ES391099A1 - Dispositivo semiconductor constitutivo de un diodo electro-luminiscente. - Google Patents
Dispositivo semiconductor constitutivo de un diodo electro-luminiscente.Info
- Publication number
- ES391099A1 ES391099A1 ES391099A ES391099A ES391099A1 ES 391099 A1 ES391099 A1 ES 391099A1 ES 391099 A ES391099 A ES 391099A ES 391099 A ES391099 A ES 391099A ES 391099 A1 ES391099 A1 ES 391099A1
- Authority
- ES
- Spain
- Prior art keywords
- heterojunction
- separation layer
- layer
- region
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000000926 separation method Methods 0.000 abstract 3
- 239000000969 carrier Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US3370570A | 1970-05-01 | 1970-05-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES391099A1 true ES391099A1 (es) | 1974-11-16 |
Family
ID=21871982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES391099A Expired ES391099A1 (es) | 1970-05-01 | 1971-04-29 | Dispositivo semiconductor constitutivo de un diodo electro-luminiscente. |
Country Status (6)
| Country | Link |
|---|---|
| JP (2) | JPS541153B1 (es) |
| KR (1) | KR780000083B1 (es) |
| CA (1) | CA977448A (es) |
| ES (1) | ES391099A1 (es) |
| IE (1) | IE35169B1 (es) |
| SE (1) | SE374467B (es) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH084151B2 (ja) * | 1988-03-04 | 1996-01-17 | 三菱化学株式会社 | エピタキシャル・ウエハ |
-
1971
- 1971-04-23 SE SE7105309A patent/SE374467B/xx unknown
- 1971-04-26 IE IE519/71A patent/IE35169B1/xx unknown
- 1971-04-27 JP JP2731971A patent/JPS541153B1/ja active Pending
- 1971-04-29 ES ES391099A patent/ES391099A1/es not_active Expired
- 1971-04-30 KR KR7100611A patent/KR780000083B1/ko active
-
1975
- 1975-01-24 CA CA 218617 patent/CA977448A/en not_active Expired
-
1978
- 1978-06-29 JP JP7923978A patent/JPS5456387A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| SE374467B (es) | 1975-03-03 |
| KR780000083B1 (en) | 1978-03-30 |
| CA977448A (en) | 1975-11-04 |
| IE35169L (en) | 1971-11-01 |
| JPS5544471B2 (es) | 1980-11-12 |
| JPS5456387A (en) | 1979-05-07 |
| IE35169B1 (en) | 1975-11-26 |
| JPS541153B1 (es) | 1979-01-20 |
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