SE318947B - - Google Patents

Info

Publication number
SE318947B
SE318947B SE1845/65A SE184565A SE318947B SE 318947 B SE318947 B SE 318947B SE 1845/65 A SE1845/65 A SE 1845/65A SE 184565 A SE184565 A SE 184565A SE 318947 B SE318947 B SE 318947B
Authority
SE
Sweden
Application number
SE1845/65A
Inventor
P Weimer
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE318947B publication Critical patent/SE318947B/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
SE1845/65A 1964-02-14 1965-02-12 SE318947B (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US344921A US3290569A (en) 1964-02-14 1964-02-14 Tellurium thin film field effect solid state electrical devices

Publications (1)

Publication Number Publication Date
SE318947B true SE318947B (xx) 1969-12-22

Family

ID=23352681

Family Applications (1)

Application Number Title Priority Date Filing Date
SE1845/65A SE318947B (xx) 1964-02-14 1965-02-12

Country Status (5)

Country Link
US (1) US3290569A (xx)
DE (1) DE1514337B1 (xx)
ES (1) ES309288A3 (xx)
GB (1) GB1090391A (xx)
SE (1) SE318947B (xx)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3445732A (en) * 1965-06-28 1969-05-20 Ledex Inc Field effect device having an electrolytically insulated gate
US3351786A (en) * 1965-08-06 1967-11-07 Univ California Piezoelectric-semiconductor, electromechanical transducer
US3395292A (en) * 1965-10-19 1968-07-30 Gen Micro Electronics Inc Shift register using insulated gate field effect transistors
US3493785A (en) * 1966-03-24 1970-02-03 Rca Corp Bistable circuits
US3424934A (en) * 1966-08-10 1969-01-28 Bell Telephone Labor Inc Electroluminescent cell comprising zinc-doped gallium arsenide on one surface of a silicon nitride layer and spaced chromium-gold electrodes on the other surface
NL6611537A (xx) * 1966-08-17 1968-02-19
US3480843A (en) * 1967-04-18 1969-11-25 Gen Electric Thin-film storage diode with tellurium counterelectrode
US3593071A (en) * 1969-04-04 1971-07-13 Ncr Co Pointed gate semiconductor device
US3627662A (en) * 1970-02-24 1971-12-14 Gte Laboratories Inc Thin film transistor and method of fabrication thereof
US3657613A (en) * 1970-05-04 1972-04-18 Westinghouse Electric Corp Thin film electronic components on flexible metal substrates
US3726006A (en) * 1971-04-28 1973-04-10 Us Army Method for sintering thick-film oxidizable silk-screened circuitry
DE3028718C2 (de) * 1979-07-31 1982-08-19 Sharp K.K., Osaka Dünnfilmtransistor in Verbindung mit einer Anzeigevorrichtung
JPS58170067A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 薄膜トランジスタの製造方法
JPS58197775A (ja) * 1982-05-13 1983-11-17 Canon Inc 薄膜トランジスタ
GB2140203B (en) * 1983-03-15 1987-01-14 Canon Kk Thin film transistor with wiring layer continuous with the source and drain
US5242844A (en) * 1983-12-23 1993-09-07 Sony Corporation Semiconductor device with polycrystalline silicon active region and method of fabrication thereof
US5172203A (en) * 1983-12-23 1992-12-15 Sony Corporation Semiconductor device with polycrystalline silicon active region and method of fabrication thereof
US5162892A (en) * 1983-12-24 1992-11-10 Sony Corporation Semiconductor device with polycrystalline silicon active region and hydrogenated passivation layer
DE3504234A1 (de) * 1984-09-06 1986-03-13 Siemens AG, 1000 Berlin und 8000 München Feldeffekt-halbleiterbauelement
JPH01241175A (ja) * 1988-03-23 1989-09-26 Seikosha Co Ltd 非晶質シリコン薄膜トランジスタの製造方法
US8994078B2 (en) * 2012-06-29 2015-03-31 Infineon Technologies Austria Ag Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL97896C (xx) * 1955-02-18
NL293447A (xx) * 1962-05-31

Also Published As

Publication number Publication date
GB1090391A (en) 1967-11-08
ES309288A3 (es) 1966-01-01
DE1514337B1 (de) 1970-07-02
US3290569A (en) 1966-12-06

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