JPS6037721A - Quantum annealing method - Google Patents

Quantum annealing method

Info

Publication number
JPS6037721A
JPS6037721A JP58147027A JP14702783A JPS6037721A JP S6037721 A JPS6037721 A JP S6037721A JP 58147027 A JP58147027 A JP 58147027A JP 14702783 A JP14702783 A JP 14702783A JP S6037721 A JPS6037721 A JP S6037721A
Authority
JP
Japan
Prior art keywords
film
annealing
quantum
polycrystalline
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58147027A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
誠一 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP58147027A priority Critical patent/JPS6037721A/en
Publication of JPS6037721A publication Critical patent/JPS6037721A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain a polycrystalline Si film of homogeneous particles or pattern like by quantum-annealing an amorphous Si film or a polycrystalline Si film which contains particles of different diameters on a quartz substrate and irradiating fractionalized or patterned quantum rays to polycrystallize the Si film. CONSTITUTION:On a quartz substrate 1, an amorphous Si film 2 or an Si film 2 which contains particles of different diameters is deposited and the film 2 is made a polycrystalline film by quantum anneal treatment such as laser annealing, lamp annealing, electron beam annealing or ion beam annealing. In this case, the quantum rays are projected on the film 2 in a state of fractionalization or pattern like and the polycrystalline Si film 2 of desired homogeneous particles or pattern like is obtained.

Description

【発明の詳細な説明】 本発明は量子アニール法に係り、とりわけＳ１膜の量子
アニールによる多結晶化法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a quantum annealing method, and more particularly to a method for polycrystallizing an S1 film by quantum annealing.

従来、量子アニール法は、Ｓｉ膜の単結晶化に用いられ
ているのが通例であった。Conventionally, the quantum annealing method has generally been used for single crystallization of Si films.

しかし、上記従来技術によると、必ずしも単結晶Ｓ１膜
を要しない多結晶Ｓ１膜による薄膜トランジスタの製造
には適さないという欠点があった本発明は、かかる従来
技術による欠点をなくし、かつ、均一な粒形あるいは図
形状の多結晶８１膜の形成法を提供することを目的とす
る。However, the above-mentioned prior art has the drawback that it is not suitable for manufacturing thin film transistors using polycrystalline S1 films that do not necessarily require single-crystal S1 films. It is an object of the present invention to provide a method for forming a polycrystalline 81 film having a shape or figure.

上記目的を達成するための本発明の基本的な構成は量子
アニール法に関し、レーザー・アニールあるいはランプ
・アニール、電子ビーム・アニール、イオン・ビーム帝
アニール等の量子アニール処理に於て、量子線を細分化
あるいは図形状等にして試料表面に照射することにより
、試料あるいは試料表面を細分化された多結晶体と化す
ことを特徴とすること、及び前記試料を８１膜となすこ
とを特徴とする。The basic structure of the present invention to achieve the above object relates to a quantum annealing method, in which quantum beams are The method is characterized in that the sample or the sample surface is made into a subdivided polycrystal by irradiating the sample surface with the sample being subdivided or into a graphic shape, and the sample is formed into an 81 film. .

以下、実施例により本発明を詳述する。Hereinafter, the present invention will be explained in detail with reference to Examples.

第１図と第２図は本発明による薄膜Ｓ１のレーザー・ア
ニール処理法を示す工程毎の模式図であり、石英基板１
の表面に形成されたアモルファス８１膜又は粒径の不整
いの多結晶Ｓ１膜に、定型のレーザービーム３をステッ
プ状に照射するか、あるいは、ホログラフィクに細分化
されたレーザー光を照射して、一定の粒径のＳｉ膜５と
なずことを示したものである。第３図及び第４図は上記
方法で形成した多結晶Ｓ１膜の粒界の形状を平面図とし
て示したもので、第３図は格子状、第４図は変形状に一
定の粒径で８１膜を多結晶化した状態を示し内部の線４
，５は結晶粒界を示す。本発明では照射ビームはレーザ
ー光のみならず電子ビーム、イオン・ビームによるアニ
ール処理にも適用できる。1 and 2 are schematic diagrams showing each step of the laser annealing method for thin film S1 according to the present invention, in which a quartz substrate 1
The amorphous 81 film or the polycrystalline S1 film with irregular grain size formed on the surface of the film is irradiated with a regular laser beam 3 in a stepwise manner, or with a holographically segmented laser beam. , which shows that the Si film 5 has a constant grain size. Figures 3 and 4 are plan views showing the shape of the grain boundaries of the polycrystalline S1 film formed by the above method. Internal line 4 shows the polycrystalline state of the 81 film.
, 5 indicate grain boundaries. In the present invention, the irradiation beam can be applied not only to a laser beam but also to an annealing treatment using an electron beam or an ion beam.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図及び第２図は本発明の一実施例を示すアニール処
理工程毎の断面模式図、第６図及び第４図は本発明によ
る多結晶膜形成の結晶粒形成表面状態を示す平面図であ
る。 １・・・・・・石英基板 ２・・・・・・Ｓ１膜 ３・・・・・・多結晶化Ｂ１膜 ４．５・・・・・・結晶粒界 以　上 出願人　株式会社諏訪精工舎 代理人　弁理士最最上　務FIGS. 1 and 2 are schematic cross-sectional views of each annealing process showing an embodiment of the present invention, and FIGS. 6 and 4 are plan views showing surface conditions of crystal grain formation in polycrystalline film formation according to the present invention. It is. 1... Quartz substrate 2... S1 film 3... Polycrystalline B1 film 4.5... Grain boundary or above Applicant Suwa Seiko Co., Ltd. Agent Mogami, Patent Attorney

Claims (1)

【特許請求の範囲】 １、　レーザーアニールあるいはランプ拳アニール、電
子ビーム・アニール、イオンビーム・アニール等の量子
アニール処理に於て、量子線を細分化あるいは図形状等
にして試料表面に照射することにより、試料あるいは試
料表面を細分化された多結晶体と化すことを特徴とする
量子アニール法。 ２、　試料を８１膜となすことを特徴とする特許請求の
範囲第１項記載の量子アニール法。[Claims] 1. In quantum annealing treatments such as laser annealing, lamp fist annealing, electron beam annealing, ion beam annealing, etc., quantum beams are irradiated onto the surface of a sample in the form of fine particles or shapes, etc. A quantum annealing method characterized by converting the sample or sample surface into finely divided polycrystals. 2. The quantum annealing method according to claim 1, wherein the sample is an 81 film.
JP58147027A 1983-08-10 1983-08-10 Quantum annealing method Pending JPS6037721A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58147027A JPS6037721A (en) 1983-08-10 1983-08-10 Quantum annealing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58147027A JPS6037721A (en) 1983-08-10 1983-08-10 Quantum annealing method

Publications (1)

Publication Number Publication Date
JPS6037721A true JPS6037721A (en) 1985-02-27

Family

ID=15420881

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58147027A Pending JPS6037721A (en) 1983-08-10 1983-08-10 Quantum annealing method

Country Status (1)

Country Link
JP (1) JPS6037721A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2661779A1 (en) * 1990-05-02 1991-11-08 Nippon Sheet Glass Co Ltd PROCESS FOR PRODUCING A POLYCRYSTALLINE SEMICONDUCTOR FILM.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2661779A1 (en) * 1990-05-02 1991-11-08 Nippon Sheet Glass Co Ltd PROCESS FOR PRODUCING A POLYCRYSTALLINE SEMICONDUCTOR FILM.

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