ES371158A1 - Una disposicion de circuito monolitico. - Google Patents

Una disposicion de circuito monolitico.

Info

Publication number
ES371158A1
ES371158A1 ES371158A ES371158A ES371158A1 ES 371158 A1 ES371158 A1 ES 371158A1 ES 371158 A ES371158 A ES 371158A ES 371158 A ES371158 A ES 371158A ES 371158 A1 ES371158 A1 ES 371158A1
Authority
ES
Spain
Prior art keywords
mos
high voltage
driver circuit
voltage driver
bipolar high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES371158A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of ES371158A1 publication Critical patent/ES371158A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
ES371158A 1968-09-09 1969-09-03 Una disposicion de circuito monolitico. Expired ES371158A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75825368A 1968-09-09 1968-09-09

Publications (1)

Publication Number Publication Date
ES371158A1 true ES371158A1 (es) 1971-10-16

Family

ID=25051097

Family Applications (1)

Application Number Title Priority Date Filing Date
ES371158A Expired ES371158A1 (es) 1968-09-09 1969-09-03 Una disposicion de circuito monolitico.

Country Status (6)

Country Link
JP (1) JPS5533185B1 (es)
DE (1) DE1945217A1 (es)
ES (1) ES371158A1 (es)
FR (1) FR2017616A1 (es)
GB (1) GB1277114A (es)
NL (1) NL6911903A (es)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5013132B1 (es) * 1970-12-02 1975-05-17

Also Published As

Publication number Publication date
GB1277114A (en) 1972-06-07
NL6911903A (es) 1970-03-11
DE1945217A1 (de) 1970-03-19
JPS5533185B1 (es) 1980-08-29
FR2017616A1 (es) 1970-05-22

Similar Documents

Publication Publication Date Title
ES330410A1 (es) Mejoras en conjuntos transistores.
ES328172A1 (es) Un dispositivo semiconductor compuesto.
ES370428A1 (es) Una disposicion de circuito integrado (mos) de semiconduc- tor de metal-oxido.
NL170902C (nl) Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling.
BR6909280D0 (pt) Dispositivo semicondutor com multiplos terminais
ES370818A1 (es) Una disposicion de circuito.
NL169804C (nl) Geintegreerde halfgeleidertrekkerschakeling.
ES323139A1 (es) Un dispositivo semiconductor de estado solido.
ES330535A1 (es) Un dispositivo de efecto gunn.
ES371158A1 (es) Una disposicion de circuito monolitico.
NL169803C (nl) Geintegreerde halfgeleiderschakeling.
ES327508A1 (es) Dispositivo semiconductor que tiene una pluralidad de elementos de circuito formados sobre el mismo cuerpo semiconductor.
CH449751A (de) Schaltungsanordnung mit mehreren parallel geschalteten Halbleiterbauelementen
NL144436B (nl) Halfgeleiderinrichting, in het bijzonder planaire transistor.
ES352147A1 (es) Una disposicion de circuito monolitico que tiene un par de transistores complementarios adaptados.
ES329228A1 (es) Un dispositivo transistor.
DK117719B (da) Elektrisk komponent, specielt halvlederorgan.
AT273233B (de) Halbleiteranordnung mit mindestens einem in Emitterschaltung betriebenen Transistor
ES308767A3 (es) Un dispositivo de circuito semiconductor microminiaturizado integrado
ES308768A3 (es) Un dispositivo de circuito semiconductor completo, microminiaturizado, integrado
ES315620A1 (es) Un dispositivo semiconductor para circuitos de ultrafrecuencia.
ES319542A1 (es) Un molino de martillos con circulacion forzada por ventilacion.
NL145719B (nl) Planaire siliciumtransistorschakeling.
ES331860A1 (es) Perfeccionamientos en los medios de señalizacion por intermitencia electronica.
ES313579A1 (es) Perfeccionamientos en la fabricacion de dispositivos semi- conductores.