DK140036C - SEMICONDUCTOR ELEMENT - Google Patents

SEMICONDUCTOR ELEMENT

Info

Publication number
DK140036C
DK140036C DK701973A DK701973A DK140036C DK 140036 C DK140036 C DK 140036C DK 701973 A DK701973 A DK 701973A DK 701973 A DK701973 A DK 701973A DK 140036 C DK140036 C DK 140036C
Authority
DK
Denmark
Prior art keywords
semiconductor element
semiconductor
Prior art date
Application number
DK701973A
Other languages
Danish (da)
Other versions
DK140036B (en
Inventor
H Yagi
T Tsuyuki
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DK140036B publication Critical patent/DK140036B/en
Application granted granted Critical
Publication of DK140036C publication Critical patent/DK140036C/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
DK701973A 1972-12-29 1973-12-21 SEMICONDUCTOR ELEMENT DK140036C (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48000550A JPS5147583B2 (en) 1972-12-29 1972-12-29

Publications (2)

Publication Number Publication Date
DK140036B DK140036B (en) 1979-06-05
DK140036C true DK140036C (en) 1979-12-24

Family

ID=11476818

Family Applications (1)

Application Number Title Priority Date Filing Date
DK701973A DK140036C (en) 1972-12-29 1973-12-21 SEMICONDUCTOR ELEMENT

Country Status (15)

Country Link
JP (1) JPS5147583B2 (en)
AT (1) AT376844B (en)
BE (1) BE809216A (en)
BR (1) BR7310275D0 (en)
CA (1) CA993568A (en)
CH (1) CH577750A5 (en)
DE (1) DE2364752A1 (en)
DK (1) DK140036C (en)
ES (1) ES421881A1 (en)
FR (1) FR2212645B1 (en)
GB (1) GB1460037A (en)
IT (1) IT1002384B (en)
NL (1) NL7317815A (en)
NO (1) NO140844C (en)
SE (1) SE398940B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT377645B (en) * 1972-12-29 1985-04-10 Sony Corp SEMICONDUCTOR COMPONENT
JPS5914897B2 (en) * 1975-02-08 1984-04-06 ソニー株式会社 semiconductor equipment
JPS5754969B2 (en) * 1974-04-04 1982-11-20
JPS5753672B2 (en) * 1974-04-10 1982-11-13
JPS57658B2 (en) * 1974-04-16 1982-01-07
JPS5714064B2 (en) * 1974-04-25 1982-03-20
JPS5648983B2 (en) * 1974-05-10 1981-11-19
JPS5718710B2 (en) * 1974-05-10 1982-04-17
JPS5426789Y2 (en) * 1974-07-23 1979-09-03
IT1061510B (en) * 1975-06-30 1983-04-30 Rca Corp BIPOLAR TRANSISTOR PRESENTING AN EMITTER WITH A HIGH LOW CONCENTRATION OF IMPURITIES AND ITS MANUFACTURING METHOD
JPS52100978A (en) * 1976-02-20 1977-08-24 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS5565460A (en) * 1978-11-09 1980-05-16 Ibm Method of manufacturing semiconductor device improved in current gain
JPS5946103B2 (en) * 1980-03-10 1984-11-10 日本電信電話株式会社 transistor

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL103476C (en) * 1955-04-21
US3343048A (en) * 1964-02-20 1967-09-19 Westinghouse Electric Corp Four layer semiconductor switching devices having a shorted emitter and method of making the same
DE1221363B (en) * 1964-04-25 1966-07-21 Telefunken Patent Method for reducing the sheet resistance of semiconductor components
DE1297237B (en) * 1964-09-18 1969-06-12 Itt Ind Gmbh Deutsche Surface transistor and process for its manufacture
US3500141A (en) * 1964-10-13 1970-03-10 Ibm Transistor structure
GB1160429A (en) * 1965-10-14 1969-08-06 Philco Ford Corp Improvements in and relating to Semiconductive Devices.
US3469117A (en) * 1966-01-08 1969-09-23 Nippon Telegraph & Telephone Electric circuit employing semiconductor devices
US3432920A (en) * 1966-12-01 1969-03-18 Rca Corp Semiconductor devices and methods of making them
US3512056A (en) * 1967-04-25 1970-05-12 Westinghouse Electric Corp Double epitaxial layer high power,high speed transistor
FR1574577A (en) * 1967-08-03 1969-07-11
US3504242A (en) * 1967-08-11 1970-03-31 Westinghouse Electric Corp Switching power transistor with thyristor overload capacity
US3538401A (en) * 1968-04-11 1970-11-03 Westinghouse Electric Corp Drift field thyristor
US3544863A (en) * 1968-10-29 1970-12-01 Motorola Inc Monolithic integrated circuit substructure with epitaxial decoupling capacitance
US3591430A (en) * 1968-11-14 1971-07-06 Philco Ford Corp Method for fabricating bipolar planar transistor having reduced minority carrier fringing
JPS4840667B1 (en) * 1969-03-28 1973-12-01
US3717515A (en) * 1969-11-10 1973-02-20 Ibm Process for fabricating a pedestal transistor
DE2060854A1 (en) * 1970-12-10 1972-08-17 Siemens Ag Semiconductor component with three zones of alternating conductivity type and arrangement for its control
DE2211384A1 (en) * 1971-03-20 1972-11-30 Philips Nv Circuit arrangement with at least one radiation-fed circuit element and semiconductor arrangement for use in such a circuit arrangement
JPS493583A (en) * 1972-04-20 1974-01-12

Also Published As

Publication number Publication date
BE809216A (en) 1974-04-16
ATA1083973A (en) 1984-05-15
GB1460037A (en) 1976-12-31
DE2364752A1 (en) 1974-08-01
NL7317815A (en) 1974-07-02
DK140036B (en) 1979-06-05
NO140844B (en) 1979-08-13
CH577750A5 (en) 1976-07-15
BR7310275D0 (en) 1974-09-24
AT376844B (en) 1985-01-10
JPS5147583B2 (en) 1976-12-15
FR2212645A1 (en) 1974-07-26
IT1002384B (en) 1976-05-20
NO140844C (en) 1979-11-21
JPS4991191A (en) 1974-08-30
AU6378973A (en) 1975-06-19
CA993568A (en) 1976-07-20
ES421881A1 (en) 1976-08-01
SE398940B (en) 1978-01-23
FR2212645B1 (en) 1977-08-05

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