KR780000083B1 - Light emitting hetero structure diode - Google Patents

Light emitting hetero structure diode

Info

Publication number
KR780000083B1
KR780000083B1 KR7100611A KR710000611A KR780000083B1 KR 780000083 B1 KR780000083 B1 KR 780000083B1 KR 7100611 A KR7100611 A KR 7100611A KR 710000611 A KR710000611 A KR 710000611A KR 780000083 B1 KR780000083 B1 KR 780000083B1
Authority
KR
South Korea
Prior art keywords
light emitting
hetero structure
structure diode
diode
hetero
Prior art date
Application number
KR7100611A
Other languages
Korean (ko)
Inventor
Hayshi Izuo
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Application granted granted Critical
Publication of KR780000083B1 publication Critical patent/KR780000083B1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32316Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
KR7100611A 1970-05-01 1971-04-30 Light emitting hetero structure diode KR780000083B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3370570A 1970-05-01 1970-05-01

Publications (1)

Publication Number Publication Date
KR780000083B1 true KR780000083B1 (en) 1978-03-30

Family

ID=21871982

Family Applications (1)

Application Number Title Priority Date Filing Date
KR7100611A KR780000083B1 (en) 1970-05-01 1971-04-30 Light emitting hetero structure diode

Country Status (6)

Country Link
JP (2) JPS541153B1 (en)
KR (1) KR780000083B1 (en)
CA (1) CA977448A (en)
ES (1) ES391099A1 (en)
IE (1) IE35169B1 (en)
SE (1) SE374467B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH084151B2 (en) * 1988-03-04 1996-01-17 三菱化学株式会社 Epitaxial wafer

Also Published As

Publication number Publication date
JPS5544471B2 (en) 1980-11-12
SE374467B (en) 1975-03-03
JPS5456387A (en) 1979-05-07
CA977448A (en) 1975-11-04
IE35169B1 (en) 1975-11-26
JPS541153B1 (en) 1979-01-20
ES391099A1 (en) 1974-11-16
IE35169L (en) 1971-11-01

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