ES341949A1 - Mejoras en un transistor y en el metodo para fabricarlo. - Google Patents
Mejoras en un transistor y en el metodo para fabricarlo.Info
- Publication number
- ES341949A1 ES341949A1 ES341949A ES341949A ES341949A1 ES 341949 A1 ES341949 A1 ES 341949A1 ES 341949 A ES341949 A ES 341949A ES 341949 A ES341949 A ES 341949A ES 341949 A1 ES341949 A1 ES 341949A1
- Authority
- ES
- Spain
- Prior art keywords
- complementary field
- effect transistors
- common substrate
- epitaxy techniques
- multiple epitaxy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000295 complement effect Effects 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 238000000407 epitaxy Methods 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2710666A GB1084937A (en) | 1965-03-31 | 1966-06-17 | Transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
ES341949A1 true ES341949A1 (es) | 1968-07-16 |
Family
ID=10254291
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES341949A Expired ES341949A1 (es) | 1966-06-17 | 1967-06-17 | Mejoras en un transistor y en el metodo para fabricarlo. |
Country Status (4)
Country | Link |
---|---|
US (1) | US3518509A (es) |
ES (1) | ES341949A1 (es) |
NL (1) | NL6708379A (es) |
SE (1) | SE340319B (es) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3924265A (en) * | 1973-08-29 | 1975-12-02 | American Micro Syst | Low capacitance V groove MOS NOR gate and method of manufacture |
US3975221A (en) * | 1973-08-29 | 1976-08-17 | American Micro-Systems, Inc. | Low capacitance V groove MOS NOR gate and method of manufacture |
JPS5066184A (es) * | 1973-10-12 | 1975-06-04 | ||
GB1534896A (en) * | 1975-05-19 | 1978-12-06 | Itt | Direct metal contact to buried layer |
US4003036A (en) * | 1975-10-23 | 1977-01-11 | American Micro-Systems, Inc. | Single IGFET memory cell with buried storage element |
US4268952A (en) * | 1979-04-09 | 1981-05-26 | International Business Machines Corporation | Method for fabricating self-aligned high resolution non planar devices employing low resolution registration |
US4554570A (en) * | 1982-06-24 | 1985-11-19 | Rca Corporation | Vertically integrated IGFET device |
JPS6126261A (ja) * | 1984-07-16 | 1986-02-05 | Nippon Telegr & Teleph Corp <Ntt> | 縦形mos電界効果トランジスタの製造方法 |
US4788158A (en) * | 1985-09-25 | 1988-11-29 | Texas Instruments Incorporated | Method of making vertical inverter |
US4740826A (en) * | 1985-09-25 | 1988-04-26 | Texas Instruments Incorporated | Vertical inverter |
US4810906A (en) * | 1985-09-25 | 1989-03-07 | Texas Instruments Inc. | Vertical inverter circuit |
US4767722A (en) * | 1986-03-24 | 1988-08-30 | Siliconix Incorporated | Method for making planar vertical channel DMOS structures |
US5124764A (en) * | 1986-10-21 | 1992-06-23 | Texas Instruments Incorporated | Symmetric vertical MOS transistor with improved high voltage operation |
US5160491A (en) * | 1986-10-21 | 1992-11-03 | Texas Instruments Incorporated | Method of making a vertical MOS transistor |
US4835586A (en) * | 1987-09-21 | 1989-05-30 | Siliconix Incorporated | Dual-gate high density fet |
US4914058A (en) * | 1987-12-29 | 1990-04-03 | Siliconix Incorporated | Grooved DMOS process with varying gate dielectric thickness |
US5016067A (en) * | 1988-04-11 | 1991-05-14 | Texas Instruments Incorporated | Vertical MOS transistor |
US5016068A (en) * | 1988-04-15 | 1991-05-14 | Texas Instruments Incorporated | Vertical floating-gate transistor |
JP2991489B2 (ja) * | 1990-11-30 | 1999-12-20 | 株式会社東芝 | 半導体装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2899344A (en) * | 1958-04-30 | 1959-08-11 | Rinse in | |
US3356858A (en) * | 1963-06-18 | 1967-12-05 | Fairchild Camera Instr Co | Low stand-by power complementary field effect circuitry |
US3339086A (en) * | 1964-06-11 | 1967-08-29 | Itt | Surface controlled avalanche transistor |
US3340598A (en) * | 1965-04-19 | 1967-09-12 | Teledyne Inc | Method of making field effect transistor device |
US3412297A (en) * | 1965-12-16 | 1968-11-19 | United Aircraft Corp | Mos field-effect transistor with a onemicron vertical channel |
-
1967
- 1967-05-04 US US636161A patent/US3518509A/en not_active Expired - Lifetime
- 1967-06-16 NL NL6708379A patent/NL6708379A/xx unknown
- 1967-06-17 ES ES341949A patent/ES341949A1/es not_active Expired
- 1967-06-19 SE SE08667/67A patent/SE340319B/xx unknown
Also Published As
Publication number | Publication date |
---|---|
SE340319B (es) | 1971-11-15 |
US3518509A (en) | 1970-06-30 |
NL6708379A (es) | 1967-12-18 |
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