GB1297143A - - Google Patents
Info
- Publication number
- GB1297143A GB1297143A GB1297143DA GB1297143A GB 1297143 A GB1297143 A GB 1297143A GB 1297143D A GB1297143D A GB 1297143DA GB 1297143 A GB1297143 A GB 1297143A
- Authority
- GB
- United Kingdom
- Prior art keywords
- gate
- source
- silicon
- drain
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 230000006911 nucleation Effects 0.000 abstract 1
- 238000010899 nucleation Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1297143 IGFETs FAIRCHILD CAMERA & INSTRUMENT CORP 21 Nov 1969 [16 Dec 1968] 57202/69 Heading H1K A MOSFET comprising diffused source and drain regions in a silicon substrate of opposite conductivity type has a gate electrode of silicon formed by decomposition of silane in a hydrogen atmosphere at a temperature between 630‹ and 680‹ C., and doped with 10<SP>17</SP> to 10<SP>19</SP> impurity atoms/c.c. This affords a transistor with a low turn-on voltage and a high ratio between the voltages required for inversion beneath the lead and gate respectively for comparable thickness of insulation. A typical device is formed on a 111 or 100 N-type silicon substrate by first oxidizing the surface to give a layer thinner over the channel, growing amorphous silicon as described above after pretreatment to provide nucleation centres and diffusing it with donor impurity, depositing further silica overall, forming holes in the layers and diffusing therethrough to form source and drain regions and finally growing further oxide and aperturing for provision of deposited aluminium contacts. To form a P-gate device the silicon is selectively deposited at the gate site and an overall oxide layer deposited and apertured there and at source and drain sites and boron diffused in to simultaneously form the source and drain and dope the gate. An integrated complementary MOS inverter circuit is described in which one transistor is formed in an N-type wafer and the other in a P-type island therein, the gate electrodes meeting in a PN junction which is bridged by a common contact. Reference has been directed by the Comptroller to Specification 1,186,625.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US78414468A | 1968-12-16 | 1968-12-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1297143A true GB1297143A (en) | 1972-11-22 |
Family
ID=25131479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1297143D Expired GB1297143A (en) | 1968-12-16 | 1969-11-21 |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS4815390B1 (en) |
| BE (1) | BE742820A (en) |
| BR (1) | BR6914737D0 (en) |
| CH (1) | CH518009A (en) |
| DE (1) | DE1961641A1 (en) |
| ES (1) | ES374600A1 (en) |
| FR (1) | FR2026209A7 (en) |
| GB (1) | GB1297143A (en) |
| NL (1) | NL6918853A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2109915A1 (en) * | 1971-03-02 | 1972-09-07 | Ibm Deutschland | Surface controlled semiconductor device |
| JPS549870B2 (en) * | 1972-10-04 | 1979-04-27 | ||
| JPS5522888A (en) * | 1978-09-05 | 1980-02-18 | Tdk Corp | Manufacturing method of insulation gate type semiconductor device |
-
1969
- 1969-11-21 GB GB1297143D patent/GB1297143A/en not_active Expired
- 1969-12-03 BR BR21473769A patent/BR6914737D0/en unknown
- 1969-12-05 FR FR6942134A patent/FR2026209A7/fr not_active Expired
- 1969-12-08 BE BE742820D patent/BE742820A/xx unknown
- 1969-12-09 DE DE19691961641 patent/DE1961641A1/en active Pending
- 1969-12-15 JP JP10020169A patent/JPS4815390B1/ja active Pending
- 1969-12-16 ES ES374600A patent/ES374600A1/en not_active Expired
- 1969-12-16 NL NL6918853A patent/NL6918853A/xx unknown
- 1969-12-16 CH CH1875569A patent/CH518009A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| ES374600A1 (en) | 1972-01-01 |
| NL6918853A (en) | 1970-06-18 |
| DE1961641A1 (en) | 1970-07-30 |
| FR2026209A7 (en) | 1970-09-18 |
| BE742820A (en) | 1970-05-14 |
| JPS4815390B1 (en) | 1973-05-14 |
| CH518009A (en) | 1972-01-15 |
| BR6914737D0 (en) | 1973-01-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |