DE1242690B - Circuit arrangement with a unipolar and a bipolar transistor - Google Patents

Description

FEDERAL REPUBLIC OF GERMANY

GERMAN

PATENT OFFICE

EDITORIAL

Int. Cl .:

H03k

German class: 21 al -36/18

Number: 1242 690

File number: T 20103 VIII a / 21 al

Filing date: May 2, 1961

Open date: June 22, 1967

The invention relates to a switching arrangement with a unipolar and a bipolar Transistor in which one ohmic electrode of the unipolar transistor is electrically connected to the base electrode of the bipolar transistor is connected.

It is known that the unipolar or field effect transistors have compared to the bipolar transistors the advantage of a much higher input impedance.

In a known switching arrangement of the type specified above, an input voltage is between the emitter electrode of the bipolar transistor and the second ohmic electrode of the unipolar Transistor applied. The second ohmic electrode forms the common electrode of the circuit, with which also the collector electrode of the bipolar transistor via a battery and a resistor connected is. The whole arrangement is used in the manner of an ordinary transistor, the The non-ohmic electrode of the unipolar transistor serves to increase the base resistance of the bipolar transistor to change. A gain control of the bipolar transistor is thus possible. if for example a second signal voltage between the second ohmic electrode and the non-ohmic electrode Electrode is applied, the circuit works as a modulator.

In contrast, the invention is based on the object of providing a switching arrangement of the type specified at the outset Kind so train that they maintain the characteristic of the unipolar transistor high input impedance in part of their work area the behavior of a negative Shows resistance and thus to the formation of current switches, bistable circuits, logic circuits, Vibration generators or the like. Can be used.

According to the invention, this is achieved in that the non-ohmic electrode of the unipolar transistor is electrically connected to the collector electrode of the bipolar transistor that the second ohmic electrode of the unipolar transistor is used as an input and that the collector electrode and the emitter electrode of the bipolar transistor as an output and as voltage supply electrodes are used.

The switching arrangement designed according to the invention has a section in its collector current-collector voltage characteristic curve in which the collector current falls when the collector voltage rises. This corresponds to the behavior of a negative resistance. The behavior of the switching arrangement can be changed by that of the second ohmic electrode
and a bipolar transistor

Applicant:

Texas Instruments Incorporated,

Dallas, Tex. (V. St. A.)

Representative:

Dipl.-Ing. E. Prince

and Dr. G. Hauser, patent attorneys,

Munich-Pasing, Ernsbergerstr. 19th

Named as inventor:

Arthur Dunn Evans, Robert Allan Meadows,
Charles Robert Cook jun., Gerald Luecke,
Richardson, Tex. (V. St. A.)

Claimed priority:
V. St. ν. America May 2, 1960 (26 090,
26 126, 26 133, 26 134)

guided input signal can be controlled. This results in a very wide range of possible applications in all types of circuits where a negative resistance or bistable behavior is required is.

A major advantage of the arrangement according to the invention is that it has a high input impedance because the input signal is fed to the unipolar transistor. This is special favorable where several further switching arrangements are common to the output of a switching arrangement are connected because the high input impedance reduces the control power required. Another advantage of the arrangement according to the invention is that the adaptation to different Applications with very little additional circuitry is possible and that the required resistance and capacitance values are relatively small. The switching arrangement is therefore particularly suitable for microminiaturized integrated semiconductor circuit arrangements, where the various circuit elements are in different sections of a semiconductor chip are formed. As a result of the

709 607/478

3 4

multiple circuit, it is easily possible for a The width of the web 15 between the pn transitions

circuitry 13 and 16 required for the properties of the field

processing elements in a semiconductor wafer to effect transistor important. This width is made by

put in order. the diffusion depth of the layer 12 and the section

As is well known, it is controlled and determined in such integrated semiconductors. With this arrangement, conductive circuits difficult to generate high resistance values, the conductivity in the p-bar 15 between the and capacitance values. Since the inven- source 17 and the outlet 18 are controlled by the voltage applied to the switching arrangement according to the invention, only relatively control electrode 19,
low resistance and capacitance values required- F i g. FIG. 2 a shows an arrangement in which a field, the formation of the various io effect transistor of the in FIG. 1 with circuit arrangements in the form of integrated half-a normal bipolar transistor in a conductor circuit is significantly facilitated or combined in one-single semiconductor body. The arranging cases even made possible in the first place. tion of Fig. 2 a contains like that in FIG. 1 shown

The invention is based on the drawing with unipolar field effect transistor from a block 11

explained for the sake of play. It shows 15 η material on which there is a diffused p-layer

F i g. 1 a unipolar field effect transistor, 12 is located. A section 14 is in the layer 12

2a shows a switching arrangement made of a unipolar from η material diffused in. The η material of the

Ren field effect transistor and a bipolar surface block 11 forms a pn junction 13 with the

chentransistor, p-layer 12. The section 14 is made of η material

2b shows a plan view of a preferred configuration 20, likewise a pn junction 16 with the p-layer 12.

