IT8349330A0 - Metodo per fabbricare un sostrato composito di semiconduttore su isolante, con profilo controllato perdensita' di difetti - Google Patents

Metodo per fabbricare un sostrato composito di semiconduttore su isolante, con profilo controllato perdensita' di difetti

Info

Publication number
IT8349330A0
IT8349330A0 IT8349330A IT4933083A IT8349330A0 IT 8349330 A0 IT8349330 A0 IT 8349330A0 IT 8349330 A IT8349330 A IT 8349330A IT 4933083 A IT4933083 A IT 4933083A IT 8349330 A0 IT8349330 A0 IT 8349330A0
Authority
IT
Italy
Prior art keywords
defensity
insulation
manufacturing
controlled
composite substrate
Prior art date
Application number
IT8349330A
Other languages
English (en)
Other versions
IT1168243B (it
Inventor
Prahalad K Vasudev
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of IT8349330A0 publication Critical patent/IT8349330A0/it
Application granted granted Critical
Publication of IT1168243B publication Critical patent/IT1168243B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26593—Bombardment with radiation with high-energy radiation producing ion implantation at a temperature lower than room temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
IT49330/83A 1982-11-15 1983-11-14 Metodo per fabbricare un sostrato composito di semiconduttore su isolante, con profilo controllato per densita' di difetti IT1168243B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/441,477 US4509990A (en) 1982-11-15 1982-11-15 Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates

Publications (2)

Publication Number Publication Date
IT8349330A0 true IT8349330A0 (it) 1983-11-14
IT1168243B IT1168243B (it) 1987-05-20

Family

ID=23753015

Family Applications (1)

Application Number Title Priority Date Filing Date
IT49330/83A IT1168243B (it) 1982-11-15 1983-11-14 Metodo per fabbricare un sostrato composito di semiconduttore su isolante, con profilo controllato per densita' di difetti

Country Status (6)

Country Link
US (1) US4509990A (it)
EP (1) EP0125260B1 (it)
DE (1) DE3374821D1 (it)
IL (1) IL70018A (it)
IT (1) IT1168243B (it)
WO (1) WO1984002034A1 (it)

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US4710478A (en) * 1985-05-20 1987-12-01 United States Of America As Represented By The Secretary Of The Navy Method for making germanium/gallium arsenide high mobility complementary logic transistors
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US4816893A (en) * 1987-02-24 1989-03-28 Hughes Aircraft Company Low leakage CMOS/insulator substrate devices and method of forming the same
US4753895A (en) * 1987-02-24 1988-06-28 Hughes Aircraft Company Method of forming low leakage CMOS device on insulating substrate
US4797721A (en) * 1987-04-13 1989-01-10 General Electric Company Radiation hardened semiconductor device and method of making the same
JPH0766922B2 (ja) * 1987-07-29 1995-07-19 株式会社村田製作所 半導体装置の製造方法
US4826300A (en) * 1987-07-30 1989-05-02 Hughes Aircraft Company Silicon-on-sapphire liquid crystal light valve and method
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US5453153A (en) * 1987-11-13 1995-09-26 Kopin Corporation Zone-melting recrystallization process
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US5063166A (en) * 1988-04-29 1991-11-05 Sri International Method of forming a low dislocation density semiconductor device
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IT1248789B (it) * 1990-05-02 1995-01-30 Nippon Sheet Glass Co Ltd Metodo per la produzione di una pellicola di semiconduttore policristallino
US5318919A (en) * 1990-07-31 1994-06-07 Sanyo Electric Co., Ltd. Manufacturing method of thin film transistor
JPH0719738B2 (ja) * 1990-09-06 1995-03-06 信越半導体株式会社 接合ウェーハ及びその製造方法
US5198371A (en) * 1990-09-24 1993-03-30 Biota Corp. Method of making silicon material with enhanced surface mobility by hydrogen ion implantation
US5482003A (en) * 1991-04-10 1996-01-09 Martin Marietta Energy Systems, Inc. Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process
US5225031A (en) * 1991-04-10 1993-07-06 Martin Marietta Energy Systems, Inc. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process
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US5973363A (en) * 1993-07-12 1999-10-26 Peregrine Semiconductor Corp. CMOS circuitry with shortened P-channel length on ultrathin silicon on insulator
US5864162A (en) * 1993-07-12 1999-01-26 Peregrine Seimconductor Corporation Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire
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US5572040A (en) * 1993-07-12 1996-11-05 Peregrine Semiconductor Corporation High-frequency wireless communication system on a single ultrathin silicon on sapphire chip
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US10103021B2 (en) * 2012-01-12 2018-10-16 Shin-Etsu Chemical Co., Ltd. Thermally oxidized heterogeneous composite substrate and method for manufacturing same
US9753551B2 (en) 2013-03-15 2017-09-05 Stacey Gottlieb Fingernail system for use with capacitive touchscreens
JP5685615B2 (ja) * 2013-03-25 2015-03-18 東京エレクトロン株式会社 マイクロ波加熱処理方法
RU2641617C1 (ru) * 2016-10-07 2018-01-18 Федеральное государственное бюджетное образовательное учреждение высшего образования "Чеченский государственный университет" Способ изготовления полупроводникового прибора
FR3076292B1 (fr) * 2017-12-28 2020-01-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de transfert d'une couche utile sur un substrat support
FR3086097B1 (fr) * 2018-09-18 2020-12-04 Commissariat Energie Atomique Procede de fabrication d'un dispositif electroluminescent
CN113437021B (zh) * 2021-07-28 2022-06-03 广东省科学院半导体研究所 薄膜材料的异质结的制备方法及其制得的薄膜

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Also Published As

Publication number Publication date
DE3374821D1 (en) 1988-01-14
EP0125260B1 (en) 1987-12-02
IL70018A (en) 1987-02-27
IT1168243B (it) 1987-05-20
WO1984002034A1 (en) 1984-05-24
US4509990A (en) 1985-04-09
EP0125260A1 (en) 1984-11-21

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