ES309288A3 - Un dispositivo electrico de estado solido. - Google Patents
Un dispositivo electrico de estado solido.Info
- Publication number
- ES309288A3 ES309288A3 ES0309288A ES309288A ES309288A3 ES 309288 A3 ES309288 A3 ES 309288A3 ES 0309288 A ES0309288 A ES 0309288A ES 309288 A ES309288 A ES 309288A ES 309288 A3 ES309288 A3 ES 309288A3
- Authority
- ES
- Spain
- Prior art keywords
- translation
- machine
- solid state
- electrical device
- legally binding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007787 solid Substances 0.000 title abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US344921A US3290569A (en) | 1964-02-14 | 1964-02-14 | Tellurium thin film field effect solid state electrical devices |
Publications (1)
Publication Number | Publication Date |
---|---|
ES309288A3 true ES309288A3 (es) | 1966-01-01 |
Family
ID=23352681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES0309288A Expired ES309288A3 (es) | 1964-02-14 | 1965-02-12 | Un dispositivo electrico de estado solido. |
Country Status (5)
Country | Link |
---|---|
US (1) | US3290569A (es) |
DE (1) | DE1514337B1 (es) |
ES (1) | ES309288A3 (es) |
GB (1) | GB1090391A (es) |
SE (1) | SE318947B (es) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3445732A (en) * | 1965-06-28 | 1969-05-20 | Ledex Inc | Field effect device having an electrolytically insulated gate |
US3351786A (en) * | 1965-08-06 | 1967-11-07 | Univ California | Piezoelectric-semiconductor, electromechanical transducer |
US3395292A (en) * | 1965-10-19 | 1968-07-30 | Gen Micro Electronics Inc | Shift register using insulated gate field effect transistors |
US3493785A (en) * | 1966-03-24 | 1970-02-03 | Rca Corp | Bistable circuits |
US3424934A (en) * | 1966-08-10 | 1969-01-28 | Bell Telephone Labor Inc | Electroluminescent cell comprising zinc-doped gallium arsenide on one surface of a silicon nitride layer and spaced chromium-gold electrodes on the other surface |
NL6611537A (es) * | 1966-08-17 | 1968-02-19 | ||
US3480843A (en) * | 1967-04-18 | 1969-11-25 | Gen Electric | Thin-film storage diode with tellurium counterelectrode |
US3593071A (en) * | 1969-04-04 | 1971-07-13 | Ncr Co | Pointed gate semiconductor device |
US3627662A (en) * | 1970-02-24 | 1971-12-14 | Gte Laboratories Inc | Thin film transistor and method of fabrication thereof |
US3657613A (en) * | 1970-05-04 | 1972-04-18 | Westinghouse Electric Corp | Thin film electronic components on flexible metal substrates |
US3726006A (en) * | 1971-04-28 | 1973-04-10 | Us Army | Method for sintering thick-film oxidizable silk-screened circuitry |
DE3028718C2 (de) * | 1979-07-31 | 1982-08-19 | Sharp K.K., Osaka | Dünnfilmtransistor in Verbindung mit einer Anzeigevorrichtung |
JPS58170067A (ja) * | 1982-03-31 | 1983-10-06 | Fujitsu Ltd | 薄膜トランジスタの製造方法 |
JPS58197775A (ja) * | 1982-05-13 | 1983-11-17 | Canon Inc | 薄膜トランジスタ |
GB2140203B (en) * | 1983-03-15 | 1987-01-14 | Canon Kk | Thin film transistor with wiring layer continuous with the source and drain |
US5242844A (en) * | 1983-12-23 | 1993-09-07 | Sony Corporation | Semiconductor device with polycrystalline silicon active region and method of fabrication thereof |
US5172203A (en) * | 1983-12-23 | 1992-12-15 | Sony Corporation | Semiconductor device with polycrystalline silicon active region and method of fabrication thereof |
US5162892A (en) * | 1983-12-24 | 1992-11-10 | Sony Corporation | Semiconductor device with polycrystalline silicon active region and hydrogenated passivation layer |
DE3504234A1 (de) * | 1984-09-06 | 1986-03-13 | Siemens AG, 1000 Berlin und 8000 München | Feldeffekt-halbleiterbauelement |
JPH01241175A (ja) * | 1988-03-23 | 1989-09-26 | Seikosha Co Ltd | 非晶質シリコン薄膜トランジスタの製造方法 |
US8994078B2 (en) * | 2012-06-29 | 2015-03-31 | Infineon Technologies Austria Ag | Semiconductor device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL97896C (es) * | 1955-02-18 | |||
NL293447A (es) * | 1962-05-31 |
-
1964
- 1964-02-14 US US344921A patent/US3290569A/en not_active Expired - Lifetime
-
1965
- 1965-02-04 GB GB4941/65A patent/GB1090391A/en not_active Expired
- 1965-02-12 SE SE1845/65A patent/SE318947B/xx unknown
- 1965-02-12 DE DE19651514337 patent/DE1514337B1/de active Pending
- 1965-02-12 ES ES0309288A patent/ES309288A3/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1090391A (en) | 1967-11-08 |
SE318947B (es) | 1969-12-22 |
DE1514337B1 (de) | 1970-07-02 |
US3290569A (en) | 1966-12-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ES309288A3 (es) | Un dispositivo electrico de estado solido. | |
ES310007A1 (es) | Un dispositivo de efecto de campo de estado solido. | |
ES397416A1 (es) | Un dispositivo semiconductor. | |
NL141330B (nl) | Veldeffecttransistor met een besturingspoortelektrode, aangebracht op een dielektrische oxydelaag. | |
ES196297U (es) | Un dispositivo semiconductor. | |
ES316541A1 (es) | Un dispositivo electrico del tipo de red semiconductora o de circuito integrado. | |
ES319914A1 (es) | Un dispositivo transitor de efecto de campo de barrera aislada. | |
GB1001241A (en) | Improvements relating to magnetic devices | |
ES319749A2 (es) | Metodo de fabricacion de un circuito integrado, por corrosion selectiva, de un sustrato recubierto de capas multiples de pelicula delgada perfeccionado. | |
GB1065930A (en) | Semi-conductor switching element | |
ES329800A1 (es) | Un metodo de fabricar un sistema de electrodos. | |
ES330535A1 (es) | Un dispositivo de efecto gunn. | |
ES327183A1 (es) | Un metodo de fabricar un canal conductor en un cuerpo semiconductor cristalino. | |
JPS51150284A (en) | Semiconductor unvolatile memory unit | |
JPS5214384A (en) | Input resistor for protection of semiconductor device | |
JPS5263684A (en) | Non-volatile semiconductor memory device | |
ES315620A1 (es) | Un dispositivo semiconductor para circuitos de ultrafrecuencia. | |
ES374600A1 (es) | Perfeccionamientos en la construccion de dispositivos de semiconductor de oxido metalico. | |
JPS5291381A (en) | Field effect type semiconductor device | |
ES340119A1 (es) | Dispositivo conmutador. | |
ES297171A1 (es) | Un dispositivo electrico del tipo que tiene una capa o pelicula conductora sobre una base no conductora | |
ES451614A1 (es) | Perfeccionamientos en componentes semiconductores. | |
JPS5287990A (en) | Semiconductor device | |
JPS52127157A (en) | Manufacture of semiconductor | |
GB1030670A (en) | Semiconductor devices |