Guide form of the switching arrangement of Fig. 2a, As in the field effect transistor of Fig. 1 protrudes

Fi g. 2 c shows a section through the arrangement of the section 14 so deep into the layer 12 that

Fi g. 2b according to the line Ic-Ic, this is divided into two main parts XIa ₁ 12b , the

3 shows the equivalent circuit of the switching arrangement via a narrow web 15 made of p-material.

of Fig. 2a, 2b, 2c, 25 are connected to the other. On the main part 12a of the

F i g. 4 is a characteristic diagram of the switching arrangement layer 12, an ohmic contact is attached, the

tion of Fig. 2 and 3, the source 17 of the field effect transistor represents.

F i g. 5 a bistable circuit for explaining ohmic contacts are also at section 14

the switching properties of the switching arrangement, and at the block 11 on the layer 12 opposite

Fig. 6 is a schematic circuit diagram of an overlying page attached below 30; these contacts are

Use of several switching arrangements connected to one another in such a way that the non-ohmic

th ring counter, electrode 19, i.e. the control electrode of the field

7 represent a plan view of an integrated half-effect transistor. On the other hand, the

Conductor circuit, which is a single stage of the ring arrangement of Fig. 2a, the ohmic electrode 18

counter of F i g. 6 represents 35 of FIG. 1.

F i g. 8 shows a section through the arrangement of FIG. 2 a is also a

F i g. 7 along the line 8-8 and diffused layer 20 of η material in the ab-

9 shows a circuit formed using the switchgear section 126 of the p-layer 12. This layer

voltage built-up oscillating oscillator circuit. 20 made of η material does not quite protrude up to the

The in F i g. 1 shown unipolar transistor or 40 gang 13 down into the p-layer 12. The Ab field effect transistor consists of a block 11 section 20 forms a pn junction 22 with the n-semiconductor material on which a diffused p-material of layer 12. The pn junctions 22 and layer 12 are made of p-material, whereby a pn 13 together result in the effect of a bipolar junction 13 between the layer 12 and the junction transistor. A block 11 is formed on section 20. In the middle of the p-layer 45 ohmic contact is attached, which represents the emitter electrode 12, a diffused section 14 made of η material trode 21 of the bipolar transistor. The formed, which protrudes down into the p-layer 12 and the base of the bipolar transistor consists of one of these divided into two main parts 12 a and 12 b , piece with the section 12 b, which the outflow of which together by a narrow, conductive Field effect transistor represents, so that these two webs 15 are connected from p-material, which on the 50 zones in the interior of the semiconductor body are directly connected on one side to the η-material of the block 11 and conductively with one another. Likewise, the collector zone of the birial formed by the layer 11 on the other side is adjacent to the section 14 made of η-Mate. The section 14 made of η material forms the polar transistor in a directly conductive manner with the non-one pn junction 16 with the p-layer 12. An ohmic 55 is connected to the ohmic electrode 19 of the field-effect transistor, a main part 12 a of the p-layer 12 .

shear connection 17 attached. This connection in Fig.2b and 2c is a special spatial one

represents the source electrode of the field effect transistor forming the arrangement of Fig. 2a,

is. Another ohmic connection 18 is where that has proven to be particularly advantageous and

other main part 12 b of the p-layer 12 attached, which represents the preferred embodiment. It should be in

whereby the drain electrode of the field effect tran- 60 following a special method of manufacture

sistors is formed. Ohmic connections 19 are to be described in this arrangement. A plate

also on the section 14 and on the block 11 110 made of silicon with a specific resistance

on the side opposite the layer 12 at 7.5 ohm · cm serves as the starting material. Every

brought and connected to one another in an electrically conductive manner. Side of the plate is lapped so that a thickness

the; as a result of the pn junctions 13 and 16, 65 of the plate of 0.25 mm is reached. The upper

These connections with respect to the layer 12, a non-side of the platelet, are then optically polished. To

ohmic electrode, and they together form the polishing of the wafer in an open tube

Control electrode of the field effect transistor. introduced, and steam at a temperature of

5 6

about 1200 ° C is passed over the plate. By F i g. 3 is the source of the field effect transistor 23

this process is provided with the reference numeral 26 on all a thin oxide film, the control elec-

Surfaces of the platelet formed. The plate trode with the reference numeral 28 and the drain with

is then a diffusion from a gallium trioxide the reference numeral 27. The drain 27 of the unipolar source in the presence of dry oxygen 5 field effect transistor 23 is directly connected to the base

subjected, whereby a layer of p-material of the junction transistor 25 is connected. The tax-

of about 18 μ thickness in the surface of the plate electrode 28 of the field effect transistor 23 is direct

is formed. Applying the light print to the collector of the flat transistor 25

When driving, the oxide film is then closed in places. The emitter electrode of the bipolar potion-concentric circular sections of the upper io sistor 25 is led to an external terminal,

surface of the plate removed. After setting the collector voltage-collector current characteristic

After removing the oxide film, the platelet is a line diagram of the arrangement of FIG. 2 or

then subjected to a second diffusion cycle, the equivalent circuit of which is shown in FIG. 3 is in FIG. 4 dar-

placed by the phosphorus to a depth of about 7.5 μ. This characteristic diagram applies to a from a phosphorus pentoxide source in the presence of 15 constant source voltage of 1.7 volts. The characteristic

is diffused in by dry nitrogen. The line consists of a section 31 positive resistance

resulting thin layer of p-material is standing and from a section 32 negative resistance

then from the bottom and sides of the stand.

Plate removed, so that a layer 112 of the negative resistance section of the characteristic curve p-material is back on the surface of the plate, if the bipolar transistor 25 does not remain, which has a pn junction 126 with the η-Mate is in saturation. With an increase the collective of the platelet forms. The second diffusion bias voltage also increases the chip supplied to the control electrode of the unipolar field effect transistor 23 using the phosphorus pentoxide source, which causes the formation of concentric ring-shaped rings, whereby the outflow current of the field effect transsections 114 and 116 made of η material in the transistor 23 is reduced will. As a result, the base current flowing to the layer 112, which pn junctions with the p-mate junction transistor 25 form, is minimal of the layer 112 . Ohmic contacts 120 changed, and supplies this reduction of the base current and 122 are at the portions 116 and 114 to a decrease of the collector current. So if appropriate. An ohmic contact 124 is applied at which the collector voltage increases, the collector layer 112 is applied at the point which represents the mean current of the transistor 25, whereby the negative point of the circular sections 114 and 116 resistance section of the characteristic curve is formed . An ohmic contact 118 is attached to the positive resistance portion of the characteristic curve bottom of the chip 110 . The contacts are present when the flat transistor 25 is saturated. 118, 120, 122 and 124 are made of aluminum and. At low values of the collector voltage, the discharge current of the field effect transistor 23 is large and forms through vapor deposition and sintering processes. The platelet is then etched with an etch-resistant material, such as wax, masked the base current of the transistor 25 and is etched enough to saturate the transistor 25 with an acid solution so that the in FIG. 2 c act. As the collector voltage increases, the shape shown is obtained. The finished arrangement reduces the discharge current of the field effect transistor is the equivalent of the arrangement of Fig. 2a 40 sistor 23. However, since the transistor 25 is in saturation, this has no effect on the arrangement of Figs 2c corresponds to the collector current of transistor 25. Therefore, the contacts 124 and 120 of the source electrode, the collector current, increases as the collector frame 17 or the emitter electrode 21 of the arrangement increases, so that the positive resistance of FIG. 2a. The contacts 122 and 118 of the 45 section 31 of the characteristic curve shown in Fig. 4 of the arrangement of Figs. 2b and 2c will hold together. The point at which the characteristic curve of connected and then the electrode 19 of the positive resistance to the negative disorder of Fig. 2 a, which goes over to the control station, is the point at which the transistor electrode of the unipolar transistor and also with 25 comes out of saturation, connected to the collector of the bipolar transistor 50 from F i g. 4 it can be seen that the arrangement is biist. The sections 114 and 116 of the assembly have stable properties. The one load fig. 2b and 2c correspond to the sections 14 resistance of 1500 ohms corresponding line 34 and 20 of the arrangement of FIG. 2a. that runs from the point 5 mA / 0 V to the point 0 mA / In some cases it can be advantageous to run from 7.5 V, for example crossing the characteristic curve sections 114 and 116 at different depths once three times. A crossing point lies on the positive diffuse or with different Störstoffkonzen- resistance section 31 of the characteristic curve to equip another trations. In these cases it is necessary to form these sections through different diffuse stand section 32, and the third point of intersection is sion cycles. In the preferred embodiment, a current of approximate shape is on the cut-off line, but both sections 114 and 60 are 0 mA. There are thus two stable operating points upstream 116 by a single diffusion cycle at the same handen, one of which produced a time on the positive. Resistance section is where the transistor The circuit of F i g. 3 is the equivalent circuit 25 is in saturation, while the other is on the Abder arrangement of Fig. 2a or Fig. 2b and switching line on which the field effect transistor 23c. The equivalent circuit contains a unipolar 65 blocked and the flat transistor 25 is de-energized. Field effect transistor 23 and a bipolar area F i g. 5 explains, by way of example, the switching property transistor 25 in the preferred embodiment of the arrangement. In Fig. 5 denotes the approximate form of the invention is an npn transistor. In general, the switching arrangement is shown in reference numeral 35

