ES374600A1 - Perfeccionamientos en la construccion de dispositivos de semiconductor de oxido metalico. - Google Patents

Perfeccionamientos en la construccion de dispositivos de semiconductor de oxido metalico.

Info

Publication number
ES374600A1
ES374600A1 ES374600A ES374600A ES374600A1 ES 374600 A1 ES374600 A1 ES 374600A1 ES 374600 A ES374600 A ES 374600A ES 374600 A ES374600 A ES 374600A ES 374600 A1 ES374600 A1 ES 374600A1
Authority
ES
Spain
Prior art keywords
translation
construction
metal oxide
machine
oxide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES374600A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of ES374600A1 publication Critical patent/ES374600A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
ES374600A 1968-12-16 1969-12-16 Perfeccionamientos en la construccion de dispositivos de semiconductor de oxido metalico. Expired ES374600A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78414468A 1968-12-16 1968-12-16

Publications (1)

Publication Number Publication Date
ES374600A1 true ES374600A1 (es) 1972-01-01

Family

ID=25131479

Family Applications (1)

Application Number Title Priority Date Filing Date
ES374600A Expired ES374600A1 (es) 1968-12-16 1969-12-16 Perfeccionamientos en la construccion de dispositivos de semiconductor de oxido metalico.

Country Status (9)

Country Link
JP (1) JPS4815390B1 (es)
BE (1) BE742820A (es)
BR (1) BR6914737D0 (es)
CH (1) CH518009A (es)
DE (1) DE1961641A1 (es)
ES (1) ES374600A1 (es)
FR (1) FR2026209A7 (es)
GB (1) GB1297143A (es)
NL (1) NL6918853A (es)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2109915A1 (de) * 1971-03-02 1972-09-07 Ibm Deutschland Oberflächengesteuerte Halbleiteranordnung
JPS549870B2 (es) * 1972-10-04 1979-04-27
JPS5522888A (en) * 1978-09-05 1980-02-18 Tdk Corp Manufacturing method of insulation gate type semiconductor device

Also Published As

Publication number Publication date
NL6918853A (es) 1970-06-18
JPS4815390B1 (es) 1973-05-14
FR2026209A7 (es) 1970-09-18
BE742820A (es) 1970-05-14
BR6914737D0 (pt) 1973-01-02
DE1961641A1 (de) 1970-07-30
CH518009A (de) 1972-01-15
GB1297143A (es) 1972-11-22

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