GB983275A - Semiconductor networks including field-effect and junction transistors - Google Patents
Semiconductor networks including field-effect and junction transistorsInfo
- Publication number
- GB983275A GB983275A GB23277/64A GB2327764A GB983275A GB 983275 A GB983275 A GB 983275A GB 23277/64 A GB23277/64 A GB 23277/64A GB 2327764 A GB2327764 A GB 2327764A GB 983275 A GB983275 A GB 983275A
- Authority
- GB
- United Kingdom
- Prior art keywords
- effect
- networks including
- junction transistors
- including field
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 230000005669 field effect Effects 0.000 title abstract 2
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
- H03K23/002—Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/354—Astable circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
983,275. Transistors; semi-conductor devices. TEXAS INSTRUMENTS Inc. May 1, 1961 [May 2, 1960], No. 23277/64. Divided out of 983,252. Heading H1K. A semi-conductor network comprises a semiconductor wafer which contains a field effect transistor and a junction transistor, the source, drain, gate, base-emitter junction and collectorbase junction are all adjacent one major face of the wafer. The description is all included in that given in Specification 983,252.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2612660A | 1960-05-02 | 1960-05-02 | |
US2613460A | 1960-05-02 | 1960-05-02 | |
US26090A US3112411A (en) | 1960-05-02 | 1960-05-02 | Ring counter utilizing bipolar field-effect devices |
US26133A US3130378A (en) | 1960-05-02 | 1960-05-02 | Relaxation oscillator utilizing field-effect device |
Publications (1)
Publication Number | Publication Date |
---|---|
GB983275A true GB983275A (en) | 1965-02-17 |
Family
ID=27487477
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB23277/64A Expired GB983275A (en) | 1960-05-02 | 1961-05-01 | Semiconductor networks including field-effect and junction transistors |
GB15723/61A Expired GB983252A (en) | 1960-05-02 | 1961-05-01 | Electrical circuits |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB15723/61A Expired GB983252A (en) | 1960-05-02 | 1961-05-01 | Electrical circuits |
Country Status (7)
Country | Link |
---|---|
BE (1) | BE603266A (en) |
CH (1) | CH397873A (en) |
DE (2) | DE1242690B (en) |
FR (1) | FR1302417A (en) |
GB (2) | GB983275A (en) |
MY (2) | MY6900295A (en) |
NL (1) | NL264274A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL293447A (en) * | 1962-05-31 | |||
NL296208A (en) * | 1962-08-03 | |||
JPS5370679A (en) * | 1976-12-06 | 1978-06-23 | Nippon Gakki Seizo Kk | Transistor |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL83838C (en) * | 1952-12-01 | 1957-01-15 | ||
GB807582A (en) * | 1954-12-27 | 1959-01-21 | Clevite Corp | High power junction transistor |
US2998534A (en) * | 1958-09-04 | 1961-08-29 | Clevite Corp | Symmetrical junction transistor device and circuit |
US2967793A (en) * | 1959-02-24 | 1961-01-10 | Westinghouse Electric Corp | Semiconductor devices with bi-polar injection characteristics |
-
0
- NL NL264274D patent/NL264274A/xx unknown
-
1961
- 1961-05-01 GB GB23277/64A patent/GB983275A/en not_active Expired
- 1961-05-01 GB GB15723/61A patent/GB983252A/en not_active Expired
- 1961-05-02 BE BE603266A patent/BE603266A/en unknown
- 1961-05-02 DE DET20103A patent/DE1242690B/en active Pending
- 1961-05-02 CH CH511461A patent/CH397873A/en unknown
- 1961-05-02 DE DE1961T0033564 patent/DE1614797B2/en active Granted
- 1961-05-02 FR FR860525A patent/FR1302417A/en not_active Expired
-
1969
- 1969-12-31 MY MY1969295A patent/MY6900295A/en unknown
- 1969-12-31 MY MY1969298A patent/MY6900298A/en unknown
Also Published As
Publication number | Publication date |
---|---|
NL264274A (en) | 1900-01-01 |
DE1614797A1 (en) | 1970-09-24 |
FR1302417A (en) | 1962-08-31 |
DE1614797B2 (en) | 1976-08-12 |
MY6900298A (en) | 1969-12-31 |
BE603266A (en) | 1961-11-03 |
DE1242690B (en) | 1967-06-22 |
CH397873A (en) | 1965-08-31 |
GB983252A (en) | 1965-02-17 |
MY6900295A (en) | 1969-12-31 |
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