DE69125498D1 - Halbleiterverrichtungsherstellungsverfahren - Google Patents

Halbleiterverrichtungsherstellungsverfahren

Info

Publication number
DE69125498D1
DE69125498D1 DE69125498T DE69125498T DE69125498D1 DE 69125498 D1 DE69125498 D1 DE 69125498D1 DE 69125498 T DE69125498 T DE 69125498T DE 69125498 T DE69125498 T DE 69125498T DE 69125498 D1 DE69125498 D1 DE 69125498D1
Authority
DE
Germany
Prior art keywords
semiconductor device
device manufacturing
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69125498T
Other languages
English (en)
Other versions
DE69125498T2 (de
Inventor
Hiroyuki Kawahara
Mitsuo Kono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Sumco Techxiv Corp
Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Techxiv Corp, Komatsu Electronic Metals Co Ltd filed Critical Sumco Techxiv Corp
Publication of DE69125498D1 publication Critical patent/DE69125498D1/de
Application granted granted Critical
Publication of DE69125498T2 publication Critical patent/DE69125498T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69125498T 1990-09-14 1991-09-11 Halbleiterverrichtungsherstellungsverfahren Expired - Lifetime DE69125498T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2242558A JP3011982B2 (ja) 1990-09-14 1990-09-14 半導体装置の製造方法
PCT/JP1991/001205 WO1992005578A1 (en) 1990-09-14 1991-09-11 Semiconductor device manufacturing process

Publications (2)

Publication Number Publication Date
DE69125498D1 true DE69125498D1 (de) 1997-05-07
DE69125498T2 DE69125498T2 (de) 1997-07-17

Family

ID=17090883

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69125498T Expired - Lifetime DE69125498T2 (de) 1990-09-14 1991-09-11 Halbleiterverrichtungsherstellungsverfahren

Country Status (5)

Country Link
US (1) US5506154A (de)
EP (1) EP0552366B1 (de)
JP (1) JP3011982B2 (de)
DE (1) DE69125498T2 (de)
WO (1) WO1992005578A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002009081A (ja) * 2000-06-26 2002-01-11 Toshiba Corp 半導体装置及びその製造方法
JP4667030B2 (ja) * 2004-12-10 2011-04-06 キヤノン株式会社 固体撮像装置用の半導体基板とその製造方法
JP2007287860A (ja) * 2006-04-14 2007-11-01 Toshiba Corp 半導体装置の製造方法
US8494817B1 (en) * 2006-11-30 2013-07-23 Pdf Solutions, Inc. Methods for yield variability benchmarking, assessment, quantification, and localization
JP5934218B2 (ja) 2010-09-03 2016-06-15 ジーテイーエイテイー・アイピー・ホールデイング・エルエルシーＧＴＡＴ ＩＰ Ｈｏｌｄｉｎｇ ＬＬＣ ガリウム、インジウムまたはアルミニウムでドープされたケイ素の単結晶
JP2015008314A (ja) * 2014-08-14 2015-01-15 株式会社Sumco エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ
DE102018203945B4 (de) 2018-03-15 2023-08-10 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben
CN114717643A (zh) * 2022-03-02 2022-07-08 扬州方通电子材料科技有限公司 一种超大尺寸半导体单晶硅棒生长方法及单晶硅棒

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5617011A (en) * 1979-07-23 1981-02-18 Toshiba Corp Semiconductor device and manufacture thereof
JPS5680139A (en) * 1979-12-05 1981-07-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS57197827A (en) * 1981-05-29 1982-12-04 Hitachi Ltd Semiconductor substrate
JPS58159334A (ja) * 1982-03-17 1983-09-21 Toshiba Corp 半導体ウエハの処理方法
JPS59127232A (ja) * 1983-01-11 1984-07-23 Seiko Epson Corp 磁気記録媒体
JPS60249336A (ja) * 1984-05-24 1985-12-10 Komatsu Denshi Kinzoku Kk 半導体シリコン基板の処理方法
JPS618930A (ja) * 1984-06-20 1986-01-16 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン 半導体ウエーハの標準化処理方法
DE3473971D1 (en) * 1984-06-20 1988-10-13 Ibm Method of standardization and stabilization of semiconductor wafers
JPS6276714A (ja) * 1985-09-30 1987-04-08 Mitsubishi Metal Corp シリコンウエハ
US4868133A (en) * 1988-02-11 1989-09-19 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using RTA
US4851358A (en) * 1988-02-11 1989-07-25 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing
JPH01208830A (ja) * 1988-02-17 1989-08-22 Fujitsu Ltd シリコン・ウェハ
JPH0750713B2 (ja) * 1990-09-21 1995-05-31 コマツ電子金属株式会社 半導体ウェーハの熱処理方法
JP3232168B2 (ja) * 1993-07-02 2001-11-26 三菱電機株式会社 半導体基板およびその製造方法ならびにその半導体基板を用いた半導体装置

Also Published As

Publication number Publication date
JPH04123435A (ja) 1992-04-23
US5506154A (en) 1996-04-09
WO1992005578A1 (en) 1992-04-02
EP0552366A4 (de) 1994-02-16
JP3011982B2 (ja) 2000-02-21
DE69125498T2 (de) 1997-07-17
EP0552366B1 (de) 1997-04-02
EP0552366A1 (de) 1993-07-28

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