AT264589B - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
AT264589B
AT264589B AT622366A AT622366A AT264589B AT 264589 B AT264589 B AT 264589B AT 622366 A AT622366 A AT 622366A AT 622366 A AT622366 A AT 622366A AT 264589 B AT264589 B AT 264589B
Authority
AT
Austria
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
AT622366A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT264589B publication Critical patent/AT264589B/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
AT622366A 1965-07-01 1966-06-29 Halbleiteranordnung AT264589B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0097929 1965-07-01

Publications (1)

Publication Number Publication Date
AT264589B true AT264589B (de) 1968-09-10

Family

ID=7521098

Family Applications (1)

Application Number Title Priority Date Filing Date
AT622366A AT264589B (de) 1965-07-01 1966-06-29 Halbleiteranordnung

Country Status (7)

Country Link
US (1) US3426255A (de)
AT (1) AT264589B (de)
CH (1) CH449781A (de)
DE (1) DE1514495C3 (de)
GB (1) GB1139749A (de)
NL (1) NL6608968A (de)
SE (1) SE316839B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3463973A (en) * 1967-09-12 1969-08-26 Rca Corp Insulating ferroelectric gate adaptive resistor
US3531696A (en) * 1967-09-30 1970-09-29 Nippon Electric Co Semiconductor device with hysteretic capacity vs. voltage characteristics
US3569795A (en) * 1969-05-29 1971-03-09 Us Army Voltage-variable, ferroelectric capacitor
JPS4819113B1 (de) * 1969-08-27 1973-06-11
US3731163A (en) * 1972-03-22 1973-05-01 United Aircraft Corp Low voltage charge storage memory element
US3798619A (en) * 1972-10-24 1974-03-19 K Samofalov Piezoelectric transducer memory with non-destructive read out
US4024560A (en) * 1975-09-04 1977-05-17 Westinghouse Electric Corporation Pyroelectric-field effect electromagnetic radiation detector
US4473836A (en) * 1982-05-03 1984-09-25 Dalsa Inc. Integrable large dynamic range photodetector element for linear and area integrated circuit imaging arrays
US4847517A (en) * 1988-02-16 1989-07-11 Ltv Aerospace & Defense Co. Microwave tube modulator
US5109357A (en) * 1988-04-22 1992-04-28 Ramtron Corporation DRAM memory cell and method of operation thereof for transferring increased amount of charge to a bit line
US5345414A (en) * 1992-01-27 1994-09-06 Rohm Co., Ltd. Semiconductor memory device having ferroelectric film
US5504699A (en) * 1994-04-08 1996-04-02 Goller; Stuart E. Nonvolatile magnetic analog memory
JP3532747B2 (ja) * 1997-12-09 2004-05-31 富士通株式会社 強誘電体記憶装置、フラッシュメモリ、および不揮発性ランダムアクセスメモリ
JP2001118942A (ja) * 1999-10-21 2001-04-27 Matsushita Electronics Industry Corp トンネルチャネルトランジスタおよびその駆動方法
WO2011111309A1 (ja) * 2010-03-11 2011-09-15 パナソニック株式会社 焦電型温度センサを用いて温度を測定する方法
US9166004B2 (en) * 2010-12-23 2015-10-20 Intel Corporation Semiconductor device contacts
CN113257913A (zh) * 2020-02-12 2021-08-13 中国科学院物理研究所 基于铁电畴反转的突触三端器件

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2791761A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Electrical switching and storage
NL202404A (de) * 1955-02-18
US3365631A (en) * 1965-07-14 1968-01-23 Ibm Semiconductor-ferroelectric dielectrics

Also Published As

Publication number Publication date
CH449781A (de) 1968-01-15
GB1139749A (en) 1969-01-15
US3426255A (en) 1969-02-04
SE316839B (de) 1969-11-03
DE1514495B2 (de) 1974-03-21
NL6608968A (de) 1967-01-02
DE1514495A1 (de) 1969-08-07
DE1514495C3 (de) 1974-10-17

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