GB1287473A - A method of producing a planar transistor - Google Patents

A method of producing a planar transistor

Info

Publication number
GB1287473A
GB1287473A GB58163/69A GB5816369A GB1287473A GB 1287473 A GB1287473 A GB 1287473A GB 58163/69 A GB58163/69 A GB 58163/69A GB 5816369 A GB5816369 A GB 5816369A GB 1287473 A GB1287473 A GB 1287473A
Authority
GB
United Kingdom
Prior art keywords
region
base
emitter
contact
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB58163/69A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Publication of GB1287473A publication Critical patent/GB1287473A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

1287473 Planar transistors TELEFUNKEN PATENTVERWERTUNGS GmbH 27 Nov 1969 [27 Nov 1968] 58163/69 Heading H1K In the manufacture of a planar transistor both the emitter region 7 and the active base region 6 are formed by diffusion through the same mask aperture. The base contact 9 is provided on a base contact region 4 which is formed through an aperture adjacent that mentioned. Lateral diffusion ensures that the two parts of the base region meet or overlap. The two apertures are also used for the provision of the base 9 and emitter 8 contacts. The contact region 4 may be formed before, simultaneously with, or after the formation of the active base region 6 and both may be formed before or after the formation of the emitter region 7. The contact region is generally made deeper than the active base-the prior formation of the emitter region enables this result to be achieved even if both parts of the base region are formed simultaneously. If the two parts of the base region are first formed by separate diffusions, the base contact aperture is left open during the later emitter diffusion, it having been ensured that sufficiently heavy base doping is used in the contact region. In contrast to the figure shown, the base contact region may extend entirely around the active base region. Completion of the device may involve removal of the diffusion mask and the provision of new passivation. Details are given of further structural and processing variants.
GB58163/69A 1968-11-27 1969-11-27 A method of producing a planar transistor Expired GB1287473A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681811136 DE1811136A1 (en) 1968-11-27 1968-11-27 Method for manufacturing a planar transistor

Publications (1)

Publication Number Publication Date
GB1287473A true GB1287473A (en) 1972-08-31

Family

ID=5714435

Family Applications (1)

Application Number Title Priority Date Filing Date
GB58163/69A Expired GB1287473A (en) 1968-11-27 1969-11-27 A method of producing a planar transistor

Country Status (4)

Country Link
US (1) US3698077A (en)
DE (1) DE1811136A1 (en)
FR (1) FR2024331B3 (en)
GB (1) GB1287473A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1357515A (en) * 1972-03-10 1974-06-26 Matsushita Electronics Corp Method for manufacturing an mos integrated circuit
US3910804A (en) * 1973-07-02 1975-10-07 Ampex Manufacturing method for self-aligned mos transistor
US4079505A (en) * 1974-03-14 1978-03-21 Fujitsu Limited Method for manufacturing a transistor
NL7507733A (en) * 1975-06-30 1977-01-03 Philips Nv SEMI-GUIDE DEVICE.
US4125933A (en) * 1976-07-08 1978-11-21 Burroughs Corporation IGFET Integrated circuit memory cell
US5010034A (en) * 1989-03-07 1991-04-23 National Semiconductor Corporation CMOS and bipolar fabrication process using selective epitaxial growth scalable to below 0.5 micron
JPH08195399A (en) * 1994-09-22 1996-07-30 Texas Instr Inc <Ti> Insulated vertical pnp transistor dispensing with embedded layer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3305913A (en) * 1964-09-11 1967-02-28 Northern Electric Co Method for making a semiconductor device by diffusing impurities through spaced-apart holes in a non-conducting coating to form an overlapped diffused region by means oftransverse diffusion underneath the coating
US3477886A (en) * 1964-12-07 1969-11-11 Motorola Inc Controlled diffusions in semiconductive materials
US3397449A (en) * 1965-07-14 1968-08-20 Hughes Aircraft Co Making p-nu junction under glass
JPS556287B1 (en) * 1966-04-27 1980-02-15
JPS5139075B1 (en) * 1966-09-22 1976-10-26

Also Published As

Publication number Publication date
FR2024331A7 (en) 1970-08-28
DE1811136A1 (en) 1970-11-05
FR2024331B3 (en) 1973-03-16
US3698077A (en) 1972-10-17

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee