SE316839B - - Google Patents

Info

Publication number
SE316839B
SE316839B SE8991/66A SE899166A SE316839B SE 316839 B SE316839 B SE 316839B SE 8991/66 A SE8991/66 A SE 8991/66A SE 899166 A SE899166 A SE 899166A SE 316839 B SE316839 B SE 316839B
Authority
SE
Sweden
Application number
SE8991/66A
Inventor
W Heywang
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE316839B publication Critical patent/SE316839B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
SE8991/66A 1965-07-01 1966-06-30 SE316839B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0097929 1965-07-01

Publications (1)

Publication Number Publication Date
SE316839B true SE316839B (xx) 1969-11-03

Family

ID=7521098

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8991/66A SE316839B (xx) 1965-07-01 1966-06-30

Country Status (7)

Country Link
US (1) US3426255A (xx)
AT (1) AT264589B (xx)
CH (1) CH449781A (xx)
DE (1) DE1514495C3 (xx)
GB (1) GB1139749A (xx)
NL (1) NL6608968A (xx)
SE (1) SE316839B (xx)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3450966A (en) * 1967-09-12 1969-06-17 Rca Corp Ferroelectric insulated gate field effect device
US3531696A (en) * 1967-09-30 1970-09-29 Nippon Electric Co Semiconductor device with hysteretic capacity vs. voltage characteristics
US3569795A (en) * 1969-05-29 1971-03-09 Us Army Voltage-variable, ferroelectric capacitor
JPS4819113B1 (xx) * 1969-08-27 1973-06-11
US3731163A (en) * 1972-03-22 1973-05-01 United Aircraft Corp Low voltage charge storage memory element
US3798619A (en) * 1972-10-24 1974-03-19 K Samofalov Piezoelectric transducer memory with non-destructive read out
US4024560A (en) * 1975-09-04 1977-05-17 Westinghouse Electric Corporation Pyroelectric-field effect electromagnetic radiation detector
US4473836A (en) * 1982-05-03 1984-09-25 Dalsa Inc. Integrable large dynamic range photodetector element for linear and area integrated circuit imaging arrays
US4847517A (en) * 1988-02-16 1989-07-11 Ltv Aerospace & Defense Co. Microwave tube modulator
US5109357A (en) * 1988-04-22 1992-04-28 Ramtron Corporation DRAM memory cell and method of operation thereof for transferring increased amount of charge to a bit line
US5345414A (en) * 1992-01-27 1994-09-06 Rohm Co., Ltd. Semiconductor memory device having ferroelectric film
US5504699A (en) * 1994-04-08 1996-04-02 Goller; Stuart E. Nonvolatile magnetic analog memory
JP3532747B2 (ja) * 1997-12-09 2004-05-31 富士通株式会社 強誘電体記憶装置、フラッシュメモリ、および不揮発性ランダムアクセスメモリ
JP2001118942A (ja) * 1999-10-21 2001-04-27 Matsushita Electronics Industry Corp トンネルチャネルトランジスタおよびその駆動方法
JP4833382B2 (ja) * 2010-03-11 2011-12-07 パナソニック株式会社 焦電型温度センサを用いて温度を測定する方法
US9166004B2 (en) 2010-12-23 2015-10-20 Intel Corporation Semiconductor device contacts
CN113257913A (zh) * 2020-02-12 2021-08-13 中国科学院物理研究所 基于铁电畴反转的突触三端器件

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2791761A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Electrical switching and storage
NL97896C (xx) * 1955-02-18
US3365631A (en) * 1965-07-14 1968-01-23 Ibm Semiconductor-ferroelectric dielectrics

Also Published As

Publication number Publication date
NL6608968A (xx) 1967-01-02
DE1514495B2 (de) 1974-03-21
GB1139749A (en) 1969-01-15
DE1514495C3 (de) 1974-10-17
CH449781A (de) 1968-01-15
US3426255A (en) 1969-02-04
AT264589B (de) 1968-09-10
DE1514495A1 (de) 1969-08-07

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