GB1223543A - Improvements to field-effect transistor circuits - Google Patents

Improvements to field-effect transistor circuits

Info

Publication number
GB1223543A
GB1223543A GB688269A GB688269A GB1223543A GB 1223543 A GB1223543 A GB 1223543A GB 688269 A GB688269 A GB 688269A GB 688269 A GB688269 A GB 688269A GB 1223543 A GB1223543 A GB 1223543A
Authority
GB
United Kingdom
Prior art keywords
transistors
pair
field
effect transistor
feb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB688269A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1223543A publication Critical patent/GB1223543A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

1,223,543. Semi-conductor devices. THOMSON-CSF. 7 Feb., 1969 [9 Feb., 1968], No.' 6882/69. Heading HlK. An integrated circuit comprises two pairs of field-effect transistors A-D, B-C, preferably of the metal-oxide-silicon type, in which the sources, drains and gates of the two transistors of each pair are respectively interconnected (i.e. 1-10, 2-11, 3-12, 4-7, 5-8, 6-9) and in which the locations of the two transistors of each pair are symmetrically situated about a point M which is the same for both pairs. The two elements of each pair may be derived from each other by translation alone as shown, or by translation plus rotation through 180 degrees. In one embodiment all four transistors have a common source region.
GB688269A 1968-02-09 1969-02-07 Improvements to field-effect transistor circuits Expired GB1223543A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR139375 1968-02-09

Publications (1)

Publication Number Publication Date
GB1223543A true GB1223543A (en) 1971-02-24

Family

ID=8645800

Family Applications (1)

Application Number Title Priority Date Filing Date
GB688269A Expired GB1223543A (en) 1968-02-09 1969-02-07 Improvements to field-effect transistor circuits

Country Status (4)

Country Link
DE (1) DE1906324C3 (en)
FR (1) FR1563879A (en)
GB (1) GB1223543A (en)
NL (1) NL6901879A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4936515B1 (en) * 1970-06-10 1974-10-01
DE2154654C3 (en) * 1971-11-03 1982-04-15 Siemens AG, 1000 Berlin und 8000 München Voltage divider circuitry and method of making the same
US3995304A (en) * 1972-01-10 1976-11-30 Teledyne, Inc. D/A bit switch
US4599634A (en) * 1978-08-15 1986-07-08 National Semiconductor Corporation Stress insensitive integrated circuit
US4455566A (en) * 1979-06-18 1984-06-19 Fujitsu Limited Highly integrated semiconductor memory device
JPS5688350A (en) * 1979-12-19 1981-07-17 Toshiba Corp Semiconductor device
JPH0642537B2 (en) * 1985-11-15 1994-06-01 株式会社東芝 Semiconductor device
DE3818533C2 (en) * 1987-06-01 1994-05-26 Mitsubishi Electric Corp Field effect transistor
US5040035A (en) * 1989-12-22 1991-08-13 At&T Bell Laboratories MOS devices having improved threshold match

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL293447A (en) * 1962-05-31
GB1054513A (en) * 1963-03-21 1900-01-01
GB1054514A (en) * 1963-04-05 1900-01-01

Also Published As

Publication number Publication date
FR1563879A (en) 1969-04-18
DE1906324A1 (en) 1969-09-04
DE1906324C3 (en) 1983-12-29
DE1906324B2 (en) 1979-11-29
NL6901879A (en) 1969-08-12

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