GB1003654A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1003654A
GB1003654A GB1702664A GB1702664A GB1003654A GB 1003654 A GB1003654 A GB 1003654A GB 1702664 A GB1702664 A GB 1702664A GB 1702664 A GB1702664 A GB 1702664A GB 1003654 A GB1003654 A GB 1003654A
Authority
GB
United Kingdom
Prior art keywords
region
type
semi
oxide
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1702664A
Inventor
Frederick John Raymond
Zenon Kurpisz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB1702664A priority Critical patent/GB1003654A/en
Priority to DE19651514755 priority patent/DE1514755A1/en
Publication of GB1003654A publication Critical patent/GB1003654A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)

Abstract

1,003,654. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. April 24, 1964, No. 17026/64. Heading H1K. A PNP or NPN semi-conductor device is formed in a body of the shape shown in Fig. 1, the central N or P region 4 being of higher resistivity than the adjacent regions 3 and 6 and the PN junctions 9 and 10 breaking out into the surface of the body only at the top of the upstanding peripheral wall portion 11, the latter being so shaped as to provide acute angles a and # between the junctions and the surfaces at which they break out. This construction is designed to ensure that any junction breakdown occurs in the body and not on the surface of the device and is particularly applicable to semi-conductor controlled rectifiers of the avalanche type. The particular devices shown has a PNPN structure in which the anode and cathode regions 3 and 6 are P type and the trigger region 8 and intermediate high resistivity region 4 are N type. The device is formed by first removing-by chemical etching, air abrasion or ultrasonic shaping- a central zone from one face of a disc of high resistivity N-type silicon or germanium, oxidizing the surface 14, Fig. 6, and diffusing gallium through the oxide to form the P regions 3 and 6. By successive selective removal and replacement of oxide, using the remaining oxide at each stage as a mask, the N region 8 (phosphorus doped), P+ region 2 (boron-doped) and gold on nickel electrodes 1, 5, 7 are successively deposited. Finally the groove 12 is cut by etching, air abrasion or diamond cutting and the device cleaned, varnished, mounted between molybdenum discs and encapsulated.
GB1702664A 1964-04-24 1964-04-24 Semiconductor devices Expired GB1003654A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB1702664A GB1003654A (en) 1964-04-24 1964-04-24 Semiconductor devices
DE19651514755 DE1514755A1 (en) 1964-04-24 1965-04-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1702664A GB1003654A (en) 1964-04-24 1964-04-24 Semiconductor devices

Publications (1)

Publication Number Publication Date
GB1003654A true GB1003654A (en) 1965-09-08

Family

ID=10087877

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1702664A Expired GB1003654A (en) 1964-04-24 1964-04-24 Semiconductor devices

Country Status (2)

Country Link
DE (1) DE1514755A1 (en)
GB (1) GB1003654A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3437886A (en) * 1965-03-25 1969-04-08 Asea Ab Thyristor with positively bevelled junctions
CN100429508C (en) * 2006-11-22 2008-10-29 哈尔滨工业大学 Phosphorus-doped amorphous diamond film electrode and preparation method of the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3437886A (en) * 1965-03-25 1969-04-08 Asea Ab Thyristor with positively bevelled junctions
CN100429508C (en) * 2006-11-22 2008-10-29 哈尔滨工业大学 Phosphorus-doped amorphous diamond film electrode and preparation method of the same

Also Published As

Publication number Publication date
DE1514755A1 (en) 1969-06-19

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