DE3788623D1 - Röntgenstrahlmaske für Halbleiterbelichtung. - Google Patents

Röntgenstrahlmaske für Halbleiterbelichtung.

Info

Publication number
DE3788623D1
DE3788623D1 DE87402438T DE3788623T DE3788623D1 DE 3788623 D1 DE3788623 D1 DE 3788623D1 DE 87402438 T DE87402438 T DE 87402438T DE 3788623 T DE3788623 T DE 3788623T DE 3788623 D1 DE3788623 D1 DE 3788623D1
Authority
DE
Germany
Prior art keywords
ray mask
semiconductor exposure
exposure
semiconductor
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE87402438T
Other languages
English (en)
Other versions
DE3788623T2 (de
Inventor
Kenji Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE3788623D1 publication Critical patent/DE3788623D1/de
Application granted granted Critical
Publication of DE3788623T2 publication Critical patent/DE3788623T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE87402438T 1986-10-28 1987-10-28 Röntgenstrahlmaske für Halbleiterbelichtung. Expired - Fee Related DE3788623T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25479086A JPH0746681B2 (ja) 1986-10-28 1986-10-28 Ｘ線ステッパー用マスクの製造方法

Publications (2)

Publication Number Publication Date
DE3788623D1 true DE3788623D1 (de) 1994-02-10
DE3788623T2 DE3788623T2 (de) 1994-04-28

Family

ID=17269922

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87402438T Expired - Fee Related DE3788623T2 (de) 1986-10-28 1987-10-28 Röntgenstrahlmaske für Halbleiterbelichtung.

Country Status (5)

Country Link
US (1) US4881257A (de)
EP (1) EP0266275B1 (de)
JP (1) JPH0746681B2 (de)
KR (1) KR900007899B1 (de)
DE (1) DE3788623T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5082695A (en) * 1988-03-08 1992-01-21 501 Fujitsu Limited Method of fabricating an x-ray exposure mask
JPH02968A (ja) * 1988-06-08 1990-01-05 Fujitsu Ltd フォトマスク
EP0361516B1 (de) * 1988-09-30 1996-05-01 Canon Kabushiki Kaisha Verfahren zur Herstellung einer Röntgenstrahlmasken-Struktur
JPH02170410A (ja) * 1988-12-23 1990-07-02 Hitachi Ltd 放射線露光用マスクおよびこれを用いた放射線露光方法
JP2805220B2 (ja) * 1989-09-21 1998-09-30 キヤノン株式会社 露光装置
JPH04229613A (ja) * 1990-07-26 1992-08-19 Seiko Epson Corp 半導体装置の製造方法
US5545498A (en) * 1990-07-26 1996-08-13 Seiko Epson Corporation Method of producing semiconductor device and photomask therefor
US5124561A (en) * 1991-04-04 1992-06-23 International Business Machines Corporation Process for X-ray mask warpage reduction
JP3224157B2 (ja) * 1992-03-31 2001-10-29 キヤノン株式会社 Ｘ線マスクとその製造方法、並びに該ｘ線マスクを用いたデバイス製造方法とｘ線露光装置
US5700602A (en) * 1992-08-21 1997-12-23 Intel Corporation Method and apparatus for precision determination of phase-shift in a phase-shifted reticle
US5789118A (en) * 1992-08-21 1998-08-04 Intel Corporation Method and apparatus for precision determination of phase-shift in a phase-shifted reticle
US5881125A (en) * 1992-09-25 1999-03-09 Intel Corporation Attenuated phase-shifted reticle using sub-resolution pattern
AU5681194A (en) * 1993-01-21 1994-08-15 Sematech, Inc. Phase shifting mask structure with multilayer optical coating for improved transmission
US5411824A (en) * 1993-01-21 1995-05-02 Sematech, Inc. Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging
US5418095A (en) * 1993-01-21 1995-05-23 Sematech, Inc. Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process
GB2277998A (en) * 1993-05-13 1994-11-16 Marconi Gec Ltd Mask and apparatus for producing microlenses
DE19512245C2 (de) * 1994-04-01 2002-12-05 Hyundai Electronics Ind Photomaske zum Messen der Auflösung von Belichtungseinrichtungen
US5509041A (en) * 1994-06-30 1996-04-16 Motorola, Inc. X-ray lithography method for irradiating an object to form a pattern thereon
US5595843A (en) * 1995-03-30 1997-01-21 Intel Corporation Layout methodology, mask set, and patterning method for phase-shifting lithography
US6504180B1 (en) * 1998-07-28 2003-01-07 Imec Vzw And Vrije Universiteit Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom
US7253445B2 (en) * 1998-07-28 2007-08-07 Paul Heremans High-efficiency radiating device
JP2000100698A (ja) 1998-09-22 2000-04-07 Mitsubishi Electric Corp Ｘ線マスクおよびその製造方法
JP2001100395A (ja) * 1999-09-30 2001-04-13 Toshiba Corp 露光用マスク及びその製造方法
JP2002170759A (ja) * 2000-12-01 2002-06-14 Nec Corp 電子ビーム・プロジェクション・リソグラフィ用マスクとその製造方法
JP2002222750A (ja) 2001-01-24 2002-08-09 Nec Corp 電子ビーム転写用マスク
US9152036B2 (en) 2013-09-23 2015-10-06 National Synchrotron Radiation Research Center X-ray mask structure and method for preparing the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3742229A (en) * 1972-06-29 1973-06-26 Massachusetts Inst Technology Soft x-ray mask alignment system
US3873824A (en) * 1973-10-01 1975-03-25 Texas Instruments Inc X-ray lithography mask
JPS5350680A (en) * 1976-10-19 1978-05-09 Nec Corp Transfer mask for x-ray exposure and its production
US4260670A (en) * 1979-07-12 1981-04-07 Western Electric Company, Inc. X-ray mask
US4454209A (en) * 1980-12-17 1984-06-12 Westinghouse Electric Corp. High resolution soft x-ray or ion beam lithographic mask
JPS5868748A (ja) * 1981-10-21 1983-04-23 Hitachi Ltd ホトマスクおよびそれを用いた現像方法
JPS5878150A (ja) * 1981-11-02 1983-05-11 Nec Corp ガラスマスク
US4515876A (en) * 1982-07-17 1985-05-07 Nippon Telegraph & Telephone Public Corp. X-Ray lithography mask and method for fabricating the same
US4522842A (en) * 1982-09-09 1985-06-11 At&T Bell Laboratories Boron nitride X-ray masks with controlled stress
JPS59191332A (ja) * 1983-04-14 1984-10-30 Seiko Epson Corp Ｘ線マスク
JPS62119924A (ja) * 1985-11-13 1987-06-01 イ−エムエス・イオ−ネン・ミクロフアブリカチオンス・ジステ−メ・ゲゼルシヤフト・ミト・ベシユレンクテル・ハウツング 透過マスクの作製方法

Also Published As

Publication number Publication date
KR890007391A (ko) 1989-06-19
EP0266275B1 (de) 1993-12-29
EP0266275A2 (de) 1988-05-04
JPS63110634A (ja) 1988-05-16
JPH0746681B2 (ja) 1995-05-17
US4881257A (en) 1989-11-14
DE3788623T2 (de) 1994-04-28
EP0266275A3 (en) 1989-11-15
KR900007899B1 (en) 1990-10-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee