GB2244284B - A method of manufacturing a polycrystalline semiconductor film - Google Patents

A method of manufacturing a polycrystalline semiconductor film

Info

Publication number
GB2244284B
GB2244284B GB9109508A GB9109508A GB2244284B GB 2244284 B GB2244284 B GB 2244284B GB 9109508 A GB9109508 A GB 9109508A GB 9109508 A GB9109508 A GB 9109508A GB 2244284 B GB2244284 B GB 2244284B
Authority
GB
United Kingdom
Prior art keywords
manufacturing
semiconductor film
polycrystalline semiconductor
polycrystalline
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9109508A
Other versions
GB2244284A (en
GB9109508D0 (en
Inventor
Keiji Oyoshi
Shuhei Tanaka
Tomonori Yamaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Sheet Glass Co Ltd
Original Assignee
Nippon Sheet Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11657290A external-priority patent/JP2800060B2/en
Application filed by Nippon Sheet Glass Co Ltd filed Critical Nippon Sheet Glass Co Ltd
Publication of GB9109508D0 publication Critical patent/GB9109508D0/en
Publication of GB2244284A publication Critical patent/GB2244284A/en
Application granted granted Critical
Publication of GB2244284B publication Critical patent/GB2244284B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
GB9109508A 1990-05-02 1991-05-02 A method of manufacturing a polycrystalline semiconductor film Expired - Fee Related GB2244284B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11657290A JP2800060B2 (en) 1989-11-14 1990-05-02 Method for manufacturing semiconductor film

Publications (3)

Publication Number Publication Date
GB9109508D0 GB9109508D0 (en) 1991-06-26
GB2244284A GB2244284A (en) 1991-11-27
GB2244284B true GB2244284B (en) 1993-11-03

Family

ID=14690434

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9109508A Expired - Fee Related GB2244284B (en) 1990-05-02 1991-05-02 A method of manufacturing a polycrystalline semiconductor film

Country Status (4)

Country Link
DE (1) DE4114162A1 (en)
FR (1) FR2661779A1 (en)
GB (1) GB2244284B (en)
IT (1) IT1248789B (en)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1258259A (en) * 1968-04-05 1971-12-30
GB1349046A (en) * 1971-04-19 1974-03-27 Western Electric Co Method of producing a stable tantalum-aluminum thin film
EP0103767A2 (en) * 1982-08-23 1984-03-28 Kabushiki Kaisha Toshiba Method of producing a semiconductor device by ion-implantation and device produced by the method
GB2137806A (en) * 1983-04-05 1984-10-10 Standard Telephones Cables Ltd Ion implantation in semiconductor bodies
US4509990A (en) * 1982-11-15 1985-04-09 Hughes Aircraft Company Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates
JPS61174621A (en) * 1985-01-28 1986-08-06 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor thin crystal
EP0271232A1 (en) * 1986-11-24 1988-06-15 AT&T Corp. Method of making an article comprising a heteroepitaxial structure
GB2207809A (en) * 1987-07-31 1989-02-08 Samsung Semiconductor Tele Method of manufacturing high resistance polycrystalline silicon
EP0308166A2 (en) * 1987-09-18 1989-03-22 Xerox Corporation Polycrystalline film formation
GB2215516A (en) * 1988-02-29 1989-09-20 Mitsubishi Electric Corp A method of producing a compound semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837913A (en) * 1981-08-28 1983-03-05 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6037721A (en) * 1983-08-10 1985-02-27 Seiko Epson Corp Quantum annealing method
JPS60143624A (en) * 1983-12-29 1985-07-29 Fujitsu Ltd Manufacture of semiconductor device
JPS60164316A (en) * 1984-02-06 1985-08-27 Sony Corp Formation of semiconductor thin film
JPH0722121B2 (en) * 1984-09-25 1995-03-08 ソニー株式会社 Semiconductor manufacturing method
DE69031880T2 (en) * 1989-03-31 1998-05-20 Canon Kk Process for the production of a semiconducting crystalline film

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1258259A (en) * 1968-04-05 1971-12-30
GB1349046A (en) * 1971-04-19 1974-03-27 Western Electric Co Method of producing a stable tantalum-aluminum thin film
EP0103767A2 (en) * 1982-08-23 1984-03-28 Kabushiki Kaisha Toshiba Method of producing a semiconductor device by ion-implantation and device produced by the method
US4509990A (en) * 1982-11-15 1985-04-09 Hughes Aircraft Company Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates
GB2137806A (en) * 1983-04-05 1984-10-10 Standard Telephones Cables Ltd Ion implantation in semiconductor bodies
JPS61174621A (en) * 1985-01-28 1986-08-06 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor thin crystal
EP0271232A1 (en) * 1986-11-24 1988-06-15 AT&T Corp. Method of making an article comprising a heteroepitaxial structure
GB2207809A (en) * 1987-07-31 1989-02-08 Samsung Semiconductor Tele Method of manufacturing high resistance polycrystalline silicon
EP0308166A2 (en) * 1987-09-18 1989-03-22 Xerox Corporation Polycrystalline film formation
GB2215516A (en) * 1988-02-29 1989-09-20 Mitsubishi Electric Corp A method of producing a compound semiconductor device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Patent Abstracts of Japan, vol 10, no.384, (E-466) (2441) & JP 61174621 A *

Also Published As

Publication number Publication date
IT1248789B (en) 1995-01-30
ITMI911181A1 (en) 1992-10-30
ITMI911181A0 (en) 1991-04-30
FR2661779A1 (en) 1991-11-08
GB2244284A (en) 1991-11-27
DE4114162A1 (en) 1991-11-07
GB9109508D0 (en) 1991-06-26

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19950502