GB1298375A - Method of making field effect transistors - Google Patents
Method of making field effect transistorsInfo
- Publication number
- GB1298375A GB1298375A GB49045/70A GB4904570A GB1298375A GB 1298375 A GB1298375 A GB 1298375A GB 49045/70 A GB49045/70 A GB 49045/70A GB 4904570 A GB4904570 A GB 4904570A GB 1298375 A GB1298375 A GB 1298375A
- Authority
- GB
- United Kingdom
- Prior art keywords
- diffusion
- gate
- source
- opening
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 230000005669 field effect Effects 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 13
- 239000012535 impurity Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- -1 Si 3 N 4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1298375 Semi-conductor devices HITACHI Ltd 15 Oct 1970 [17 Oct 1969] 49045/70 Heading H1K In a method of making an IGFET the opening for the gate region diffusion is determined by the edge of the gate electrode. An IGFET comprises a drain region 12a, of low impurity concentration formed in a silicon substrate of the opposite conductivity type, and isolated by diffused walls 14. An oxide layer 13 overlying the drain region is removed and replaced by an insulating film 15 of SiO 2 or Al 2 O 3 , Si 3 N 4 , SiO 2 and P 2 O 5 or SiO 2 and Al 2 O 3 to form the gate insulation. A gate electrode 17 of polycrystalline silicon, molybdenum, tungsten, titanium, or tantalum is formed on the layer 15, and using photo-resist techniques an opening 18 is made in the insulating layer, the opening being bounded on one side by the edge 17a of the electrode 17, which acts as a mask for that part of the opening. An impurity of the substrate conductivity type is diffused through the opening 18 to make contact with the substrate, and subsequently a diffusion of the drain conductivity type is also made through the opening 18 to form a source region 22. This double diffusion causes a gate region to be formed between source and drain by the first diffusion, the gate width being determined by the difference in lateral diffusions of the two diffusion steps. This gate region may be only 0À5 Á in width. Simultaneously with the source diffusion a diffusion may be made to give a higher impurity drain region 23. Contacts are later made to the drain and source regions, and gate electrode to form the IGFET. The dopants may be of boron and phosphorus, and the contacts of aluminium. In a second embodiment, one source and gate diffusion may be used to form a device having two drains and two gate electrodes. In another embodiment the source and drain region may be formed in a pocket in the substrate. In a further embodiment, the gate diffusion is of less depth than the low impurity drain region, but contacts one of the isolation walls, enabling an integrated circuit to be formed comprising an IGFET and a bipolar transistor, the gate diffusion being simultaneous with the base diffusion of the bipolar, and the source and drain regions being formed simultaneously with the emitter diffusion.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP44082570A JPS4831516B1 (en) | 1969-10-17 | 1969-10-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1298375A true GB1298375A (en) | 1972-11-29 |
Family
ID=13778131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB49045/70A Expired GB1298375A (en) | 1969-10-17 | 1970-10-15 | Method of making field effect transistors |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS4831516B1 (en) |
| DE (1) | DE2050955B2 (en) |
| GB (1) | GB1298375A (en) |
| NL (1) | NL7014977A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT374976B (en) * | 1974-05-10 | 1984-06-25 | Sony Corp | SENSOR CIRCUIT FOR DETECTING THE RESISTANCE VALUE OF A SENSOR ELEMENT |
| AT374974B (en) * | 1974-04-25 | 1984-06-25 | Sony Corp | NOISE REDUCTION CIRCUIT |
| AT374975B (en) * | 1974-05-10 | 1984-06-25 | Sony Corp | OSCILLATOR |
| US20170110455A1 (en) * | 2015-10-20 | 2017-04-20 | Rohm Co., Ltd. | Semiconductor device and semiconductor integrated circuit using the same |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7606483A (en) * | 1976-06-16 | 1977-12-20 | Philips Nv | DEVICE FOR MIXING SIGNALS. |
| FR2477778A1 (en) * | 1980-03-04 | 1981-09-11 | Thomson Csf | ISOLATED GRID FIELD EFFECT TRANSISTOR STRUCTURE AND APPLICATION TO LOGICAL DOOR PRODUCTION |
| JPS5793542A (en) * | 1980-12-03 | 1982-06-10 | Hitachi Ltd | Semiconductor integrated circuit device |
-
1969
- 1969-10-17 JP JP44082570A patent/JPS4831516B1/ja active Pending
-
1970
- 1970-10-13 NL NL7014977A patent/NL7014977A/xx unknown
- 1970-10-15 GB GB49045/70A patent/GB1298375A/en not_active Expired
- 1970-10-16 DE DE19702050955 patent/DE2050955B2/en not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT374974B (en) * | 1974-04-25 | 1984-06-25 | Sony Corp | NOISE REDUCTION CIRCUIT |
| AT374976B (en) * | 1974-05-10 | 1984-06-25 | Sony Corp | SENSOR CIRCUIT FOR DETECTING THE RESISTANCE VALUE OF A SENSOR ELEMENT |
| AT374975B (en) * | 1974-05-10 | 1984-06-25 | Sony Corp | OSCILLATOR |
| US20170110455A1 (en) * | 2015-10-20 | 2017-04-20 | Rohm Co., Ltd. | Semiconductor device and semiconductor integrated circuit using the same |
| US10026738B2 (en) * | 2015-10-20 | 2018-07-17 | Rohm Co., Ltd. | Semiconductor device and semiconductor integrated circuit using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2050955B2 (en) | 1972-01-27 |
| DE2050955A1 (en) | 1971-06-24 |
| NL7014977A (en) | 1971-04-20 |
| JPS4831516B1 (en) | 1973-09-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3653978A (en) | Method of making semiconductor devices | |
| US4729001A (en) | Short-channel field effect transistor | |
| GB1408180A (en) | Semiconductor device manufacture | |
| US4065783A (en) | Self-aligned double implanted short channel V-groove MOS device | |
| GB1423183A (en) | Complemenatry field effect transistors | |
| KR960036041A (en) | High breakdown voltage transistor and manufacturing method thereof | |
| JP2001352057A (en) | Semiconductor device and its manufacturing method | |
| JPH0693494B2 (en) | Method for manufacturing semiconductor integrated circuit device | |
| GB1488151A (en) | Field effect devices | |
| KR930006972A (en) | Method of manufacturing field effect transistor | |
| US4316203A (en) | Insulated gate field effect transistor | |
| GB1242896A (en) | Semiconductor device and method of fabrication | |
| GB1327920A (en) | Transistor and method of manufacturing the same | |
| GB1210090A (en) | Insulated gate field effect transistor | |
| KR940004846A (en) | Semiconductor device and manufacturing method | |
| KR890005884A (en) | Manufacturing method of bipolar transistor | |
| KR840005927A (en) | Semiconductor integrated circuit device and manufacturing method thereof | |
| KR960026747A (en) | Manufacturing method of semiconductor integrated circuit device | |
| GB1298375A (en) | Method of making field effect transistors | |
| US4175317A (en) | Method for manufacturing junction type field-effect transistors | |
| GB1389311A (en) | Semiconductor device manufacture | |
| GB1457800A (en) | Semiconductor devices | |
| KR880014644A (en) | Semiconductor integrated circuit device and manufacturing method thereof | |
| GB1499389A (en) | Monolithic semiconductor mask programmable rom and a method for manufacturing the same | |
| JPH05299648A (en) | Mis field effect transistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |