DE3783239D1 - Roentgenstrahlmaske. - Google Patents
Roentgenstrahlmaske.Info
- Publication number
- DE3783239D1 DE3783239D1 DE8787101361T DE3783239T DE3783239D1 DE 3783239 D1 DE3783239 D1 DE 3783239D1 DE 8787101361 T DE8787101361 T DE 8787101361T DE 3783239 T DE3783239 T DE 3783239T DE 3783239 D1 DE3783239 D1 DE 3783239D1
- Authority
- DE
- Germany
- Prior art keywords
- ray mask
- mask
- ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
- Y10S430/168—X-ray exposure process
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61022562A JPS62202518A (ja) | 1986-02-03 | 1986-02-03 | X線露光用マスク |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3783239D1 true DE3783239D1 (de) | 1993-02-11 |
DE3783239T2 DE3783239T2 (de) | 1993-04-29 |
Family
ID=12086305
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787101361T Expired - Fee Related DE3783239T2 (de) | 1986-02-03 | 1987-02-02 | Roentgenstrahlmaske. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4939052A (de) |
EP (1) | EP0231916B1 (de) |
JP (1) | JPS62202518A (de) |
KR (1) | KR900003254B1 (de) |
DE (1) | DE3783239T2 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0682604B2 (ja) * | 1987-08-04 | 1994-10-19 | 三菱電機株式会社 | X線マスク |
JPH02103547A (ja) * | 1988-10-13 | 1990-04-16 | Fujitsu Ltd | 導電性層の形成方法 |
US5422491A (en) * | 1988-11-04 | 1995-06-06 | Fujitsu Limited | Mask and charged particle beam exposure method using the mask |
JP2702183B2 (ja) * | 1988-11-04 | 1998-01-21 | 富士通株式会社 | 半導体製造装置 |
US5262257A (en) * | 1989-07-13 | 1993-11-16 | Canon Kabushiki Kaisha | Mask for lithography |
JP2801270B2 (ja) * | 1989-07-13 | 1998-09-21 | キヤノン株式会社 | マスク作成方法 |
US5258091A (en) * | 1990-09-18 | 1993-11-02 | Sumitomo Electric Industries, Ltd. | Method of producing X-ray window |
US5235626A (en) * | 1991-10-22 | 1993-08-10 | International Business Machines Corporation | Segmented mask and exposure system for x-ray lithography |
SG43954A1 (en) * | 1991-11-15 | 1997-11-14 | Canon Kk | X-ray mask structure and x-ray exposing method and semiconductor device manufactured by use of x-ray mask structure and method for manufacturing x-ray mask structure |
FI93680C (fi) * | 1992-05-07 | 1995-05-10 | Outokumpu Instr Oy | Ohutkalvon tukirakenne ja menetelmä sen valmistamiseksi |
US5418095A (en) * | 1993-01-21 | 1995-05-23 | Sematech, Inc. | Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process |
US5411824A (en) * | 1993-01-21 | 1995-05-02 | Sematech, Inc. | Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging |
AU5681194A (en) * | 1993-01-21 | 1994-08-15 | Sematech, Inc. | Phase shifting mask structure with multilayer optical coating for improved transmission |
US6297169B1 (en) * | 1998-07-27 | 2001-10-02 | Motorola, Inc. | Method for forming a semiconductor device using a mask having a self-assembled monolayer |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3925677A (en) * | 1974-04-15 | 1975-12-09 | Bell Telephone Labor Inc | Platinum oxide lithographic masks |
US4018938A (en) * | 1975-06-30 | 1977-04-19 | International Business Machines Corporation | Fabrication of high aspect ratio masks |
JPS57193031A (en) * | 1981-05-22 | 1982-11-27 | Toshiba Corp | Manufacture of mask substrate for exposing x-ray |
JPS5890729A (ja) * | 1981-11-25 | 1983-05-30 | Nec Corp | X線マスク製作方法 |
JPS60132323A (ja) * | 1983-12-21 | 1985-07-15 | Hitachi Ltd | X線露光用マスクの製造方法 |
US4549939A (en) * | 1984-04-30 | 1985-10-29 | Ppg Industries, Inc. | Photoelectroforming mandrel and method of electroforming |
JPS61245161A (ja) * | 1985-04-23 | 1986-10-31 | Fujitsu Ltd | X線用マスクの製造方法 |
US4696878A (en) * | 1985-08-02 | 1987-09-29 | Micronix Corporation | Additive process for manufacturing a mask for use in X-ray photolithography and the resulting mask |
-
1986
- 1986-02-03 JP JP61022562A patent/JPS62202518A/ja active Granted
-
1987
- 1987-01-28 KR KR1019870000696A patent/KR900003254B1/ko not_active IP Right Cessation
- 1987-02-02 DE DE8787101361T patent/DE3783239T2/de not_active Expired - Fee Related
- 1987-02-02 EP EP87101361A patent/EP0231916B1/de not_active Expired - Lifetime
-
1988
- 1988-12-15 US US07/289,394 patent/US4939052A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0231916B1 (de) | 1992-12-30 |
JPS62202518A (ja) | 1987-09-07 |
DE3783239T2 (de) | 1993-04-29 |
US4939052A (en) | 1990-07-03 |
EP0231916A2 (de) | 1987-08-12 |
JPH0255933B2 (de) | 1990-11-28 |
KR900003254B1 (ko) | 1990-05-12 |
EP0231916A3 (en) | 1989-11-08 |
KR870008378A (ko) | 1987-09-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |