DE68922645D1 - Röntgenstrahlmaske. - Google Patents
Röntgenstrahlmaske.Info
- Publication number
- DE68922645D1 DE68922645D1 DE68922645T DE68922645T DE68922645D1 DE 68922645 D1 DE68922645 D1 DE 68922645D1 DE 68922645 T DE68922645 T DE 68922645T DE 68922645 T DE68922645 T DE 68922645T DE 68922645 D1 DE68922645 D1 DE 68922645D1
- Authority
- DE
- Germany
- Prior art keywords
- ray mask
- mask
- ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5436488A JP2573985B2 (ja) | 1988-03-08 | 1988-03-08 | X線マスク |
JP5436588A JP2757939B2 (ja) | 1988-03-08 | 1988-03-08 | X線マスク |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68922645D1 true DE68922645D1 (de) | 1995-06-22 |
DE68922645T2 DE68922645T2 (de) | 1995-10-05 |
Family
ID=26395119
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68922645T Expired - Fee Related DE68922645T2 (de) | 1988-03-08 | 1989-03-07 | Röntgenstrahlmaske. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5082695A (de) |
EP (1) | EP0332130B1 (de) |
KR (1) | KR930004236B1 (de) |
DE (1) | DE68922645T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5335256A (en) * | 1991-03-18 | 1994-08-02 | Canon Kabushiki Kaisha | Semiconductor substrate including a single or multi-layer film having different densities in the thickness direction |
TW337513B (en) * | 1992-11-23 | 1998-08-01 | Cvd Inc | Chemical vapor deposition-produced silicon carbide having improved properties and preparation process thereof |
US5416821A (en) * | 1993-05-10 | 1995-05-16 | Trw Inc. | Grid formed with a silicon substrate |
KR0138278B1 (ko) * | 1995-01-24 | 1998-04-27 | 김광호 | 엑스레이 리소그래피용 마스크 및 그의 제조방법 |
JPH11162823A (ja) * | 1997-12-01 | 1999-06-18 | Nikon Corp | マスク作製用部材、マスク及びそれらの製造方法 |
KR100447993B1 (ko) * | 1998-12-28 | 2004-10-14 | 주식회사 하이닉스반도체 | 셀 투사 마스크_ |
US6764958B1 (en) * | 2000-07-28 | 2004-07-20 | Applied Materials Inc. | Method of depositing dielectric films |
US6537733B2 (en) * | 2001-02-23 | 2003-03-25 | Applied Materials, Inc. | Method of depositing low dielectric constant silicon carbide layers |
US6656837B2 (en) * | 2001-10-11 | 2003-12-02 | Applied Materials, Inc. | Method of eliminating photoresist poisoning in damascene applications |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US345867A (en) * | 1886-07-20 | Edward sonstadt | ||
GB1039748A (en) * | 1964-07-25 | 1966-08-24 | Ibm | Improvements relating to methods of growing silicon carbide crystals epitaxially |
US3501356A (en) * | 1966-05-12 | 1970-03-17 | Westinghouse Electric Corp | Process for the epitaxial growth of silicon carbide |
US3577285A (en) * | 1968-03-28 | 1971-05-04 | Ibm | Method for epitaxially growing silicon carbide onto a crystalline substrate |
SU438364A1 (ru) * | 1972-09-15 | 1976-07-05 | В. И. Павличенко | Диодный источник света на карбтде кремни |
DE2364989C3 (de) * | 1973-12-28 | 1979-10-18 | Consortium Fuer Elektrochemische Industrie Gmbh, 8000 Muenchen | Verfahren zur Herstellung von Schichten aus Siliciumcarbid auf einem Siliciumsubstrat |
JPS5120869A (en) * | 1974-08-10 | 1976-02-19 | Hitachi Shipbuilding Eng Co | Suichukosotaiheno setsukinsochi |
US4028149A (en) * | 1976-06-30 | 1977-06-07 | Ibm Corporation | Process for forming monocrystalline silicon carbide on silicon substrates |
JPS5320767A (en) * | 1976-08-10 | 1978-02-25 | Nippon Telegr & Teleph Corp <Ntt> | X-ray mask supporting underlayer and its production |
GB2100713B (en) * | 1981-06-23 | 1985-04-24 | Atomic Energy Authority Uk | Modifying the mechanical properties of silicon carbide |
JPS6093440A (ja) * | 1983-10-27 | 1985-05-25 | Mitsubishi Electric Corp | X線露光用マスク |
JPS61198722A (ja) * | 1985-02-28 | 1986-09-03 | Nec Corp | X線露光マスク及びその製造方法 |
JPS61199770A (ja) * | 1985-03-02 | 1986-09-04 | Koga Sangyo Kk | 密閉箱体を有する自動乾海苔製造装置 |
JPH0658874B2 (ja) * | 1986-03-18 | 1994-08-03 | 富士通株式会社 | X線マスクの製造方法 |
EP0244496B1 (de) * | 1986-05-06 | 1991-01-16 | Ibm Deutschland Gmbh | Maske für die Ionen-, Elektronen- oder Röntgenstrahllithographie und Verfahren zur ihrer Herstellung |
JPH0746681B2 (ja) * | 1986-10-28 | 1995-05-17 | 富士通株式会社 | X線ステッパー用マスクの製造方法 |
DE3733311A1 (de) * | 1987-10-02 | 1989-04-13 | Philips Patentverwaltung | Verfahren zur herstellung eines maskentraegers aus sic fuer roentgenstrahllithographie-masken |
JP2692091B2 (ja) * | 1987-10-31 | 1997-12-17 | 株式会社日本自動車部品総合研究所 | 炭化ケイ素半導体膜およびその製造方法 |
-
1989
- 1989-02-24 US US07/314,794 patent/US5082695A/en not_active Expired - Lifetime
- 1989-03-03 KR KR1019890002679A patent/KR930004236B1/ko not_active IP Right Cessation
- 1989-03-07 DE DE68922645T patent/DE68922645T2/de not_active Expired - Fee Related
- 1989-03-07 EP EP89103982A patent/EP0332130B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0332130B1 (de) | 1995-05-17 |
KR890015348A (ko) | 1989-10-30 |
EP0332130A2 (de) | 1989-09-13 |
US5082695A (en) | 1992-01-21 |
EP0332130A3 (de) | 1991-03-20 |
KR930004236B1 (ko) | 1993-05-22 |
DE68922645T2 (de) | 1995-10-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |