KR900007899B1 - Mask for x-ray stepper - Google Patents

Mask for x-ray stepper

Info

Publication number
KR900007899B1
KR900007899B1 KR8711653A KR870011653A KR900007899B1 KR 900007899 B1 KR900007899 B1 KR 900007899B1 KR 8711653 A KR8711653 A KR 8711653A KR 870011653 A KR870011653 A KR 870011653A KR 900007899 B1 KR900007899 B1 KR 900007899B1
Authority
KR
South Korea
Prior art keywords
area
mask
pattern
region
ring
Prior art date
Application number
KR8711653A
Other languages
English (en)
Other versions
KR890007391A (ko
Inventor
Kengi Nakakawa
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of KR890007391A publication Critical patent/KR890007391A/ko
Application granted granted Critical
Publication of KR900007899B1 publication Critical patent/KR900007899B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
KR8711653A 1986-10-28 1987-10-20 Mask for x-ray stepper KR900007899B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25479086A JPH0746681B2 (ja) 1986-10-28 1986-10-28 Ｘ線ステッパー用マスクの製造方法
JP61-254790 1986-10-28

Publications (2)

Publication Number Publication Date
KR890007391A KR890007391A (ko) 1989-06-19
KR900007899B1 true KR900007899B1 (en) 1990-10-22

Family

ID=17269922

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8711653A KR900007899B1 (en) 1986-10-28 1987-10-20 Mask for x-ray stepper

Country Status (5)

Country Link
US (1) US4881257A (ko)
EP (1) EP0266275B1 (ko)
JP (1) JPH0746681B2 (ko)
KR (1) KR900007899B1 (ko)
DE (1) DE3788623T2 (ko)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5082695A (en) * 1988-03-08 1992-01-21 501 Fujitsu Limited Method of fabricating an x-ray exposure mask
JPH02968A (ja) * 1988-06-08 1990-01-05 Fujitsu Ltd フォトマスク
EP0361516B1 (en) * 1988-09-30 1996-05-01 Canon Kabushiki Kaisha Method of making X-ray mask structure
JPH02170410A (ja) * 1988-12-23 1990-07-02 Hitachi Ltd 放射線露光用マスクおよびこれを用いた放射線露光方法
JP2805220B2 (ja) * 1989-09-21 1998-09-30 キヤノン株式会社 露光装置
US5545498A (en) * 1990-07-26 1996-08-13 Seiko Epson Corporation Method of producing semiconductor device and photomask therefor
JPH04229613A (ja) * 1990-07-26 1992-08-19 Seiko Epson Corp 半導体装置の製造方法
US5124561A (en) * 1991-04-04 1992-06-23 International Business Machines Corporation Process for X-ray mask warpage reduction
JP3224157B2 (ja) * 1992-03-31 2001-10-29 キヤノン株式会社 Ｘ線マスクとその製造方法、並びに該ｘ線マスクを用いたデバイス製造方法とｘ線露光装置
US5700602A (en) * 1992-08-21 1997-12-23 Intel Corporation Method and apparatus for precision determination of phase-shift in a phase-shifted reticle
US5789118A (en) * 1992-08-21 1998-08-04 Intel Corporation Method and apparatus for precision determination of phase-shift in a phase-shifted reticle
US5881125A (en) * 1992-09-25 1999-03-09 Intel Corporation Attenuated phase-shifted reticle using sub-resolution pattern
AU5681194A (en) * 1993-01-21 1994-08-15 Sematech, Inc. Phase shifting mask structure with multilayer optical coating for improved transmission
US5418095A (en) * 1993-01-21 1995-05-23 Sematech, Inc. Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process
US5411824A (en) * 1993-01-21 1995-05-02 Sematech, Inc. Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging
GB2277998A (en) * 1993-05-13 1994-11-16 Marconi Gec Ltd Mask and apparatus for producing microlenses
DE19512245C2 (de) * 1994-04-01 2002-12-05 Hyundai Electronics Ind Photomaske zum Messen der Auflösung von Belichtungseinrichtungen
US5509041A (en) * 1994-06-30 1996-04-16 Motorola, Inc. X-ray lithography method for irradiating an object to form a pattern thereon
US5595843A (en) * 1995-03-30 1997-01-21 Intel Corporation Layout methodology, mask set, and patterning method for phase-shifting lithography
US6504180B1 (en) * 1998-07-28 2003-01-07 Imec Vzw And Vrije Universiteit Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom
US7253445B2 (en) * 1998-07-28 2007-08-07 Paul Heremans High-efficiency radiating device
JP2000100698A (ja) 1998-09-22 2000-04-07 Mitsubishi Electric Corp Ｘ線マスクおよびその製造方法
JP2001100395A (ja) 1999-09-30 2001-04-13 Toshiba Corp 露光用マスク及びその製造方法
JP2002170759A (ja) * 2000-12-01 2002-06-14 Nec Corp 電子ビーム・プロジェクション・リソグラフィ用マスクとその製造方法
JP2002222750A (ja) 2001-01-24 2002-08-09 Nec Corp 電子ビーム転写用マスク
US9152036B2 (en) 2013-09-23 2015-10-06 National Synchrotron Radiation Research Center X-ray mask structure and method for preparing the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3742229A (en) * 1972-06-29 1973-06-26 Massachusetts Inst Technology Soft x-ray mask alignment system
US3873824A (en) * 1973-10-01 1975-03-25 Texas Instruments Inc X-ray lithography mask
JPS5350680A (en) * 1976-10-19 1978-05-09 Nec Corp Transfer mask for x-ray exposure and its production
US4260670A (en) * 1979-07-12 1981-04-07 Western Electric Company, Inc. X-ray mask
US4454209A (en) * 1980-12-17 1984-06-12 Westinghouse Electric Corp. High resolution soft x-ray or ion beam lithographic mask
JPS5868748A (ja) * 1981-10-21 1983-04-23 Hitachi Ltd ホトマスクおよびそれを用いた現像方法
JPS5878150A (ja) * 1981-11-02 1983-05-11 Nec Corp ガラスマスク
US4515876A (en) * 1982-07-17 1985-05-07 Nippon Telegraph & Telephone Public Corp. X-Ray lithography mask and method for fabricating the same
US4522842A (en) * 1982-09-09 1985-06-11 At&T Bell Laboratories Boron nitride X-ray masks with controlled stress
JPS59191332A (ja) * 1983-04-14 1984-10-30 Seiko Epson Corp Ｘ線マスク
JPS62119924A (ja) * 1985-11-13 1987-06-01 イ−エムエス・イオ−ネン・ミクロフアブリカチオンス・ジステ−メ・ゲゼルシヤフト・ミト・ベシユレンクテル・ハウツング 透過マスクの作製方法

Also Published As

Publication number Publication date
JPS63110634A (ja) 1988-05-16
DE3788623T2 (de) 1994-04-28
US4881257A (en) 1989-11-14
KR890007391A (ko) 1989-06-19
JPH0746681B2 (ja) 1995-05-17
EP0266275A3 (en) 1989-11-15
EP0266275B1 (en) 1993-12-29
DE3788623D1 (de) 1994-02-10
EP0266275A2 (en) 1988-05-04

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Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee