JPH01107514A - Semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a semiconductor device which eliminates cracks and has high reliability by forming the specific region of a semiconductor polycrystal in a substantially rectangular shape in which its four vertexes are rounded in radius of curvature of 1/4-1/2 of the short side of the region in a step of single crystallizing the region by irradiating the region with a laser. CONSTITUTION:A semiconductor polycrystalline layer is provided on an insulating substrate, and, in a step of single crystallizing a specific region of a semiconductor polycrystal by irradiating the region with a laser, a semiconductor crystalline region O of the single-crystallized specific region is rounded at the four vertexes in a substantially rectangular shape in radius of curvature of 1/3 of the short side W of the region O. Thus, stresses concentrated at the four vertexes are dispersed, thereby becoming smaller than the stress corresponding to the elastic limit of an insulator 2 thereby to prevent it from cracking.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention provides a semiconductor polycrystalline layer on an insulating substrate, and irradiates a laser beam to a specific region of the semiconductor polycrystal to make the specific region into a single crystal. The present invention relates to semiconductor devices.

Conventional technology Figure 2 shows a structural diagram of this conventional semiconductor device, and 1.3, 5, 7, 9, 11.13° and 15.17 are laser irradiation to the semiconductor polycrystalline region. This is a semiconductor crystal region that has been made into a single crystal. 18 is adjacent to the semiconductor crystal region 1, 3, 5° 7.9, 11.13, 15.17, and the semiconductor crystal region 1.3, 5, 7, 9, 1
1.

An insulator formed around 13, 15, and 17 separates the supplementary semiconductor crystal regions. 2o is one of the vertices of the semiconductor crystal region 17. 22 is one of the vertices of the semiconductor crystal region 9. 24 is one of the vertices of the semiconductor crystal region 1.

26 is a crack generated from the apex 20 of the semiconductor crystal region 1-7. 28 is a crack generated from the apex 22 of the semiconductor crystal region 9.

3o is a crack generated from the apex 24 of the semiconductor crystal region 1.

Problems to be Solved by the Invention However, in the above-described configuration, it is necessary to irradiate the semiconductor polycrystalline region with a laser beam, thereby converting the semiconductor polycrystalline region into a single crystal.

3.5, 7, 9, 11.13, 15.17, the semiconductor crystal regions 1,3°5.7,9,
11.13,15;17 are rectangular, so
The semiconductor crystal region 1.3°6.7,9,11.13,
a coefficient of thermal expansion of 16.17, and the semiconductor crystal region 1.3,
5, 7, 9 degrees 11.13, 15.17 due to the difference in thermal expansion coefficient of the insulator 18 adjacent to the periphery of the semiconductor crystal regions 1.3, 5, 7, 9, 11. 13°15
．． The stress acting on the insulator 18 from the semiconductor crystal region 1.3, 5, 7, 9, 11.

13.15.17, for example, the stress concentrated at the vertices 20.22.24 of the semiconductor crystal region 1, 9.17 becomes larger than the stress corresponding to the elastic limit of the insulator 18. By this, the apex 20. of the semiconductor crystal.
From 22.24 - There was a problem in that cracks 26.28.30 occurred.

In order to solve the above problems, the present invention provides a semiconductor polycrystalline layer on an insulating substrate, and irradiates a laser to a specific region of the semiconductor polycrystal, thereby converting the specific region into a single crystal. In the process, a highly reliable semiconductor device is achieved by forming the specific region into a substantially rectangular shape whose four vertices are rounded with a radius of curvature equal to the radius of the short side of the specific region. The purpose is to provide

Means for Solving the Problems In order to solve the above-mentioned problems, the present invention provides a semiconductor polycrystalline layer on an insulating substrate, and irradiates a laser beam to a specific region of the semiconductor polycrystal. In the step of single crystallization, the specific region is approximately rectangular, and the four vertices of the specific region are rounded by a radius of a rod from % of the short side of the specific region. It is a device.

According to the above-described configuration, the present invention provides a semiconductor polycrystalline layer on an insulating substrate, and in the step of irradiating a laser beam to a specific region of the semiconductor polycrystalline material, the specific region is made into a single crystal. When the region is approximately rectangular and its four vertices are rounded with the radius of the rod from the short side of the specific region, the stress concentrated at the four vertices of the specific region is dispersed, This is less than the stress corresponding to the elastic limit of the surrounding insulating material and prevents cracks from forming.

