FR1504868A - Microcircuit semiconducteur - Google Patents

Microcircuit semiconducteur

Info

Publication number
FR1504868A
FR1504868A FR85041A FR85041A FR1504868A FR 1504868 A FR1504868 A FR 1504868A FR 85041 A FR85041 A FR 85041A FR 85041 A FR85041 A FR 85041A FR 1504868 A FR1504868 A FR 1504868A
Authority
FR
France
Prior art keywords
semiconductor microcircuit
microcircuit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR85041A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Application granted granted Critical
Publication of FR1504868A publication Critical patent/FR1504868A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
FR85041A 1965-12-02 1966-11-25 Microcircuit semiconducteur Expired FR1504868A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US51119765A 1965-12-02 1965-12-02

Publications (1)

Publication Number Publication Date
FR1504868A true FR1504868A (fr) 1967-12-08

Family

ID=24033862

Family Applications (1)

Application Number Title Priority Date Filing Date
FR85041A Expired FR1504868A (fr) 1965-12-02 1966-11-25 Microcircuit semiconducteur

Country Status (8)

Country Link
US (1) US3430110A (fr)
BR (1) BR6684160D0 (fr)
DE (1) DE1564547B2 (fr)
ES (1) ES333917A1 (fr)
FR (1) FR1504868A (fr)
GB (1) GB1165029A (fr)
NL (1) NL6616936A (fr)
SE (1) SE333196B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3581165A (en) * 1967-01-23 1971-05-25 Motorola Inc Voltage distribution system for integrated circuits utilizing low resistivity semiconductive paths for the transmission of voltages

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3519898A (en) * 1967-01-31 1970-07-07 Nippon Electric Co High power semiconductor device having a plurality of emitter regions
US3538397A (en) * 1967-05-09 1970-11-03 Motorola Inc Distributed semiconductor power supplies and decoupling capacitor therefor
US3772097A (en) * 1967-05-09 1973-11-13 Motorola Inc Epitaxial method for the fabrication of a distributed semiconductor power supply containing a decoupling capacitor
US3653988A (en) * 1968-02-05 1972-04-04 Bell Telephone Labor Inc Method of forming monolithic semiconductor integrated circuit devices
US3573509A (en) * 1968-09-09 1971-04-06 Texas Instruments Inc Device for reducing bipolar effects in mos integrated circuits
US3946425A (en) * 1969-03-12 1976-03-23 Hitachi, Ltd. Multi-emitter transistor having heavily doped N+ regions surrounding base region of transistors
US3769105A (en) * 1970-01-26 1973-10-30 Ibm Process for making an integrated circuit with a damping resistor in combination with a buried decoupling capacitor
US3619735A (en) * 1970-01-26 1971-11-09 Ibm Integrated circuit with buried decoupling capacitor
DE2705990A1 (de) * 1977-02-12 1978-08-17 Engl Walter L Prof Dr Rer Nat Integrierte schaltung mit einem thyristor e2
DE2706031A1 (de) * 1977-02-12 1978-08-17 Engl Walter L Prof Dr Rer Nat Integrierte schaltung mit einem thyristor
JPS596514B2 (ja) * 1977-03-08 1984-02-13 日本電信電話株式会社 Ｐｎ接合分離法による低漏話モノリシツクｐｎｐｎスイツチマトリクス
US4316319A (en) * 1977-10-25 1982-02-23 International Business Machines Corporation Method for making a high sheet resistance structure for high density integrated circuits
US4228450A (en) * 1977-10-25 1980-10-14 International Business Machines Corporation Buried high sheet resistance structure for high density integrated circuits with reach through contacts
JPS5534619U (fr) * 1978-08-25 1980-03-06
DE2846637A1 (de) * 1978-10-11 1980-04-30 Bbc Brown Boveri & Cie Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen
JPS6097659A (ja) * 1983-11-01 1985-05-31 Matsushita Electronics Corp 半導体集積回路
US4567542A (en) * 1984-04-23 1986-01-28 Nec Corporation Multilayer ceramic substrate with interlayered capacitor
US4755697A (en) * 1985-07-17 1988-07-05 International Rectifier Corporation Bidirectional output semiconductor field effect transistor
US5034337A (en) * 1989-02-10 1991-07-23 Texas Instruments Incorporated Method of making an integrated circuit that combines multi-epitaxial power transistors with logic/analog devices
US5027183A (en) * 1990-04-20 1991-06-25 International Business Machines Isolated semiconductor macro circuit
US5428297A (en) * 1993-06-15 1995-06-27 Grace; James W. Precision integrated resistors
US5608259A (en) * 1994-03-02 1997-03-04 Deshazo; Thomas R. Reverse current flow prevention in a diffused resistor
JP3344138B2 (ja) * 1995-01-30 2002-11-11 株式会社日立製作所 半導体複合センサ
DE19906384A1 (de) 1999-02-16 2000-08-24 Siemens Ag IGBT mit PN-Isolation
US8384157B2 (en) * 2006-05-10 2013-02-26 International Rectifier Corporation High ohmic integrated resistor with improved linearity
US11887945B2 (en) * 2020-09-30 2024-01-30 Wolfspeed, Inc. Semiconductor device with isolation and/or protection structures

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1209312A (fr) * 1958-12-17 1960-03-01 Hughes Aircraft Co Perfectionnements aux dispositifs semi-conducteurs du type à jonction
GB945742A (fr) * 1959-02-06 Texas Instruments Inc
NL297820A (fr) * 1962-10-05
US3258606A (en) * 1962-10-16 1966-06-28 Integrated circuits using thermal effects
US3229119A (en) * 1963-05-17 1966-01-11 Sylvania Electric Prod Transistor logic circuits
US3265905A (en) * 1964-02-06 1966-08-09 Us Army Integrated semiconductor resistance element
US3341755A (en) * 1964-03-20 1967-09-12 Westinghouse Electric Corp Switching transistor structure and method of making the same
GB1050805A (fr) * 1964-06-23 1900-01-01
US3312882A (en) * 1964-06-25 1967-04-04 Westinghouse Electric Corp Transistor structure and method of making, suitable for integration and exhibiting good power handling capability and frequency response
US3327182A (en) * 1965-06-14 1967-06-20 Westinghouse Electric Corp Semiconductor integrated circuit structure and method of making the same
US3370995A (en) * 1965-08-02 1968-02-27 Texas Instruments Inc Method for fabricating electrically isolated semiconductor devices in integrated circuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3581165A (en) * 1967-01-23 1971-05-25 Motorola Inc Voltage distribution system for integrated circuits utilizing low resistivity semiconductive paths for the transmission of voltages

Also Published As

Publication number Publication date
ES333917A1 (es) 1967-11-01
GB1165029A (en) 1969-09-24
BR6684160D0 (pt) 1973-05-15
SE333196B (sv) 1971-03-08
DE1564547A1 (de) 1970-05-21
DE1564547B2 (de) 1975-02-20
NL6616936A (fr) 1967-06-05
US3430110A (en) 1969-02-25

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