7 8

the unipolar field effect transistor and the bi-collector and the base of the junction transistor 2i

polar junction transistor, which is about OVoIt for better convenience. Hence the tension is between

Understanding of the mode of operation through the equivalent circuit of the source and the outflow of the field effect transit

from F i g. 3 with the unipolar field effect transistor stors 23 approximately equal to the voltage between de: 23 and the surface transistor 25 is shown. In 5 source and the control electrode, and the field effect

F i g. 5 is the emitter electrode 21 of the switching arrangement transistor 23 is in its saturation

voltage 35 placed on ground, and the collector electrode area. Thus, the current can be returned from the source

19 is smaller than seir through a resistor 36 of 300 ohms to the drain of the field effect transistor

positive terminal of a voltage source connected - limit value. When the junction transistor 25 of the sen. The source electrode 17 of the switching arrangement xo limit value of the discharge current as the base current requires

35 is one of the positive terminals changed so that it reaches saturation, it will never-

Lent voltage supplying voltage source 38 is saturated via maize, and the field effect transistor 23 is effective

a resistor 40 of 2 kOhm and thus as a base current limiter, the surface transistor

resistor 42 of 51 ohms lying in series is kept out of saturation. Of course it's the weak ones bound. The negative terminal of the voltage source 15 amplifying junction transistors that are not in the

38 is due to mass. A terminal 44 that would bring with saturation. This weakly reinforced

The connection point between the resistors 40 kenden arrangements are when switching in the

and 42 is connected, the input represents the switching fully energized state slowest because

There is less feedback gain when the circuit is in the state 20, but they will because of the smaller storage time

in which the field effect transistor is switched off and switched off faster.

the surface transistor are de-energized, increases when the from the i? C time constant as, the rise time of the circuit is correct. The storage depends, which is determined by the input resistance 40 and tion and the fall time of the circuit in both the capacitance between the source 17 and ground almost exclusively on the storage and which is correct. When the voltage at the source 17 is on, the drop time of the junction transistor 25 decreases.
begins to climb, the tension between the Aus F i g. 2 a it can be seen that a bridging control electrode and the source of the field effect transient 30 kung the control electrode 14 with the collector transistor 23 from. When this voltage connects between the trode 19. Although this circuit is particularly advanced in the case of the control electrode and the source up to a value of the aforementioned embodiments which is partially below the cut-off voltage of the, but if a different form of the connection field effect transistor 23 results, the field formation begins to have greater versatility in other application effect transistor 23 to carry current. As soon as the 35 fertilize. Namely, when the bridging under-current conduction of the field effect transistor begins, is broken and a resistor is inserted in series, the base of the junction transistor 25 is supplied with a current, the switching of the one stable. The state flowing in the flat transistor 25 in the other with a relatively energy base current causes the flow of a collector-weak pulses are achieved, which are fed to the control current in the flat transistor 25 and the collector electrode 14,
gate voltage of the flat transistor 25 falls. This has F i g. 6 shows how the combined switching arrangement causes the voltage at the control electrode to decrease from one field effect transistor and one of the field effect transistor 23 and more bipolar transistor to form a ring counter current flowing through the field effect transistor 23. be switched. In Fig. 6 are this switching arrangement. This effect is self-reinforcing, and the field effect transistor again generally with the reference numeral 35 and the area transistor are designated and, for a better understanding, by the equivalent circuit of FIG. 3 shown. In this switches. When the field effect transistor is the base case again the drain of the unipolar field effect of the junction transistor supplies enough current, transistor 23 is brought into saturation directly with the base of the junction transistor, the rectifying transistor 25 is connected, and the control electrode of the junction between the control electrode and The unipolar field effect transistor 23 is directly connected to the source of the field effect transistor 23 in the collector of the junction transistor 25. Forward biased, and the voltage at An at the connection between the control electrode of the source 17 is held at the voltage of the collector of the field effect transistor 23 and the collector of the 19. 55 Area transistor 25 is the collector electrode 19 The arrangement remains fully current-carrying until that of the switching arrangement is connected, with the source voltage at the source 17 back to a value of the field effect transistor 23, the source electrode is reduced below the voltage at the electrode 17 connected, and is connected to the emitter of the surface lector 19, whereupon the switching off of the field transistor 25, the emitter electrode 21 is applied transistor 23 begins. Then another 60 closed.

The ring counter contains any number of switching to the non-energized state. In the embodiment shown, if the junction transistor is faster than the form, only four stages 41, 42, for simplicity, Field effect transistor 23 works. Otherwise 43, 44 is shown. Each stage of the ring counter contains Field effect transistor de-energized, while the 65 has a switching arrangement 35, whose collector electrode Flat transistor is still in the memory state. 19 through a resistor 47 of 300 ohms to a It should be noted that at the saturation of the voltage source of + 10VoIt is connected, Surface transistor 25, the voltage between which all four stages are common and at which

Terminal 49 is on. In each stage of the ring counter is the consequence that the source electrode 17 of the stage the voltage supplied to the emitter electrode 21 via a resistor 51 44 is still less than + 6VoIt of 200 ohms connected to ground. In each stage is, and the voltage between the control electrode of the ring counter connects a capacitor 53 and the source of the field effect transistor 23 in the Source electrode 17 of switching arrangement 35 with 5 step 44 is even greater than + 4VoIt. Hence will an input 55, which is common to all four stages and stage 44 in the switched off stable Zuist. The input 55 is held by a resistor 57. Since the stage 41 is switched on, is connected to ground by 51 ohms. The collector- the voltage at the emitter electrode 21 of this stage Electrode 19 is considerably greater than 0 volts in each stage across a resistor, and thus the 59 of 1.5 kOhms fed to the source electrode 17 of the source electrode 17 of the stage 42 connected to the previous stage. So connects voltage greater than + 6 volts. The values of the reunions Resistor 59, the source electrode 17 of the stage stands 59 and 61 are chosen so that the 41 with the collector electrode 19 of the step 42; a source electrode 17 applied voltage to the span resistance 59 connects the source electrode 17 of the voltage between the control electrode and the source Step 42 with the collector electrode 19 of step 43; 15 of the field effect transistor 23 in the stage 42 is not a resistor 59 connects the source electrode 17 to make it less than the cutoff voltage. Hence will the stage 43 blocked with the collector electrode 19 of the stage of the field effect transistor 23, and the stage 44, and a resistor 59 connects the source electrode 42 is trode in the switched-off stable state 17 hold the step 44 with the collector electrode 19. It should be noted, however, that the tension of stage 41. In the same way, a counter connects between the control electrode and the source of the stood 61 of 2.2 kOhni the source electrode 17 field effect transistor 23 in the stage 42 smaller than each stage with the emitter electrode 21 of the previous the voltage between the control electrode and the going level. A resistor 61 thus connects the source of the field effect transistor 23 in the stages 43 Source electrode 17 of stage 44 with emitter and 44 is. The values of resistors 59 and 61 electrode 21 of stage 43, a resistor 61 are selected so that the voltage between the binds the source electrode 17 of the stage 43 to the control electrode and the source of the field effect tran-emitter electrode 21 of stage 42, a resistor 61 sistors 23 of stage 42 just larger than the Abverbindet is the source electrode 17 of the stage 42 with switching voltage. The reasons for this will be explained later the emitter electrode 21 of the stage 41, and a re-explained. Since the field effect transistor 23 of the stage Stand 61 connects the source electrode 17 of the stage 30 41 is energized, is that of the source electrode 17 41 with the emitter electrode 21 of the stage 44. the voltage applied to this stage is considerably smaller

Each of the levels 41, 42, 43 and 44 has two stable than + 6VoIt, because a large part of the through the Conditions. A steady state exists when so- Resistance 59 flowing current enters the source probably the bipolar transistor 25 as well as the field of the field effect transistor 23 a. As previously mentioned effect transistor are live. At this point there is a large voltage drop across the resistor the stage is said to be switched on. In stood 47, because stage 41 is live. This the other stable state is the field effect voltage drop is sufficient to keep the voltage between the transistor 23 is switched off, and therefore the area see of the collector electrode 19 and the source transistor 25 de-energized. In this stable state electrode 17 is considerably smaller than at this stage the stage is designated as switched off. 40 the switch-off voltage of the field effect transistor 23

It should be assumed by way of example that to do. The field effect transistor 23 is therefore the stage 41 is switched on and that the stages 42, kept in the current-carrying state, and the stage 43 and 44 are switched off. In the switched-off 41 there is a step in the switched-on stable state are the collector electrodes 19 essentially hold.

