GB1258259A - - Google Patents

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Publication number
GB1258259A
GB1258259A GB1258259DA GB1258259A GB 1258259 A GB1258259 A GB 1258259A GB 1258259D A GB1258259D A GB 1258259DA GB 1258259 A GB1258259 A GB 1258259A
Authority
GB
United Kingdom
Prior art keywords
film
ions
produce
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1258259A publication Critical patent/GB1258259A/en
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3215—Doping the layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors

Abstract

1,258,259. Resistors; capacitors; circuit assemblies. UNITED KINGDOM ATOMIC ENERGY AUTHORITY. 27 March, 1969 [5 April, 1968], No. 16638/68. Headings H1M, H1R and H1S. [Also in Divisions Cl and C7] A thin metal or silicon film is bombarded with ions to increase its resistivity. The ions produce a compound with the metal either directly or by sputtering back atoms from the substrate. In the former case the ions may be O<SP>+</SP>, N<SP>+</SP>, P<SP>+</SP> (forming oxides, nitrides or phosphides with the film); in the latter case ions of an inert element (e.g. Ar<SP>+</SP>) may be used. The film may be of Al, Ta, Sn, Cu, Ti or Si on an insulating (e.g. glass) substrate or may be the surface layer of a metallic body. To produce a film of a required resistivity, it is necessary (in order to avoid saturating the film) either to measure its resistance during bombardment or to use doses calibrated for particular films of particular thicknesses. If the range of the ion beam is of the order of the thickness of the film, the resistive compound is formed throughout the film. If the range is considerably less than the film thickness, only the upper layer of the film is affected. This may be dosed to a high resistance and a further layer of film then applied over it to produce a capacitor or (by making a connection to the resistive layer) a RC network. If the range is greater than the film thickness, there is no substantial interaction with the film, but the ions enter the substrate and sputter atoms out of it into the film to form a compound with the film. This method may be used to produce a transparent, conductive Al layer on glass.
GB1258259D 1968-04-05 1968-04-05 Expired GB1258259A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1663868 1968-04-05

Publications (1)

Publication Number Publication Date
GB1258259A true GB1258259A (en) 1971-12-30

Family

ID=10080923

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1258259D Expired GB1258259A (en) 1968-04-05 1968-04-05

Country Status (1)

Country Link
GB (1) GB1258259A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4333808A (en) * 1979-10-30 1982-06-08 International Business Machines Corporation Method for manufacture of ultra-thin film capacitor
US4351695A (en) * 1980-01-30 1982-09-28 Siemens Aktiengesellschaft Method of producing low-resistant, monocrystalline metallic layers by implanting ions into a polycrystalline metal layer and heating to produce a monocrystalline layer
US4364969A (en) * 1979-12-13 1982-12-21 United Kingdom Atomic Energy Authority Method of coating titanium and its alloys
GB2175316A (en) * 1985-05-17 1986-11-26 Atomic Energy Authority Uk Improved cutting edges
GB2244284A (en) * 1990-05-02 1991-11-27 Nippon Sheet Glass Co Ltd A method of manufacturing a polycrystalline semiconductor film by ion implantation

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4333808A (en) * 1979-10-30 1982-06-08 International Business Machines Corporation Method for manufacture of ultra-thin film capacitor
US4364969A (en) * 1979-12-13 1982-12-21 United Kingdom Atomic Energy Authority Method of coating titanium and its alloys
US4351695A (en) * 1980-01-30 1982-09-28 Siemens Aktiengesellschaft Method of producing low-resistant, monocrystalline metallic layers by implanting ions into a polycrystalline metal layer and heating to produce a monocrystalline layer
GB2175316A (en) * 1985-05-17 1986-11-26 Atomic Energy Authority Uk Improved cutting edges
GB2175316B (en) * 1985-05-17 1989-04-26 Atomic Energy Authority Uk Improved cutting edges
GB2244284A (en) * 1990-05-02 1991-11-27 Nippon Sheet Glass Co Ltd A method of manufacturing a polycrystalline semiconductor film by ion implantation
GB2244284B (en) * 1990-05-02 1993-11-03 Nippon Sheet Glass Co Ltd A method of manufacturing a polycrystalline semiconductor film

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee