CA977448A - Light emitting heterostructure diode - Google Patents
Light emitting heterostructure diodeInfo
- Publication number
- CA977448A CA977448A CA 218617 CA218617A CA977448A CA 977448 A CA977448 A CA 977448A CA 218617 CA218617 CA 218617 CA 218617 A CA218617 A CA 218617A CA 977448 A CA977448 A CA 977448A
- Authority
- CA
- Canada
- Prior art keywords
- light emitting
- emitting heterostructure
- heterostructure diode
- diode
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US3370570A | 1970-05-01 | 1970-05-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA977448A true CA977448A (en) | 1975-11-04 |
Family
ID=21871982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA 218617 Expired CA977448A (en) | 1970-05-01 | 1975-01-24 | Light emitting heterostructure diode |
Country Status (6)
Country | Link |
---|---|
JP (2) | JPS541153B1 (en) |
KR (1) | KR780000083B1 (en) |
CA (1) | CA977448A (en) |
ES (1) | ES391099A1 (en) |
IE (1) | IE35169B1 (en) |
SE (1) | SE374467B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH084151B2 (en) * | 1988-03-04 | 1996-01-17 | 三菱化学株式会社 | Epitaxial wafer |
-
1971
- 1971-04-23 SE SE7105309A patent/SE374467B/xx unknown
- 1971-04-26 IE IE519/71A patent/IE35169B1/en unknown
- 1971-04-27 JP JP2731971A patent/JPS541153B1/ja active Pending
- 1971-04-29 ES ES391099A patent/ES391099A1/en not_active Expired
- 1971-04-30 KR KR7100611A patent/KR780000083B1/en active
-
1975
- 1975-01-24 CA CA 218617 patent/CA977448A/en not_active Expired
-
1978
- 1978-06-29 JP JP7923978A patent/JPS5456387A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5544471B2 (en) | 1980-11-12 |
JPS5456387A (en) | 1979-05-07 |
KR780000083B1 (en) | 1978-03-30 |
SE374467B (en) | 1975-03-03 |
IE35169B1 (en) | 1975-11-26 |
ES391099A1 (en) | 1974-11-16 |
IE35169L (en) | 1971-11-01 |
JPS541153B1 (en) | 1979-01-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA972826A (en) | Light emitting diode driver | |
CA944050A (en) | Glass-domed electroluminescent diode | |
CA1030642A (en) | Light emitting diode module | |
BE763031A (en) | DIRECTED LIGHT EMITTING DIODE | |
CA1017839A (en) | Display structure having light emitting diodes | |
CA920285A (en) | Extending the operating life of light emitting p-n junction devices | |
CA977448A (en) | Light emitting heterostructure diode | |
CA1021047A (en) | Light emitting diode assembly | |
AU441178B2 (en) | Light emitting heterostructure diode | |
AU2814171A (en) | Light emitting heterostructure diode | |
CA1011862A (en) | Zinc oxide light emitting diode | |
CA1018640A (en) | Efficiency light emitting diode | |
CA907751A (en) | Light emitting heterostructure diode | |
AU4488072A (en) | Gallium phosphide light emitting semiconductive materials | |
AU435397B2 (en) | Extending the operating life of light emitting p-n junction devices | |
CA924023A (en) | Cadmium phosphide laser | |
CA917811A (en) | Directed emission light emitting diode | |
CA834984A (en) | Diode laser | |
CA856997A (en) | Negative resistance light emitting solid state diode devices | |
CA832194A (en) | Avalanche diode | |
CA802489A (en) | Luminescence diodes | |
AU486316B2 (en) | Light emitting diode assembly | |
AU6990074A (en) | Light emitting diode assembly | |
CA846441A (en) | Semiconductor diode | |
CA801889A (en) | Diode assembly |