ES313647A1 - Perfeccionamientos en la construccion de transistores - Google Patents

Perfeccionamientos en la construccion de transistores

Info

Publication number
ES313647A1
ES313647A1 ES0313647A ES313647A ES313647A1 ES 313647 A1 ES313647 A1 ES 313647A1 ES 0313647 A ES0313647 A ES 0313647A ES 313647 A ES313647 A ES 313647A ES 313647 A1 ES313647 A1 ES 313647A1
Authority
ES
Spain
Prior art keywords
region
transistors
translation
construction
machine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0313647A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of ES313647A1 publication Critical patent/ES313647A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
  • Manufacturing And Processing Devices For Dough (AREA)
ES0313647A 1964-09-29 1965-06-01 Perfeccionamientos en la construccion de transistores Expired ES313647A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US40002964A 1964-09-29 1964-09-29

Publications (1)

Publication Number Publication Date
ES313647A1 true ES313647A1 (es) 1965-07-16

Family

ID=23581939

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0313647A Expired ES313647A1 (es) 1964-09-29 1965-06-01 Perfeccionamientos en la construccion de transistores

Country Status (7)

Country Link
BE (1) BE665844A (es)
CH (1) CH439500A (es)
DK (1) DK117790B (es)
ES (1) ES313647A1 (es)
FR (1) FR1453904A (es)
NL (1) NL6510379A (es)
NO (1) NO117036B (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6706641A (es) * 1966-11-07 1968-11-13
GB1245882A (en) * 1968-05-22 1971-09-08 Rca Corp Power transistor with high -resistivity connection

Also Published As

Publication number Publication date
DK117790B (da) 1970-06-01
NL6510379A (es) 1966-03-30
NO117036B (es) 1969-06-23
BE665844A (es) 1965-10-18
CH439500A (de) 1967-07-15
FR1453904A (fr) 1966-07-22

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