DE69126907D1 - Röntgenstrahlen-Maskenstruktur - Google Patents

Röntgenstrahlen-Maskenstruktur

Info

Publication number
DE69126907D1
DE69126907D1 DE69126907T DE69126907T DE69126907D1 DE 69126907 D1 DE69126907 D1 DE 69126907D1 DE 69126907 T DE69126907 T DE 69126907T DE 69126907 T DE69126907 T DE 69126907T DE 69126907 D1 DE69126907 D1 DE 69126907D1
Authority
DE
Germany
Prior art keywords
mask structure
ray mask
ray
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69126907T
Other languages
English (en)
Other versions
DE69126907T2 (de
Inventor
Hidehiko Fujioka
Takeshi Miyachi
Yasuaki Fukuda
Yuji Chiba
Nobutoshi Mizusawa
Takao Kariya
Shunichi Uzawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69126907D1 publication Critical patent/DE69126907D1/de
Publication of DE69126907T2 publication Critical patent/DE69126907T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24851—Intermediate layer is discontinuous or differential

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69126907T 1990-04-09 1991-04-05 Röntgenstrahlen-Maskenstruktur Expired - Fee Related DE69126907T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9201790A JP2911954B2 (ja) 1990-04-09 1990-04-09 Ｘ線マスク構造体

Publications (2)

Publication Number Publication Date
DE69126907D1 true DE69126907D1 (de) 1997-08-28
DE69126907T2 DE69126907T2 (de) 1997-12-04

Family

ID=14042765

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69126907T Expired - Fee Related DE69126907T2 (de) 1990-04-09 1991-04-05 Röntgenstrahlen-Maskenstruktur

Country Status (4)

Country Link
US (1) US5356686A (de)
EP (1) EP0452043B1 (de)
JP (1) JP2911954B2 (de)
DE (1) DE69126907T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0567561A (ja) * 1991-09-10 1993-03-19 Canon Inc Ｘ線マスク基板とその製造方法およびｘ線マスク
EP0677787B1 (de) * 1994-03-15 1998-10-21 Canon Kabushiki Kaisha Maske und Maskenträger
JP3291408B2 (ja) * 1994-04-04 2002-06-10 キヤノン株式会社 露光装置および集積回路の製造方法
JP2681619B2 (ja) * 1995-02-20 1997-11-26 東京エレクトロン株式会社 プローブ装置
JP3261948B2 (ja) * 1995-03-28 2002-03-04 キヤノン株式会社 Ｘ線露光用マスク及びそれを用いた半導体素子の製造方法
US5854819A (en) * 1996-02-07 1998-12-29 Canon Kabushiki Kaisha Mask supporting device and correction method therefor, and exposure apparatus and device producing method utilizing the same
US6317479B1 (en) 1996-05-17 2001-11-13 Canon Kabushiki Kaisha X-ray mask, and exposure method and apparatus using the same
KR0170594B1 (ko) * 1996-05-25 1999-03-20 양승택 마스크용 글래스 링 구조
US6101237A (en) * 1996-08-28 2000-08-08 Canon Kabushiki Kaisha X-ray mask and X-ray exposure method using the same
JP3450648B2 (ja) 1997-05-09 2003-09-29 キヤノン株式会社 倍率補正装置および倍率補正装置を搭載したｘ線露光装置ならびにデバイス製造方法
JP3348783B2 (ja) 1999-07-28 2002-11-20 日本電気株式会社 重ね合わせ用マーク及び半導体装置
JP2001100395A (ja) 1999-09-30 2001-04-13 Toshiba Corp 露光用マスク及びその製造方法
JP2003007597A (ja) * 2001-06-25 2003-01-10 Canon Inc マスクパターン偏倍方法、偏倍装置及びマスク構造体
JP4463492B2 (ja) * 2003-04-10 2010-05-19 株式会社半導体エネルギー研究所 製造装置
JP4752491B2 (ja) * 2005-12-22 2011-08-17 株式会社ニコン デバイス製造方法、マスク、デバイス
CN102436133A (zh) * 2011-08-17 2012-05-02 上海华力微电子有限公司 一种用于防止光掩模版应力传递致主图形移动的方法
CN102436134A (zh) * 2011-08-29 2012-05-02 上海华力微电子有限公司 一种用于非透光切割道中防止光掩模版应力损坏的方法
JP6185498B2 (ja) * 2015-02-12 2017-08-23 株式会社半導体エネルギー研究所 蒸着用マスク

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3524196C3 (de) * 1984-07-06 1994-08-04 Canon Kk Lithografiemaske
US5012500A (en) * 1987-12-29 1991-04-30 Canon Kabushiki Kaisha X-ray mask support member, X-ray mask, and X-ray exposure process using the X-ray mask
EP0323264B1 (de) * 1987-12-29 1997-05-14 Canon Kabushiki Kaisha Röntgenbelichtungsverfahren mit elektrisch leitender Maske
EP0338749A3 (de) * 1988-04-18 1990-05-02 Canon Kabushiki Kaisha Röntgenmaskenstruktur

Also Published As

Publication number Publication date
JP2911954B2 (ja) 1999-06-28
EP0452043A1 (de) 1991-10-16
JPH03290918A (ja) 1991-12-20
DE69126907T2 (de) 1997-12-04
US5356686A (en) 1994-10-18
EP0452043B1 (de) 1997-07-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee