DE3788623T2 - Röntgenstrahlmaske für Halbleiterbelichtung. - Google Patents
Röntgenstrahlmaske für Halbleiterbelichtung.Info
- Publication number
- DE3788623T2 DE3788623T2 DE87402438T DE3788623T DE3788623T2 DE 3788623 T2 DE3788623 T2 DE 3788623T2 DE 87402438 T DE87402438 T DE 87402438T DE 3788623 T DE3788623 T DE 3788623T DE 3788623 T2 DE3788623 T2 DE 3788623T2
- Authority
- DE
- Germany
- Prior art keywords
- ray mask
- semiconductor exposure
- exposure
- semiconductor
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25479086A JPH0746681B2 (ja) | 1986-10-28 | 1986-10-28 | X線ステッパー用マスクの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3788623D1 DE3788623D1 (de) | 1994-02-10 |
DE3788623T2 true DE3788623T2 (de) | 1994-04-28 |
Family
ID=17269922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE87402438T Expired - Fee Related DE3788623T2 (de) | 1986-10-28 | 1987-10-28 | Röntgenstrahlmaske für Halbleiterbelichtung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4881257A (de) |
EP (1) | EP0266275B1 (de) |
JP (1) | JPH0746681B2 (de) |
KR (1) | KR900007899B1 (de) |
DE (1) | DE3788623T2 (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5082695A (en) * | 1988-03-08 | 1992-01-21 | 501 Fujitsu Limited | Method of fabricating an x-ray exposure mask |
JPH02968A (ja) * | 1988-06-08 | 1990-01-05 | Fujitsu Ltd | フォトマスク |
EP0361516B1 (de) * | 1988-09-30 | 1996-05-01 | Canon Kabushiki Kaisha | Verfahren zur Herstellung einer Röntgenstrahlmasken-Struktur |
JPH02170410A (ja) * | 1988-12-23 | 1990-07-02 | Hitachi Ltd | 放射線露光用マスクおよびこれを用いた放射線露光方法 |
JP2805220B2 (ja) * | 1989-09-21 | 1998-09-30 | キヤノン株式会社 | 露光装置 |
JPH04229613A (ja) * | 1990-07-26 | 1992-08-19 | Seiko Epson Corp | 半導体装置の製造方法 |
US5545498A (en) * | 1990-07-26 | 1996-08-13 | Seiko Epson Corporation | Method of producing semiconductor device and photomask therefor |
US5124561A (en) * | 1991-04-04 | 1992-06-23 | International Business Machines Corporation | Process for X-ray mask warpage reduction |
JP3224157B2 (ja) * | 1992-03-31 | 2001-10-29 | キヤノン株式会社 | X線マスクとその製造方法、並びに該x線マスクを用いたデバイス製造方法とx線露光装置 |
US5789118A (en) * | 1992-08-21 | 1998-08-04 | Intel Corporation | Method and apparatus for precision determination of phase-shift in a phase-shifted reticle |
US5700602A (en) * | 1992-08-21 | 1997-12-23 | Intel Corporation | Method and apparatus for precision determination of phase-shift in a phase-shifted reticle |
US5881125A (en) * | 1992-09-25 | 1999-03-09 | Intel Corporation | Attenuated phase-shifted reticle using sub-resolution pattern |
US5411824A (en) * | 1993-01-21 | 1995-05-02 | Sematech, Inc. | Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging |
AU5681194A (en) * | 1993-01-21 | 1994-08-15 | Sematech, Inc. | Phase shifting mask structure with multilayer optical coating for improved transmission |
US5418095A (en) * | 1993-01-21 | 1995-05-23 | Sematech, Inc. | Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process |
GB2277998A (en) * | 1993-05-13 | 1994-11-16 | Marconi Gec Ltd | Mask and apparatus for producing microlenses |
DE19512245C2 (de) * | 1994-04-01 | 2002-12-05 | Hyundai Electronics Ind | Photomaske zum Messen der Auflösung von Belichtungseinrichtungen |
US5509041A (en) * | 1994-06-30 | 1996-04-16 | Motorola, Inc. | X-ray lithography method for irradiating an object to form a pattern thereon |
US5595843A (en) * | 1995-03-30 | 1997-01-21 | Intel Corporation | Layout methodology, mask set, and patterning method for phase-shifting lithography |
US7253445B2 (en) * | 1998-07-28 | 2007-08-07 | Paul Heremans | High-efficiency radiating device |
US6504180B1 (en) * | 1998-07-28 | 2003-01-07 | Imec Vzw And Vrije Universiteit | Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom |
JP2000100698A (ja) | 1998-09-22 | 2000-04-07 | Mitsubishi Electric Corp | X線マスクおよびその製造方法 |
JP2001100395A (ja) | 1999-09-30 | 2001-04-13 | Toshiba Corp | 露光用マスク及びその製造方法 |
JP2002170759A (ja) * | 2000-12-01 | 2002-06-14 | Nec Corp | 電子ビーム・プロジェクション・リソグラフィ用マスクとその製造方法 |
JP2002222750A (ja) | 2001-01-24 | 2002-08-09 | Nec Corp | 電子ビーム転写用マスク |
US9152036B2 (en) | 2013-09-23 | 2015-10-06 | National Synchrotron Radiation Research Center | X-ray mask structure and method for preparing the same |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3742229A (en) * | 1972-06-29 | 1973-06-26 | Massachusetts Inst Technology | Soft x-ray mask alignment system |
US3873824A (en) * | 1973-10-01 | 1975-03-25 | Texas Instruments Inc | X-ray lithography mask |
JPS5350680A (en) * | 1976-10-19 | 1978-05-09 | Nec Corp | Transfer mask for x-ray exposure and its production |
US4260670A (en) * | 1979-07-12 | 1981-04-07 | Western Electric Company, Inc. | X-ray mask |
US4454209A (en) * | 1980-12-17 | 1984-06-12 | Westinghouse Electric Corp. | High resolution soft x-ray or ion beam lithographic mask |
JPS5868748A (ja) * | 1981-10-21 | 1983-04-23 | Hitachi Ltd | ホトマスクおよびそれを用いた現像方法 |
JPS5878150A (ja) * | 1981-11-02 | 1983-05-11 | Nec Corp | ガラスマスク |
US4515876A (en) * | 1982-07-17 | 1985-05-07 | Nippon Telegraph & Telephone Public Corp. | X-Ray lithography mask and method for fabricating the same |
US4522842A (en) * | 1982-09-09 | 1985-06-11 | At&T Bell Laboratories | Boron nitride X-ray masks with controlled stress |
JPS59191332A (ja) * | 1983-04-14 | 1984-10-30 | Seiko Epson Corp | X線マスク |
EP0222739A3 (de) * | 1985-11-13 | 1989-10-04 | IMS Ionen Mikrofabrikations Systeme Gesellschaft m.b.H. | Verfahren zur Herstellung einer Transmissionsmaske |
-
1986
- 1986-10-28 JP JP25479086A patent/JPH0746681B2/ja not_active Expired - Fee Related
-
1987
- 1987-10-20 KR KR8711653A patent/KR900007899B1/ko not_active IP Right Cessation
- 1987-10-23 US US07/111,679 patent/US4881257A/en not_active Expired - Lifetime
- 1987-10-28 EP EP87402438A patent/EP0266275B1/de not_active Expired - Lifetime
- 1987-10-28 DE DE87402438T patent/DE3788623T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3788623D1 (de) | 1994-02-10 |
KR900007899B1 (en) | 1990-10-22 |
EP0266275B1 (de) | 1993-12-29 |
KR890007391A (ko) | 1989-06-19 |
EP0266275A2 (de) | 1988-05-04 |
EP0266275A3 (en) | 1989-11-15 |
JPS63110634A (ja) | 1988-05-16 |
JPH0746681B2 (ja) | 1995-05-17 |
US4881257A (en) | 1989-11-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3788623T2 (de) | Röntgenstrahlmaske für Halbleiterbelichtung. | |
DE3750174T2 (de) | Belichtungseinrichtung. | |
DE3752388D1 (de) | Verkleinerndes Projektionsbelichtungssystem des Reflexionstyps für Röntgenstrahlung | |
DE68914479T2 (de) | Randbelichtungsverfahren für Halbleiterscheiben. | |
DE3579664D1 (de) | Roentgenstrahlbelichtungsgeraet. | |
DE69023023D1 (de) | Röntgenstrahl-Maskenstruktur und Röntgenstrahl-Belichtungsverfahren. | |
DE3785636T2 (de) | Beleuchtungsapparat für Belichtung. | |
NO842237L (no) | Fleksibel, hurtigbehandlende fotopolymeriserbar sammensetning. | |
NO872759D0 (no) | Innermaske for beskyttelsesmaske. | |
DE68915239D1 (de) | Röntgenbelichtungssystem. | |
DE3783239D1 (de) | Roentgenstrahlmaske. | |
DE68906689T2 (de) | Strahlungsempfindliches Photoresistgemisch für kurzwellige Ultraviolett-Bestrahlung. | |
DE3765851D1 (de) | Maskenanordnung. | |
DE3751342D1 (de) | Halbleiter-Bildaufnahmevorrichtung. | |
DE68922645D1 (de) | Röntgenstrahlmaske. | |
NL187416C (nl) | Stralingsgevoelige halfgeleiderinrichting. | |
DE3855392D1 (de) | Röntgenstrahlbelichtungsvorrichtung | |
DE3381021D1 (de) | Roentgen-strahlenmaske. | |
DE3772467D1 (de) | Belichtungssystem. | |
NO842462L (no) | Utsettingsinnretning for baater. | |
DE3786576D1 (de) | Belichtungsfuehler. | |
DE3768644D1 (de) | Roentgenstrahlenquelle. | |
FI834896A0 (fi) | Flerfunktionsmaskin foer lastning av olika massor, foerflyttning, lossning av laster, spridning ochmyllning | |
ATE47025T1 (de) | Toilettenanlage (w.c). | |
DE3779644T2 (de) | Abziehbare, durch strahlung aushaertbare loetmaske. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |