CH437539A - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
CH437539A
CH437539A CH421266A CH421266A CH437539A CH 437539 A CH437539 A CH 437539A CH 421266 A CH421266 A CH 421266A CH 421266 A CH421266 A CH 421266A CH 437539 A CH437539 A CH 437539A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
CH421266A
Other languages
English (en)
Inventor
Edqvist Olle
Svedberg Per
Vedin Bengt-Arne
Original Assignee
Asea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Ab filed Critical Asea Ab
Publication of CH437539A publication Critical patent/CH437539A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
CH421266A 1965-03-25 1966-03-22 Halbleiteranordnung CH437539A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE384965 1965-03-25

Publications (1)

Publication Number Publication Date
CH437539A true CH437539A (de) 1967-06-15

Family

ID=20262993

Family Applications (1)

Application Number Title Priority Date Filing Date
CH421266A CH437539A (de) 1965-03-25 1966-03-22 Halbleiteranordnung

Country Status (5)

Country Link
US (1) US3437886A (de)
CH (1) CH437539A (de)
DE (1) DE1539636B1 (de)
GB (1) GB1134019A (de)
NL (1) NL6603372A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925807A (en) * 1973-11-27 1975-12-09 Licentia Gmbh High voltage thyristor

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764326A1 (de) * 1968-05-17 1971-07-01 Bbc Brown Boveri & Cie Verfahren zur Anbringung einer Hohlkehle an einem Halbleiterbauelement
US3628106A (en) * 1969-05-05 1971-12-14 Gen Electric Passivated semiconductor device with protective peripheral junction portion
US3742593A (en) * 1970-12-11 1973-07-03 Gen Electric Semiconductor device with positively beveled junctions and process for its manufacture
US3943547A (en) * 1970-12-26 1976-03-09 Hitachi, Ltd. Semiconductor device
US3731159A (en) * 1971-05-19 1973-05-01 Anheuser Busch Microwave diode with low capacitance package
DE7328984U (de) * 1973-07-06 1975-05-15 Bbc Ag Brown Boveri & Cie Leistungshalbleiterbauelement
US4110780A (en) * 1973-07-06 1978-08-29 Bbc Brown Boveri & Company, Limited Semiconductor power component
DE2340128C3 (de) * 1973-08-08 1982-08-12 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiterbauelement hoher Sperrfähigkeit
JPS5624972A (en) * 1979-08-07 1981-03-10 Mitsubishi Electric Corp Thyristor
DE3137695A1 (de) * 1981-09-22 1983-04-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit einem mehrschichten-halbleiterkoerper mit pnpn-schichtfolge und verfahren zu seiner herstellung
DE102019105727B4 (de) * 2019-03-07 2020-10-15 Semikron Elektronik Gmbh & Co. Kg Thyristor oder Diode
EP4006990B1 (de) 2020-11-27 2023-04-05 Hitachi Energy Switzerland AG Halbleiterbauelement mit einer seitenfläche mit unterschiedlichen teilbereichen

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2980830A (en) * 1956-08-22 1961-04-18 Shockley William Junction transistor
US3055776A (en) * 1960-12-12 1962-09-25 Pacific Semiconductors Inc Masking technique
BE628619A (de) * 1962-02-20
GB1052661A (de) * 1963-01-30 1900-01-01
GB1003654A (en) * 1964-04-24 1965-09-08 Standard Telephones Cables Ltd Semiconductor devices
US3370209A (en) * 1964-08-31 1968-02-20 Gen Electric Power bulk breakdown semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925807A (en) * 1973-11-27 1975-12-09 Licentia Gmbh High voltage thyristor

Also Published As

Publication number Publication date
GB1134019A (en) 1968-11-20
US3437886A (en) 1969-04-08
DE1539636B1 (de) 1971-01-14
NL6603372A (de) 1966-09-26

Similar Documents

Publication Publication Date Title
FR1479917A (fr) Dispositif semi-conducteur
AT263084B (de) Halbleitervorrichtung
CH470085A (de) Halbleitervorrichtung
CH474851A (de) Halbleiteranordnung
FR1475436A (fr) Dispositif semi-conducteur
AT264589B (de) Halbleiteranordnung
AT269217B (de) Halbleitervorrichtung
BR6677894D0 (pt) Dispositivo semicondutor
CH437539A (de) Halbleiteranordnung
CH438497A (de) Halbleiteranordnung
FR1489272A (fr) Dispositif semi-conducteur
AT273227B (de) Halbleitervorrichtung
AT254987B (de) Halbleiteranordnung
CH469357A (de) Halbleiteranordnung
AT265432B (de) Halbleiterbauelement
AT271583B (de) Optoelektronische Halbleiteranordnung
CH444318A (de) Halbleiterbauelement
CH443492A (de) Halbleiteranordnung
FR1481737A (fr) Semi-conducteur
CH446539A (de) Halbleiterbauelement
AT266218B (de) Halbleiterbauelement
FR1471729A (fr) Dispositif semi-conducteur
FR1470898A (fr) Dispositif semi-conducteur
AT266921B (de) Halbleitervorrichtung
CH484520A (de) Halbleitervorrichtung