1991-08-23 Herstellungsverfahren für Halbleitereinrichtungen

Country Status (4)

Country Link
US (1) US5731131A (de)
EP (1) EP0472217B1 (de)
JP (1) JP2902506B2 (de)
DE (1) DE69131762T2 (de)

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US5235626A (en) * 1991-10-22 1993-08-10 International Business Machines Corporation Segmented mask and exposure system for x-ray lithography
EP0709740A1 (de) * 1994-09-30 1996-05-01 Texas Instruments Incorporated Integrierte Schaltung und Verfahren zur Herstellung derselben
JP3551660B2 (ja) * 1996-10-29 2004-08-11 ソニー株式会社 露光パターンの補正方法および露光パターンの補正装置および露光方法
US5719605A (en) * 1996-11-20 1998-02-17 Lexmark International, Inc. Large array heater chips for thermal ink jet printheads
US6030752A (en) * 1997-02-25 2000-02-29 Advanced Micro Devices, Inc. Method of stitching segments defined by adjacent image patterns during the manufacture of a semiconductor device
JPH11237744A (ja) * 1997-12-18 1999-08-31 Sanee Giken Kk 露光装置および露光方法
SE9800665D0 (sv) * 1998-03-02 1998-03-02 Micronic Laser Systems Ab Improved method for projection printing using a micromirror SLM
KR100282695B1 (ko) * 1998-04-28 2001-03-02 윤종용 반도체 장치의 제조 방법
TW447009B (en) * 1999-02-12 2001-07-21 Nippon Kogaku Kk Scanning exposure method and scanning type exposure device
WO2000067302A1 (fr) * 1999-04-28 2000-11-09 Nikon Corporation Procede d'exposition, dispositif d'exposition, systeme d'exposition, masque et procede de fabrication de composants
US7091136B2 (en) 2001-04-16 2006-08-15 Basol Bulent M Method of forming semiconductor compound film for fabrication of electronic device and film produced by same
US20030087205A1 (en) * 2001-11-06 2003-05-08 Dennis Warner System and method for forming features on a semiconductor substrate
JP4109944B2 (ja) * 2002-09-20 2008-07-02 キヤノン株式会社 固体撮像装置の製造方法
JP2004111866A (ja) * 2002-09-20 2004-04-08 Canon Inc 半導体装置の製造方法
JP2004111867A (ja) 2002-09-20 2004-04-08 Canon Inc 固体撮像素子
JP4310093B2 (ja) 2002-10-09 2009-08-05 キヤノン株式会社 固体撮像素子の製造方法
EP1491965A1 (de) * 2003-06-20 2004-12-29 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
US7016015B2 (en) * 2003-06-20 2006-03-21 Asml Netherlands B.V Lithographic apparatus and device manufacturing method
DE10360536B4 (de) * 2003-09-30 2006-12-21 Infineon Technologies Ag Verfahren zur Inspektion von Masken eines Maskensatzes für eine Mehrfachbelichtung
JP4508619B2 (ja) * 2003-12-03 2010-07-21 キヤノン株式会社 固体撮像装置の製造方法
US7323731B2 (en) 2003-12-12 2008-01-29 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
JP3890333B2 (ja) 2004-02-06 2007-03-07 キヤノン株式会社 固体撮像装置
EP1716450A4 (de) * 2004-02-11 2007-06-27 Ibm Verwendung gemischter basen zur verbesserung strukturierter resistprofile auf chrom- oder empfindlichen substraten
WO2005109512A1 (en) * 2004-05-06 2005-11-17 Canon Kabushiki Kaisha Photoelectric conversion device and manufacturing method thereof
JP4979283B2 (ja) 2006-06-29 2012-07-18 株式会社日立製作所 半導体装置の製造方法および半導体装置
JP4972350B2 (ja) 2006-06-30 2012-07-11 株式会社日立製作所 半導体装置の製造方法
JP5214904B2 (ja) 2007-04-12 2013-06-19 ルネサスエレクトロニクス株式会社 固体撮像素子の製造方法
CN101846878B (zh) * 2010-06-21 2012-07-04 四川虹欧显示器件有限公司 一种大尺寸菲林母版设计及其组合方法
JP5764364B2 (ja) * 2011-03-31 2015-08-19 株式会社ニューフレアテクノロジー 半導体装置の製造方法、描画装置、プログラム及びパターン転写装置
JP2013182943A (ja) 2012-02-29 2013-09-12 Canon Inc 固体撮像装置の製造方法
CN102898774B (zh) * 2012-08-28 2014-08-06 石家庄世易糠醛糠醇有限公司 基于呋喃改性腰果壳油的炭炭复合摩擦树脂材料的制备方法
JP6245474B2 (ja) 2014-04-21 2017-12-13 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、並びに、電子機器
JP6246076B2 (ja) 2014-06-05 2017-12-13 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP6919154B2 (ja) 2016-03-31 2021-08-18 ソニーグループ株式会社 固体撮像素子、撮像装置、および電子機器
JP2017183658A (ja) 2016-03-31 2017-10-05 ソニー株式会社 固体撮像素子、撮像装置、および電子機器

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Publication number Priority date Publication date Assignee Title
JPS5511303A (en) * 1978-07-10 1980-01-26 Chiyou Lsi Gijutsu Kenkyu Kumiai Electron-beam exposure device
JPS62125620A (ja) * 1985-11-26 1987-06-06 Nec Corp 半導体装置の製造方法
GB8610655D0 (en) * 1986-05-01 1986-06-04 Smiths Industries Plc Integrated circuit substrates
US4816692A (en) * 1987-07-08 1989-03-28 International Business Machines Corporation Pattern splicing system and method for scanning of electron beam system
GB8803171D0 (en) * 1988-02-11 1988-03-09 English Electric Valve Co Ltd Imaging apparatus
JP2706099B2 (ja) * 1988-09-06 1998-01-28 富士通株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
EP0472217A1 (de) 1992-02-26
US5731131A (en) 1998-03-24
DE69131762T2 (de) 2000-04-20
JP2902506B2 (ja) 1999-06-07
JPH056849A (ja) 1993-01-14
EP0472217B1 (de) 1999-11-03

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