GB1277114A - Mos-bipolar high voltage driver circuit - Google Patents
Mos-bipolar high voltage driver circuitInfo
- Publication number
- GB1277114A GB1277114A GB3589169A GB3589169A GB1277114A GB 1277114 A GB1277114 A GB 1277114A GB 3589169 A GB3589169 A GB 3589169A GB 3589169 A GB3589169 A GB 3589169A GB 1277114 A GB1277114 A GB 1277114A
- Authority
- GB
- United Kingdom
- Prior art keywords
- mosfets
- binary
- decoder
- share
- division
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000295 complement effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
1277114 Transistor gating circuits TEXAS INSTRUMENTS Inc 16 July 1969 [9 Sept 1968] 35891/69 Heading H3T [Also in Division H1] Decimal outputs 0-9 of a binary-todecimal decoder 12 are connected through respective driver stages comprising MOSFET/ bipolar transistor pairs such as 30/40 to cathodes 50-59 of an alphanumeric display tube 60. The MOSFETs 30-39 all share a common drain region in an integrated circuit structure (see Division H1) and the source of each is connected to the emitter of one of the bipolar transistors 40-49, all of which share a common base region, e.g. the semi-conductor substrate carrying the entire circuit. The common drain of the MOSFETs 30-39 is connected to a voltage-controlled Eccles-Jordan flip-flop 66. Each decimal output column of the decoder 12 is connected to the drains of four p channel enhancement mode MOSFETs, the gates of which are connected to four of a total of eight binary input lines to four of which, A-D, true binary inputs are supplied, the other four, A-D, receiving complement binary inputs.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US75825368A | 1968-09-09 | 1968-09-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1277114A true GB1277114A (en) | 1972-06-07 |
Family
ID=25051097
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3589169A Expired GB1277114A (en) | 1968-09-09 | 1969-07-16 | Mos-bipolar high voltage driver circuit |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5533185B1 (en) |
DE (1) | DE1945217A1 (en) |
ES (1) | ES371158A1 (en) |
FR (1) | FR2017616A1 (en) |
GB (1) | GB1277114A (en) |
NL (1) | NL6911903A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5013132B1 (en) * | 1970-12-02 | 1975-05-17 |
-
1969
- 1969-07-16 GB GB3589169A patent/GB1277114A/en not_active Expired
- 1969-08-05 NL NL6911903A patent/NL6911903A/xx unknown
- 1969-08-29 FR FR6929577A patent/FR2017616A1/fr not_active Withdrawn
- 1969-09-03 ES ES371158A patent/ES371158A1/en not_active Expired
- 1969-09-05 JP JP7005969A patent/JPS5533185B1/ja active Pending
- 1969-09-06 DE DE19691945217 patent/DE1945217A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS5533185B1 (en) | 1980-08-29 |
NL6911903A (en) | 1970-03-11 |
ES371158A1 (en) | 1971-10-16 |
DE1945217A1 (en) | 1970-03-19 |
FR2017616A1 (en) | 1970-05-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |