IT1248789B - Metodo per la produzione di una pellicola di semiconduttore policristallino - Google Patents

Metodo per la produzione di una pellicola di semiconduttore policristallino

Info

Publication number
IT1248789B
IT1248789B ITMI911181A ITMI911181A IT1248789B IT 1248789 B IT1248789 B IT 1248789B IT MI911181 A ITMI911181 A IT MI911181A IT MI911181 A ITMI911181 A IT MI911181A IT 1248789 B IT1248789 B IT 1248789B
Authority
IT
Italy
Prior art keywords
semiconductor film
polycrystalline semiconductor
amorphous semiconductor
production
film
Prior art date
Application number
ITMI911181A
Other languages
English (en)
Inventor
Keiji Oyoshi
Shuhei Tanaka
Tomonori Yamaoka
Original Assignee
Nippon Sheet Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11657290A external-priority patent/JP2800060B2/ja
Application filed by Nippon Sheet Glass Co Ltd filed Critical Nippon Sheet Glass Co Ltd
Publication of ITMI911181A0 publication Critical patent/ITMI911181A0/it
Publication of ITMI911181A1 publication Critical patent/ITMI911181A1/it
Application granted granted Critical
Publication of IT1248789B publication Critical patent/IT1248789B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Un metodo per la produzione di una pellicola di semiconduttore policristallino di questa invenzione include uno stadio di formazione della pellicola per formare una pellicola di semiconduttore amorfo contenente fasi cristalline su un substrato e uno stadio di crescita dei cristalli mediante impianto ionico nella pellicola di semiconduttore amorfo in modo tale che una gamma proiettata di ioni incidenti diventi più grande dello spessore pellicolare della pellicola di semiconduttore amorfo. Una pellicola di semiconduttore policristallino avente dimensioni grandi e uniformi dei grani non possibili in metodi convenzionali può così venire formata a bassa temperatura.
ITMI911181A 1990-05-02 1991-04-30 Metodo per la produzione di una pellicola di semiconduttore policristallino IT1248789B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11657290A JP2800060B2 (ja) 1989-11-14 1990-05-02 半導体膜の製造方法

Publications (3)

Publication Number Publication Date
ITMI911181A0 ITMI911181A0 (it) 1991-04-30
ITMI911181A1 ITMI911181A1 (it) 1992-10-30
IT1248789B true IT1248789B (it) 1995-01-30

Family

ID=14690434

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI911181A IT1248789B (it) 1990-05-02 1991-04-30 Metodo per la produzione di una pellicola di semiconduttore policristallino

Country Status (4)

Country Link
DE (1) DE4114162A1 (it)
FR (1) FR2661779A1 (it)
GB (1) GB2244284B (it)
IT (1) IT1248789B (it)

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1258259A (it) * 1968-04-05 1971-12-30
US3737343A (en) * 1971-04-19 1973-06-05 Bell Telephone Labor Inc Technique for the preparation of ion implanted tantalum-aluminum alloy
JPS5837913A (ja) * 1981-08-28 1983-03-05 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS5935425A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 半導体装置の製造方法
US4509990A (en) * 1982-11-15 1985-04-09 Hughes Aircraft Company Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates
GB2137806B (en) * 1983-04-05 1986-10-08 Standard Telephones Cables Ltd Ion implantation in semiconductor bodies
JPS6037721A (ja) * 1983-08-10 1985-02-27 Seiko Epson Corp 量子アニ−ル法
JPS60143624A (ja) * 1983-12-29 1985-07-29 Fujitsu Ltd 半導体装置の製造方法
JPS60164316A (ja) * 1984-02-06 1985-08-27 Sony Corp 半導体薄膜の形成方法
JPH0722121B2 (ja) * 1984-09-25 1995-03-08 ソニー株式会社 半導体の製造方法
JPS61174621A (ja) * 1985-01-28 1986-08-06 Nippon Telegr & Teleph Corp <Ntt> 半導体薄膜結晶の製造方法
US4816421A (en) * 1986-11-24 1989-03-28 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making a heteroepitaxial structure by mesotaxy induced by buried implantation
KR900005038B1 (ko) * 1987-07-31 1990-07-18 삼성전자 주식회사 고저항 다결정 실리콘의 제조방법
JP2746606B2 (ja) * 1987-09-18 1998-05-06 ゼロックス コーポレーション 大粒子多結晶質膜の製造方法
JPH01220822A (ja) * 1988-02-29 1989-09-04 Mitsubishi Electric Corp 化合物半導体装置の製造方法
DE69031880T2 (de) * 1989-03-31 1998-05-20 Canon Kk Verfahren zur Herstellung eines halbleitenden kristallinen Filmes

Also Published As

Publication number Publication date
ITMI911181A1 (it) 1992-10-30
DE4114162A1 (de) 1991-11-07
GB2244284B (en) 1993-11-03
FR2661779A1 (fr) 1991-11-08
GB2244284A (en) 1991-11-27
ITMI911181A0 (it) 1991-04-30
GB9109508D0 (en) 1991-06-26

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