SE318947B - - Google Patents
Info
- Publication number
- SE318947B SE318947B SE1845/65A SE184565A SE318947B SE 318947 B SE318947 B SE 318947B SE 1845/65 A SE1845/65 A SE 1845/65A SE 184565 A SE184565 A SE 184565A SE 318947 B SE318947 B SE 318947B
- Authority
- SE
- Sweden
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US344921A US3290569A (en) | 1964-02-14 | 1964-02-14 | Tellurium thin film field effect solid state electrical devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE318947B true SE318947B (es) | 1969-12-22 |
Family
ID=23352681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE1845/65A SE318947B (es) | 1964-02-14 | 1965-02-12 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3290569A (es) |
| DE (1) | DE1514337B1 (es) |
| ES (1) | ES309288A3 (es) |
| GB (1) | GB1090391A (es) |
| SE (1) | SE318947B (es) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3445732A (en) * | 1965-06-28 | 1969-05-20 | Ledex Inc | Field effect device having an electrolytically insulated gate |
| US3351786A (en) * | 1965-08-06 | 1967-11-07 | Univ California | Piezoelectric-semiconductor, electromechanical transducer |
| US3395292A (en) * | 1965-10-19 | 1968-07-30 | Gen Micro Electronics Inc | Shift register using insulated gate field effect transistors |
| US3493785A (en) * | 1966-03-24 | 1970-02-03 | Rca Corp | Bistable circuits |
| US3424934A (en) * | 1966-08-10 | 1969-01-28 | Bell Telephone Labor Inc | Electroluminescent cell comprising zinc-doped gallium arsenide on one surface of a silicon nitride layer and spaced chromium-gold electrodes on the other surface |
| NL6611537A (es) * | 1966-08-17 | 1968-02-19 | ||
| US3480843A (en) * | 1967-04-18 | 1969-11-25 | Gen Electric | Thin-film storage diode with tellurium counterelectrode |
| US3593071A (en) * | 1969-04-04 | 1971-07-13 | Ncr Co | Pointed gate semiconductor device |
| US3627662A (en) * | 1970-02-24 | 1971-12-14 | Gte Laboratories Inc | Thin film transistor and method of fabrication thereof |
| US3657613A (en) * | 1970-05-04 | 1972-04-18 | Westinghouse Electric Corp | Thin film electronic components on flexible metal substrates |
| US3726006A (en) * | 1971-04-28 | 1973-04-10 | Us Army | Method for sintering thick-film oxidizable silk-screened circuitry |
| DE3028718C2 (de) * | 1979-07-31 | 1982-08-19 | Sharp K.K., Osaka | Dünnfilmtransistor in Verbindung mit einer Anzeigevorrichtung |
| JPS58170067A (ja) * | 1982-03-31 | 1983-10-06 | Fujitsu Ltd | 薄膜トランジスタの製造方法 |
| JPS58197775A (ja) * | 1982-05-13 | 1983-11-17 | Canon Inc | 薄膜トランジスタ |
| GB2140203B (en) * | 1983-03-15 | 1987-01-14 | Canon Kk | Thin film transistor with wiring layer continuous with the source and drain |
| US5242844A (en) * | 1983-12-23 | 1993-09-07 | Sony Corporation | Semiconductor device with polycrystalline silicon active region and method of fabrication thereof |
| US5172203A (en) * | 1983-12-23 | 1992-12-15 | Sony Corporation | Semiconductor device with polycrystalline silicon active region and method of fabrication thereof |
| US5162892A (en) * | 1983-12-24 | 1992-11-10 | Sony Corporation | Semiconductor device with polycrystalline silicon active region and hydrogenated passivation layer |
| DE3504234A1 (de) * | 1984-09-06 | 1986-03-13 | Siemens AG, 1000 Berlin und 8000 München | Feldeffekt-halbleiterbauelement |
| JPH01241175A (ja) * | 1988-03-23 | 1989-09-26 | Seikosha Co Ltd | 非晶質シリコン薄膜トランジスタの製造方法 |
| US8994078B2 (en) * | 2012-06-29 | 2015-03-31 | Infineon Technologies Austria Ag | Semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL202404A (es) * | 1955-02-18 | |||
| NL293447A (es) * | 1962-05-31 |
-
1964
- 1964-02-14 US US344921A patent/US3290569A/en not_active Expired - Lifetime
-
1965
- 1965-02-04 GB GB4941/65A patent/GB1090391A/en not_active Expired
- 1965-02-12 SE SE1845/65A patent/SE318947B/xx unknown
- 1965-02-12 ES ES0309288A patent/ES309288A3/es not_active Expired
- 1965-02-12 DE DE19651514337 patent/DE1514337B1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB1090391A (en) | 1967-11-08 |
| ES309288A3 (es) | 1966-01-01 |
| US3290569A (en) | 1966-12-06 |
| DE1514337B1 (de) | 1970-07-02 |