Embodiment FIG. 1 shows a structural diagram of a semiconductor device in an embodiment of the present invention. In FIG. 1, 0 is a semiconductor crystal region having a roughly rectangular shape whose four vertices are rounded with a radius of curvature R equal to the radius of the short side W, and 2 is adjacent to the periphery of the semiconductor crystal region 0. L is the long side of the semiconductor crystal.

As described above, according to this embodiment, in the step of providing a semiconductor polycrystalline layer on an insulating substrate and irradiating a laser beam to a specific region of the semiconductor polycrystal, the specific region is made into a single crystal. The semiconductor crystal region 0, which is the crystallized specific region, is roughly rectangular, and its four vertices are rounded with a radius of curvature from the short side W of the semiconductor crystal region 0. The stress concentrated on the insulator 2 is dispersed, and the stress corresponding to the elastic limit of the insulator 2 is also reduced, making it possible to prevent cracks.

Further, in the first embodiment, the radius of curvature R of the short side W of the semiconductor crystal region 0 at the four vertices of the semiconductor crystal region O is
There are two methods for cutting corners: One is to attach the lower semiconductor polycrystalline layer to the surface of the semiconductor polycrystalline layer except for a region in which the four vertices are square-shaped with a radius of curvature of the short side W of the semiconductor crystal region 0. The semiconductor polycrystalline layer is formed by depositing a laser-resistant masking layer capable of blocking the laser beam irradiated on the semiconductor polycrystalline layer, and then irradiating the semiconductor polycrystalline layer with a laser beam to single-crystallize the non-masked (exposed) portion of the surface of the semiconductor polycrystalline layer. There is a method to form region 0. The other method is to irradiate a laser only on a semiconductor polycrystalline region, which is roughly rectangular and whose four vertices are rounded with a radius of curvature equal to the short side W of the region, to form a single crystal. This is a method for forming the semiconductor crystal region 0.

In the first embodiment, the radius R of curvature was set to almost the short side W of the semiconductor crystal region, but the radius R of curvature can be set to any value from the value around μ of the short side W to the maximum value. It is true.

DETAILED DESCRIPTION OF THE INVENTION According to the present invention, a semiconductor polycrystalline layer is provided on an insulating substrate, and a specific region of the semiconductor polycrystal is irradiated with a laser to make the specific region into a single crystal. Since the specific area is approximately rectangular and its four vertices are rounded with a curvature of the radius of the short side of the specific area, cracks will occur from the vertices. This can be prevented and has great practical effects.

[Brief explanation of the drawing]

FIG. 1 is a structural diagram of a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a structural diagram of a conventional semiconductor device. 0...Semiconductor crystal area%1, 3, 5, 7, 9°1
1.13,15,17゛...semiconductor crystal region, 2
゜18... Insulator, 20.22.24...
・Vertex of semiconductor crystal region 1, 9.17, 26.28.3
0...Crack crack, R...Radius of curvature, L.
... Long side of semiconductor crystal region, W ... Short side of semiconductor crystal region. Name of agent: Patent attorney Toshio Nakao and one other person o-
--Semiconductor and tilted block 2- Insulator Figure 1/, 3. S, 7.9. II, /, 3. Is
, /7--One-half 11-1 (non-effect 5-11 (area ta--・Insulator 20.2424-Cow IjI Integral crystal area ° top 26,
2#, 3θ-Crack No. 2511

Claims (2)

[Claims] (1) In the step of providing a semiconductor polycrystalline layer on an insulating substrate and turning the specific region into a single crystal by irradiating the specific region of the semiconductor polycrystal with a laser, the specific region is approximately rectangular and The four vertices are 1/1 of the short side of the specific area.
1. A semiconductor device characterized in that the semiconductor device has a rounded shape with a radius of curvature smaller than 2 and a positive value. (2) The four vertices of a specific region of a roughly rectangular semiconductor polycrystal are rounded with a radius of curvature from 1/2 to 1/4 of the short side of the specific region. A semiconductor device according to claim 1.