borrowed to +10 volts, and the emitters are in the 45. When the terminal 55 an input pulse is essential to 0 volts. The voltage at the source is carried, it passes through the capacitors 53 to the source electrodes 17 in each of the switched-off stages, the source electrodes 17 of all stages. This results in 42, 43 and 44 being the voltage dividing action that determines the voltage at the source electrode of resistors 61 and 59. Thus, 17 is raised in each stage and the voltage between the voltage at each source electrode 17 in Fig. 50, the control electrode and the source is ^{decreased in each switched-off stage e} / io of the voltage sub-stage. Since stage 41 has already been switched between the collector of the previous stage, this has no effect on this stage and the emitter of the following stage. At-stage. The voltages at the source electrodes 17, for example, the emitter 21 of the stage 42 is connected to that in the stages 43 and 44 are so low that the on-voltage is 0 volts, and the voltage at the collector 19 55 input pulse the potential at the source electrodes of the stage 44 is +10 volts. Thus the span supplied to the 17 in these stages 43 and 44 does not raise the source electrode 17 sufficiently to the stage 43 - around the voltage between the control electrode and voltage ⁶ Ao of 10 volts or + 6VoIt. Since the span steps supplied to the source of the field effect transistors 23 in this collector electrode 19 of the stage 43 are below the cut-off voltage. Danung + 10VoIt is between the control 60 ago the input pulses affect the stages 43 electrode and the source of the field effect transistor and 44 do not. As previously explained, this is a voltage of + 4VoIt, which is sufficient to keep potential at the source electrode 17 in the stage 42 of this field effect transistor blocked, but precisely below the switch-off voltage, and through the stage 43 in the switched-off stable when the input pulse is held via the capacitor 53 state. Since the stage 41 is switched on 65 to the source electrode 17 of this stage is raised, the voltage at the collector electrode 19 is the voltage at the source electrode 17 of this stage 41 due to the voltage drop at the resistor stage sufficient that the voltage was between 47 considerably less than +10 volts. This has the control electrode and the source of the field effect

11 12

Transistor 23 is brought in the stage 42 under the Absehalt- connection with the collector of the switched-on voltage, so that the field effect Tran- stage begins to lead through the resistor 59 of the switched on sistor 23 in this stage current. He level is at a lower voltage,
then lets a current into the base of the surface F i g. 7 and 8 show the execution of the ring counter transistor 25 of the stage 42 enter, so that this 5 lers as an integrated semiconductor device. For each current to lead begins. A current stage of the ring counter now begins to flow through the resistor 47 in the stage 42, an integrated conductor arrangement is provided. Since all stages of the ring and this causes a drop in the voltage at the counter are the same, all integrated halves of the collector electrode 19 are also in stage 42. These conductor arrangements for the individual stages are identical to voltage drops at collector electrode 19. Fig. 7 and 8 show the integrated half-reduces the voltage between the control electrode conductor arrangement for one of the stages of the ring counter, and the source of the field effect transistor 23 in the- This semiconductor arrangement contains an elongated water stage even more, so that more current through the block 71 made of η material, on which the field effect transistor 23 flows by diffusion, which in turn is formed as a layer made of p material. At the greater current flow to the base of transistor 23 15 end of the elongated block is a slot 73 through. The effect is self-reinforcing, cut the p-layer, whereby it is divided into two and the field effect transistor 23 and the area parts 75 and 77, of which the transistor part 25 are fully current-carrying. In this way 75 along the elongated block 71, the stage 42 is switched on for a very long time. than the part is 77. A section 79 made of n-material

The voltage drop across the collector electrode 19 ao is due to diffusion in the p-layer at one end is formed through resistor 59 to the source electrode of member 75. A second section 81 from 17 transferred in stage 42. When this stress η material is close by diffusion in the p-layer falls at the source electrode 17 in the step 42, the section 79 rises, being a short distance the voltage is left between the control electrode and that of p-material, which is the two AbSource of the field effect transistor 23 in the stage 41 «5 cuts 79 and 81 connects. Sections 79 and at. This rise in voltage reduces the current, 81 are diffused to a depth that is not quite up which flows through this field effect transistor, including the pn junction between the η material of the through which through the junction transistor 25 of the stage blocks 71 and the p-material of the part 75 extends. 41 current flowing is reduced. This has a vapor-deposited aluminum contacts 83, 85 are on Increase in the potential at the collector electrode 19 30 the part 77 of the p-layer on both sides thereof the step 41 result, and thereby the chip is formed. A vapor-deposited aluminum contact 87 Voltage between the control electrode and the source is formed on the portion 79 of η material. A of the field-effect transistor 23 in the step 41 further vapor-deposited aluminum contact 89 is enlarged on the Ab. As a result, it is formed by the field effect cut 81 from η material. A vaporized one Current flowing through the transistor continues. This effect 35 aluminum contact 91 is on the part 75 of the in the step 41 is self-reinforcing, and the step p-layer near the portion 81 on which the descent switched off. cut 79 formed on the opposite side. A second

After the impulse has reached the input 55, the aluminum contact 101 is vapor-deposited

leads, the stage 42 is switched on, while the part 75 of the p-layer on the the sections 79

Levels 41, 43 and 44 are switched off. Since all of the stu- 40 and 81 formed the distal end. The aluminum

fen the same and with the neighboring stages in exact contact 83, 85, 91 and 101 are in ohmic

connected in the same way, the Stu contacts are made to the p-layer, and the contacts 87 and

Fen 41, 43 and 44 now in exactly the same way 89 are in ohmic contact with the sections

kept switched off, as before the stages 42, 43 79 and 81. Ohmic contacts in the form of tongues

and 44 were kept off when stage 45 103, 105 and 107 are attached to the block of n-material

41 was live. Likewise, the step 42 is now formed on the side that consists of the parts 75 and

kept switched on in the same way as the existing p-layer is opposite. Of the

in front of step 41. Ohmic contact 103 is directly below part 77

The next p-layer pulse applied to input 55 is applied. The ohmic contact 103 causes the step 43 to be switched on, which so lies directly under the section 79 of n-material, in turn causes the step 42 to be switched off, and the ohmic contact 107 is on the other in the same way as before the step 42 turned on end of the block 71 made of n-material under the aluminum and the step 41 was turned off. Each mmium contact 101 attached. The in F i g. The pulse following 7 and 8 causes the respective integrated semiconductor arrangement shown to be switched on, the following stage and the switch-off of the previously switched on can be produced using the same method, the switched stage. If stage 44 was previously switched on for the establishment of the arrangement of, the next pulse causes stage 41 to resume. 2 b and 2 c have been described,
which is switched on while stage 44 is switched off. The arrangement shown in FIGS. 7 and 8 is switched on. The arrangement works in this nearly the entire circuit for one stage of the ring-way continuously, as long as the input 55 impulses to- 60 counter represent. To use this arrangement for are led. a ring counter stage must contact 85 directly

Using the combined switchgear, the contact 87 can be connected, and the contact

a bistable flip-flop 89 must be connected directly to contact 105

build. This flip-flop is obtained. The capacitor 53 of each stage is in the integrated

if the ring counter made up of only two stages 65 grated semiconductor device is not provided and

will. In this case larger input pulses must be attached outside. This capacitor

required for switching because the source is connected to contact 91. Furthermore,

electrode 17 in the switched-off stage as a result of their contact 83 connected to ground, and the voltage

13 14

of +10 volts is fed to terminal 103. After the block is connected in this way to the collector electrode 19 of the transformer, the entire circuit is for a stage sistor 25. This high voltage is present for the control of the ring counter. The resistance of the electrode of the field effect transistor 23 is fed to the current path between the contacts 83 and 85 5, whereby this is kept switched off. The represents the resistor 51 of the stage. The resistance current then flows from the positive terminal 132 of the current path through the part 75 of the p-layer through the adjustable resistor 136, whereby between the contacts 91 and 101 is the resistance capacitor 138 is being charged. This has the effect of being shown as 61. The resistance of the current path is caused by the potential at the source electrode 17 on the n-type semiconductor material of the block 71 increasing between the io. The capacitor 138 charges in this way contacts 105 and 107 represents the resistor 59. Until the voltage between the control electrode The resistance of the current path between the Kon and the source of the field effect transistor 23 clocks 103 and 105 through the η -Material of the block the cut-off voltage drops. At this point, 71 represents the resistor 47. The sections 79, the field effect transistor 23 begins to carry current, and 81, the pn junction between the layer from 15 and a base current flows to the transistor 25, so p- Material and the block 71 made of η material between these sections and the contacts 87, 89, can also be seen in the transistor 25. This effect causes a drop 91 and 105 with the interconnected contacts - the collector voltage of the transistor 25 and the th 89 and 105 together constitute the combined control electrode voltage of the field effect transistor switching arrangement from the single-pole field effect 20 23. Therefore, the current flow in the field effect increases. Transistor and transistor 23 from the two-pole junction transistor. This effect is self-amplifying, the contact 91 being the source electrode of the kend, and the collector voltage of the transistor 25 being the switching arrangement, the common connection finally drops so far that the control electrodes between the contacts 89 and 105 are the collector junction of the field effect transistor 23 in the Represents the through electrode of the switching arrangement and the conical direction is biased. When this occurs, clock 87 is the emitter electrode of the switching arrangement. the capacitor 138 discharges through the control

To interconnect a number of these as the electrode of the field effect transistor 23 in the column-integrated semiconductor arrangements according to FIG. 6 and 7 lecturer of transistor 25. Of course, a part of the formed levels of the contact 101 of each capacitor current is through the base of the transistor stage having the contact 87 of the preceding stage 30, 25. The capacitor 138 connected to its discharge, and the contact 91 each stage will continue in this way until the voltage at the source is connected to the contact 107 of the following stage. electrode 17 falls to a value at which the current, the free terminals of the starts adapted to the contacts 91 to decrease in the field-effect transistor, closed capacitors 53 are of course overall When this turn-off operation of the field effect Tranmeinsam to the input terminal 55 and via the 35 sistor 23 is used, is connected to the transistor 25 resistor 57 to ground, as in FIG. 6 the flowing base current is reduced, whereby a is also shown. In this way, the ring counter drop in the collector current of the transistor 25 can build up integrated semiconductor arrangements. is called. The control electrode voltage of the

F i g. 9 shows the use of the combined field effect transistor 23 is therefore increasing. This we-

Switching arrangement for the formation of a tilting oscillator. 40 kung sets the flowing in the field effect transistor 23

In Fig. 9 is again that from the unipolar field current further down. This effect is self-reinforcing

Effect transistor 23 and the bipolar area kend, and transistors 23 and 25 both hear

transistor 25 existing combined Schaltanord- with the power supply. Then the

tion with the reference numeral 35 and to the capacitor 138 again via the resistor 136

45 to load better understanding by the equivalent circuit, and the cycle is repeated as often as desired.

posed. The collector electrode 19 of the switchgear The frequency of the circuit is determined by values of the

voltage 35 is loaded via a resistor 134 of 200 ohm capacitor 138 and resistor 136

connected to terminal 132 , at which a voltage is correct, since these two elements are the condensate

power source of +10 volts. The charging current flowing at the terminal sator 138 and the increase in

132 existing voltage of +10 volts will also determine 50 voltage at the source electrode 17 ,

via an adjustable resistor 136 of 1 Meg- With a suitable choice of the values of the capacitor

ohm of the source electrode 17 of the switching arrangement 138 and the resistor 136 can be achieved

35 supplied. The emitter electrode 21 of the circuit means that the circuit oscillates at a frequency that

arrangement 35 is via a resistor 43 of between 600 kHz and less than 1 Hz. the

100 ohms connected to ground. A capacitor 55 period and the pulse width are directly related to the capacitance

138 of 0.022 ^ F is proportional between the source electrode tat of the capacitor. The one from the

17 of the switching arrangement 35 and ground. The pulse width generated by the circuit can

To understand the mode of operation of the arrangement, let us assume that the ratio of the resistance is that the capacitor 138 134 to the resistor 136 is reduced. Through is discharged. The source electrode 17 is therefore at 60 the choice of a small ratio can be the Traner a low voltage, with the result that the sistor 25 is kept outside of the strong saturation, the voltage between the control electrode and the, so that it is then easier to use the source of the unipolar field effect transistor 23 large transistor 25 by the cumulative effect. The field effect transistor 23 is therefore switched off.

tet so that no current flows through it. This has the 65 The circuit of FIG. 9 can be used with a half-sequence that no base current through the surface conductor arrangement of the circuit shown in FIG. 2 type or transistor 25 flows, and the transistor 25 is therefore by interconnection of a field effect Transtromlos. No sistor and a flat transistor can therefore be built into this transistor.

Claims (4)

the. When the latter circuit is used, the pulse width generated by the circuit can be further reduced by inserting a resistor between the base of transistor 25 and ground. In this way, a path leading directly to ground is created for the base reverse current of transistor 25, which flows when transistor 25 is switched off. Patent claims: 1. Switching arrangement with a unipolar and a bipolar transistor, in which the one Ohmic electrode of the unipolar transistor electrically with the base electrode of the bipolar Transistor is connected, characterized in that the non-ohmic electrode of the unipolar transistor electrically connected to the collector electrode of the bipolar transistor is that the second ohmic electrode of the unipolar transistor is used as an input and that the collector electrode and the emitter electrode of the bipolar transistor as an output and are used as voltage supply electrodes. 2. Switching arrangement according to claim 1, characterized in that to form an oscillator the output is coupled to the input via a phase shifter arrangement and that the a bias voltage is applied to the second ohmic electrode. 3. Switching arrangement according to claim 1, characterized in that to form a ring counter a switching arrangement is provided for each stage of the ring counter and that the output a switching arrangement electrically connected to the input of the following switching arrangement is. 4. Switching arrangement according to claim 1, characterized in that three or more switching arrangements are provided and that the output of one of the switching arrangements with the inputs the other switching arrangements is connected. Considered publications:
German Patent Nos. 966 849, 1115 837;
French patent specification No. 1141521,
1240436,1249135. For this purpose 2 sheets of drawings 709 607/478 6.67 0 Bundesdruckerei Berlin