GB983275A - Semiconductor networks including field-effect and junction transistors - Google Patents

Semiconductor networks including field-effect and junction transistors

Info

Publication number
GB983275A
GB983275A GB23277/64A GB2327764A GB983275A GB 983275 A GB983275 A GB 983275A GB 23277/64 A GB23277/64 A GB 23277/64A GB 2327764 A GB2327764 A GB 2327764A GB 983275 A GB983275 A GB 983275A
Authority
GB
United Kingdom
Prior art keywords
effect
networks including
junction transistors
including field
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB23277/64A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US26133A external-priority patent/US3130378A/en
Priority claimed from US26090A external-priority patent/US3112411A/en
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB983275A publication Critical patent/GB983275A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/002—Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/354—Astable circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

983,275. Transistors; semi-conductor devices. TEXAS INSTRUMENTS Inc. May 1, 1961 [May 2, 1960], No. 23277/64. Divided out of 983,252. Heading H1K. A semi-conductor network comprises a semiconductor wafer which contains a field effect transistor and a junction transistor, the source, drain, gate, base-emitter junction and collectorbase junction are all adjacent one major face of the wafer. The description is all included in that given in Specification 983,252.
GB23277/64A 1960-05-02 1961-05-01 Semiconductor networks including field-effect and junction transistors Expired GB983275A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US2612660A 1960-05-02 1960-05-02
US2613460A 1960-05-02 1960-05-02
US26133A US3130378A (en) 1960-05-02 1960-05-02 Relaxation oscillator utilizing field-effect device
US26090A US3112411A (en) 1960-05-02 1960-05-02 Ring counter utilizing bipolar field-effect devices

Publications (1)

Publication Number Publication Date
GB983275A true GB983275A (en) 1965-02-17

Family

ID=27487477

Family Applications (2)

Application Number Title Priority Date Filing Date
GB23277/64A Expired GB983275A (en) 1960-05-02 1961-05-01 Semiconductor networks including field-effect and junction transistors
GB15723/61A Expired GB983252A (en) 1960-05-02 1961-05-01 Electrical circuits

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB15723/61A Expired GB983252A (en) 1960-05-02 1961-05-01 Electrical circuits

Country Status (7)

Country Link
BE (1) BE603266A (en)
CH (1) CH397873A (en)
DE (2) DE1242690B (en)
FR (1) FR1302417A (en)
GB (2) GB983275A (en)
MY (2) MY6900295A (en)
NL (1) NL264274A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL293447A (en) * 1962-05-31
NL128995C (en) * 1962-08-03
JPS5370679A (en) * 1976-12-06 1978-06-23 Nippon Gakki Seizo Kk Transistor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL83838C (en) * 1952-12-01 1957-01-15
GB807582A (en) * 1954-12-27 1959-01-21 Clevite Corp High power junction transistor
US2998534A (en) * 1958-09-04 1961-08-29 Clevite Corp Symmetrical junction transistor device and circuit
US2967793A (en) * 1959-02-24 1961-01-10 Westinghouse Electric Corp Semiconductor devices with bi-polar injection characteristics

Also Published As

Publication number Publication date
GB983252A (en) 1965-02-17
MY6900295A (en) 1969-12-31
FR1302417A (en) 1962-08-31
MY6900298A (en) 1969-12-31
BE603266A (en) 1961-11-03
DE1242690B (en) 1967-06-22
DE1614797A1 (en) 1970-09-24
NL264274A (en) 1900-01-01
DE1614797B2 (en) 1976-08-12
CH397873A (en) 1965-08-31

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