ES326632A1 - Un dispositivo semiconductor. - Google Patents

Un dispositivo semiconductor.

Info

Publication number
ES326632A1
ES326632A1 ES0326632A ES326632A ES326632A1 ES 326632 A1 ES326632 A1 ES 326632A1 ES 0326632 A ES0326632 A ES 0326632A ES 326632 A ES326632 A ES 326632A ES 326632 A1 ES326632 A1 ES 326632A1
Authority
ES
Spain
Prior art keywords
zone
electrode
wafer
conductivity type
main face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0326632A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of ES326632A1 publication Critical patent/ES326632A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Recrystallisation Techniques (AREA)
ES0326632A 1965-05-14 1966-05-12 Un dispositivo semiconductor. Expired ES326632A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US455737A US3360696A (en) 1965-05-14 1965-05-14 Five-layer symmetrical semiconductor switch

Publications (1)

Publication Number Publication Date
ES326632A1 true ES326632A1 (es) 1967-03-01

Family

ID=23810087

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0326632A Expired ES326632A1 (es) 1965-05-14 1966-05-12 Un dispositivo semiconductor.

Country Status (7)

Country Link
US (1) US3360696A (es)
DE (1) DE1564527B1 (es)
ES (1) ES326632A1 (es)
FR (1) FR1483998A (es)
GB (1) GB1141103A (es)
NL (1) NL157149B (es)
SE (1) SE314442B (es)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5696402A (en) * 1965-09-28 1997-12-09 Li; Chou H. Integrated circuit device
US6849918B1 (en) 1965-09-28 2005-02-01 Chou H. Li Miniaturized dielectrically isolated solid state device
US7038290B1 (en) 1965-09-28 2006-05-02 Li Chou H Integrated circuit device
US3448354A (en) * 1967-01-20 1969-06-03 Rca Corp Semiconductor device having increased resistance to second breakdown
US3504242A (en) * 1967-08-11 1970-03-31 Westinghouse Electric Corp Switching power transistor with thyristor overload capacity
GB1301193A (en) * 1970-02-27 1972-12-29 Mullard Ltd Improvements in semiconductor devices
US3727116A (en) * 1970-05-05 1973-04-10 Rca Corp Integral thyristor-rectifier device
FR2128236B1 (es) * 1971-03-12 1976-06-11 Gen Electric
US3879744A (en) * 1971-07-06 1975-04-22 Silec Semi Conducteurs Bidirectional thyristor
US3914783A (en) * 1971-10-01 1975-10-21 Hitachi Ltd Multi-layer semiconductor device
US3967308A (en) * 1971-10-01 1976-06-29 Hitachi, Ltd. Semiconductor controlled rectifier
JPS4918279A (es) * 1972-06-08 1974-02-18
US3934331A (en) * 1972-03-21 1976-01-27 Hitachi, Ltd. Method of manufacturing semiconductor devices
US3787719A (en) * 1972-11-10 1974-01-22 Westinghouse Brake & Signal Triac
JPS541437B2 (es) * 1973-04-18 1979-01-24
DE2351783C3 (de) * 1973-10-16 1982-02-11 Brown, Boveri & Cie Ag, 6800 Mannheim Zweiweg-Halbleiterschalter (Triac)
US3896477A (en) * 1973-11-07 1975-07-22 Jearld L Hutson Multilayer semiconductor switching devices
US3918082A (en) * 1973-11-07 1975-11-04 Jearld L Hutson Semiconductor switching device
DE2407696C3 (de) * 1974-02-18 1979-02-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
US4190853A (en) * 1974-07-15 1980-02-26 Hutson Jearld L Multilayer semiconductor switching devices
US4187515A (en) * 1974-08-15 1980-02-05 Tokyo Shibaura Electric Co., Ltd. Semiconductor controlled rectifier
US3972014A (en) * 1974-11-11 1976-07-27 Hutson Jearld L Four quadrant symmetrical semiconductor switch
US4063278A (en) * 1975-01-06 1977-12-13 Hutson Jearld L Semiconductor switch having sensitive gate characteristics at high temperatures
JPS52146570A (en) * 1976-05-31 1977-12-06 Toshiba Corp Reverse conducting thyristor
CH594989A5 (es) * 1976-09-03 1978-01-31 Bbc Brown Boveri & Cie
US4286279A (en) * 1976-09-20 1981-08-25 Hutson Jearld L Multilayer semiconductor switching devices
US4292646A (en) * 1977-01-07 1981-09-29 Rca Corporation Semiconductor thyristor device having integral ballast means
CH622127A5 (es) * 1977-12-21 1981-03-13 Bbc Brown Boveri & Cie
EP0017860A3 (en) * 1979-04-11 1982-07-21 Teccor Electronics, Inc. Semiconductor switching device and method of making same
DE2945347A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb
DE2945366A1 (de) * 1979-11-09 1981-05-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen
DE2945380A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Triac mit einem mehrschichten-halbleiterkoerper
DE3019883A1 (de) * 1980-05-23 1981-12-03 Siemens AG, 1000 Berlin und 8000 München Zweirichtungsthyristor
DE3039939A1 (de) * 1980-10-23 1982-06-16 Brown, Boveri & Cie Ag, 6800 Mannheim Anordnung zum aufschweissen eines kontaktstueckes auf einen kontakttraeger
CA1238115A (en) * 1986-10-29 1988-06-14 Jerzy Borkowicz Bi-directional overvoltage protection device
US20040144999A1 (en) * 1995-06-07 2004-07-29 Li Chou H. Integrated circuit device
US20060261346A1 (en) * 2005-05-18 2006-11-23 Sei-Hyung Ryu High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same
US7615801B2 (en) * 2005-05-18 2009-11-10 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US9741839B1 (en) * 2016-06-21 2017-08-22 Powerex, Inc. Gate structure of thyristor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL129185C (es) * 1960-06-10
US3196330A (en) * 1960-06-10 1965-07-20 Gen Electric Semiconductor devices and methods of making same
US3124703A (en) * 1960-06-13 1964-03-10 Figure
DE1166940B (de) * 1961-03-21 1964-04-02 Siemens Ag Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper und vier Zonen abwechselnden Leitfaehigkeitstyps und Verfahren zum Herstellen
US3123750A (en) * 1961-10-31 1964-03-03 Multiple junction semiconductor device
US3284639A (en) * 1963-02-19 1966-11-08 Westinghouse Electric Corp Semiconductor switch device of controlled rectifier type responsive to approximately equal gate signals of either polarity
US3275909A (en) * 1963-12-19 1966-09-27 Gen Electric Semiconductor switch

Also Published As

Publication number Publication date
FR1483998A (es) 1967-09-13
NL157149B (nl) 1978-06-15
US3360696A (en) 1967-12-26
GB1141103A (en) 1969-01-29
NL6606620A (es) 1966-11-15
SE314442B (es) 1969-09-08
DE1564527B1 (de) 1972-05-25

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