GB1245882A - Power transistor with high -resistivity connection - Google Patents

Power transistor with high -resistivity connection

Info

Publication number
GB1245882A
GB1245882A GB2434269A GB2434269A GB1245882A GB 1245882 A GB1245882 A GB 1245882A GB 2434269 A GB2434269 A GB 2434269A GB 2434269 A GB2434269 A GB 2434269A GB 1245882 A GB1245882 A GB 1245882A
Authority
GB
United Kingdom
Prior art keywords
power transistor
layers
resistivity connection
silicon
resistivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2434269A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1245882A publication Critical patent/GB1245882A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1,245,882. Semi-conductor device. RCA CORP. 13 May, 1969 [22 May, 1968], No. 24342/69. Heading H1K. Connections to the emitter 8 and base 6 of a silicon power transistor comprise relatively high resistivity layers 12, 16 of an alloy of titanium, zirconium, magnesium or iron with silicon, covered with relatively low resistivity layers 13, 18. Further top layers 14, 20 of high conductivity metal such as aluminium, gold or chromium are also present.
GB2434269A 1968-05-22 1969-05-13 Power transistor with high -resistivity connection Expired GB1245882A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73110868A 1968-05-22 1968-05-22

Publications (1)

Publication Number Publication Date
GB1245882A true GB1245882A (en) 1971-09-08

Family

ID=24938096

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2434269A Expired GB1245882A (en) 1968-05-22 1969-05-13 Power transistor with high -resistivity connection

Country Status (4)

Country Link
DE (1) DE1926016A1 (en)
FR (1) FR2009108B1 (en)
GB (1) GB1245882A (en)
NL (1) NL6907768A (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504239A (en) * 1964-01-31 1970-03-31 Rca Corp Transistor with distributed resistor between emitter lead and emitter region
ES313647A1 (en) * 1964-09-29 1965-07-16 Fairchild Camera Instr Co Improvements in the construction of transistors. (Machine-translation by Google Translate, not legally binding)
NL6706641A (en) * 1966-11-07 1968-11-13

Also Published As

Publication number Publication date
DE1926016A1 (en) 1970-04-02
FR2009108B1 (en) 1974-08-09
NL6907768A (en) 1969-11-25
FR2009108A1 (en) 1970-01-30

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