DE3579664D1 - Roentgenstrahlbelichtungsgeraet. - Google Patents

Roentgenstrahlbelichtungsgeraet.

Info

Publication number
DE3579664D1
DE3579664D1 DE8585113171T DE3579664T DE3579664D1 DE 3579664 D1 DE3579664 D1 DE 3579664D1 DE 8585113171 T DE8585113171 T DE 8585113171T DE 3579664 T DE3579664 T DE 3579664T DE 3579664 D1 DE3579664 D1 DE 3579664D1
Authority
DE
Germany
Prior art keywords
exposure device
ray exposure
ray
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585113171T
Other languages
English (en)
Inventor
Yukio Kembo
Yoshihiro Komeyama
Minoru Ikeda
Akira Inagaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3579664D1 publication Critical patent/DE3579664D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • G03F7/2039—X-ray radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
DE8585113171T 1984-10-19 1985-10-17 Roentgenstrahlbelichtungsgeraet. Expired - Lifetime DE3579664D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59218383A JPS6197918A (ja) 1984-10-19 1984-10-19 Ｘ線露光装置

Publications (1)

Publication Number Publication Date
DE3579664D1 true DE3579664D1 (de) 1990-10-18

Family

ID=16719037

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585113171T Expired - Lifetime DE3579664D1 (de) 1984-10-19 1985-10-17 Roentgenstrahlbelichtungsgeraet.

Country Status (5)

Country Link
US (1) US4825453A (de)
EP (1) EP0178660B1 (de)
JP (1) JPS6197918A (de)
KR (1) KR900000437B1 (de)
DE (1) DE3579664D1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4648106A (en) * 1984-11-21 1987-03-03 Micronix Corporation Gas control for X-ray lithographic system
JPS62291028A (ja) * 1986-06-10 1987-12-17 Nec Corp Ｘ線露光装置
DE68929356T2 (de) * 1988-06-03 2002-05-23 Canon Kk Verfahren und Vorrichtung zur Belichtung
EP0358521B1 (de) * 1988-09-09 1995-06-07 Canon Kabushiki Kaisha Belichtungsvorrichtung
JPH0276212A (ja) * 1988-09-13 1990-03-15 Canon Inc 多重露光方法
JP2623127B2 (ja) * 1988-10-05 1997-06-25 キヤノン株式会社 Ｘ線露光装置
US5267292A (en) * 1988-10-05 1993-11-30 Canon Kabushiki Kaisha X-ray exposure apparatus
JP2770960B2 (ja) * 1988-10-06 1998-07-02 キヤノン株式会社 Ｓｏｒ−ｘ線露光装置
JPH02156625A (ja) * 1988-12-09 1990-06-15 Canon Inc 直動案内装置
EP0422814B1 (de) * 1989-10-02 1999-03-17 Canon Kabushiki Kaisha Belichtungsvorrichtung
JP2860578B2 (ja) * 1990-03-02 1999-02-24 キヤノン株式会社 露光装置
JP3184582B2 (ja) * 1991-11-01 2001-07-09 キヤノン株式会社 Ｘ線露光装置およびｘ線露光方法
US5572562A (en) * 1993-04-30 1996-11-05 Lsi Logic Corporation Image mask substrate for X-ray semiconductor lithography
US5512395A (en) * 1993-04-30 1996-04-30 Lsi Logic Corporation Image masks for semiconductor lithography
EP1039509A4 (de) * 1997-04-18 2005-01-12 Nikon Corp Ausrichteinrichtung,belichtungsverfahren unter verwendung der ausrichteinrichtung,und verfahren zur herstellung einer schaltungsanordnung
AU2327800A (en) * 1999-02-12 2000-08-29 Nikon Corporation Exposure method and apparatus
US6364386B1 (en) * 1999-10-27 2002-04-02 Agilent Technologies, Inc. Apparatus and method for handling an integrated circuit
US7508487B2 (en) * 2000-06-01 2009-03-24 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
TWI226972B (en) * 2000-06-01 2005-01-21 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
US6576912B2 (en) * 2001-01-03 2003-06-10 Hugo M. Visser Lithographic projection apparatus equipped with extreme ultraviolet window serving simultaneously as vacuum window
JP2002299221A (ja) * 2001-04-02 2002-10-11 Canon Inc Ｘ線露光装置
JP4837556B2 (ja) 2003-04-11 2011-12-14 株式会社ニコン 液浸リソグラフィにおける光学素子の洗浄方法
TWI474380B (zh) * 2003-05-23 2015-02-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
CN105467775B (zh) 2004-06-09 2018-04-10 株式会社尼康 曝光装置及元件制造方法
EP1783822A4 (de) * 2004-06-21 2009-07-15 Nikon Corp Belichtungseinrichtung, belichtungseinrichtungs-elementreinigungsverfahren, belichtungseinrichtungs-wartungsverfahren, wartungseinrichtung und einrichtungsherstellungsverfahren
US8698998B2 (en) * 2004-06-21 2014-04-15 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2307754A (en) * 1940-08-03 1943-01-12 Allis Chalmers Mfg Co Hydrogen-filled apparatus
US2804102A (en) * 1954-08-09 1957-08-27 Ralph D Cooksley Automatic pressure container vacuumizing, filling and charging machine
US4119855A (en) * 1977-07-08 1978-10-10 Massachusetts Institute Of Technology Non vacuum soft x-ray lithographic source
FR2475728A1 (fr) * 1980-02-11 1981-08-14 Cit Alcatel Detecteur de fuites a helium
JPS57169242A (en) * 1981-04-13 1982-10-18 Hitachi Ltd X-ray transferring device
US4349418A (en) * 1981-07-28 1982-09-14 Allied Corporation Production of methylnaphthalenes and tar bases including indole
JPS5873116A (ja) * 1981-10-28 1983-05-02 Hitachi Ltd Ｘ線露光装置
JPS58191433A (ja) * 1982-05-04 1983-11-08 Fujitsu Ltd Ｘ線転写方法および装置
JPS59101833A (ja) * 1982-12-03 1984-06-12 Hitachi Ltd Ｘ線露光装置
JPS6170721A (ja) * 1984-09-14 1986-04-11 Toshiba Corp Ｘ線露光装置
US4648106A (en) * 1984-11-21 1987-03-03 Micronix Corporation Gas control for X-ray lithographic system

Also Published As

Publication number Publication date
KR900000437B1 (ko) 1990-01-30
EP0178660A3 (en) 1988-04-20
KR860003649A (ko) 1986-05-28
JPS6197918A (ja) 1986-05-16
EP0178660A2 (de) 1986-04-23
JPH0564453B2 (de) 1993-09-14
US4825453A (en) 1989-04-25
EP0178660B1 (de) 1990-09-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee