GB1370739A - Insulated gate field effect transistor - Google Patents

Insulated gate field effect transistor

Info

Publication number
GB1370739A
GB1370739A GB686672A GB686672A GB1370739A GB 1370739 A GB1370739 A GB 1370739A GB 686672 A GB686672 A GB 686672A GB 686672 A GB686672 A GB 686672A GB 1370739 A GB1370739 A GB 1370739A
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistor
insulated gate
gate field
incorpoated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB686672A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1370739A publication Critical patent/GB1370739A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors

Abstract

1370739 Semiconductor devices INTERNATIONAL BUSINESS MACHINES CORP 15 Feb 1972 [16 March 1971] 6866/72 Heading H1K A Si IGFET has arsenic-diffused source and drain regions 2, 3 less than 40Á inches (about 1 micron) deep. Bipolar transistors may also be incorpoated into the same semiconductor body. Details of the diffusion process, the impurity profile obtained thereby and the profiles obtained by prior art phosphorus diffusions are described.
GB686672A 1971-03-16 1972-02-15 Insulated gate field effect transistor Expired GB1370739A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12488871A 1971-03-16 1971-03-16

Publications (1)

Publication Number Publication Date
GB1370739A true GB1370739A (en) 1974-10-16

Family

ID=22417285

Family Applications (1)

Application Number Title Priority Date Filing Date
GB686672A Expired GB1370739A (en) 1971-03-16 1972-02-15 Insulated gate field effect transistor

Country Status (3)

Country Link
DE (1) DE2212274A1 (en)
FR (1) FR2130094B1 (en)
GB (1) GB1370739A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0123936A1 (en) * 1983-04-01 1984-11-07 Hitachi, Ltd. Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1518245A (en) * 1966-04-07 1968-03-22 Philips Nv Field effect transistors and their manufacturing process
US3514845A (en) * 1968-08-16 1970-06-02 Raytheon Co Method of making integrated circuits with complementary elements

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0123936A1 (en) * 1983-04-01 1984-11-07 Hitachi, Ltd. Semiconductor device
US4769686A (en) * 1983-04-01 1988-09-06 Hitachi, Ltd. Semiconductor device

Also Published As

Publication number Publication date
FR2130094B1 (en) 1977-04-01
DE2212274A1 (en) 1972-09-21
FR2130094A1 (en) 1972-11-03

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee