NL6611537A - - Google Patents

Info

Publication number
NL6611537A
NL6611537A NL6611537A NL6611537A NL6611537A NL 6611537 A NL6611537 A NL 6611537A NL 6611537 A NL6611537 A NL 6611537A NL 6611537 A NL6611537 A NL 6611537A NL 6611537 A NL6611537 A NL 6611537A
Authority
NL
Netherlands
Application number
NL6611537A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL6611537A priority Critical patent/NL6611537A/xx
Priority to DE19671614272 priority patent/DE1614272A1/de
Priority to GB37170/67A priority patent/GB1193716A/en
Priority to JP5196667A priority patent/JPS4615447B1/ja
Priority to CH1139067A priority patent/CH478457A/de
Priority to BE702692D priority patent/BE702692A/xx
Priority to SE11441/67A priority patent/SE349894B/xx
Priority to AT747767A priority patent/AT297101B/de
Priority to US660332A priority patent/US3518511A/en
Priority to FR118122A priority patent/FR1546614A/fr
Publication of NL6611537A publication Critical patent/NL6611537A/xx
Priority to ES355667A priority patent/ES355667A1/es
Priority to ES344100A priority patent/ES344100A1/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H01L29/227—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
NL6611537A 1966-08-17 1966-08-17 NL6611537A (es)

Priority Applications (12)

Application Number Priority Date Filing Date Title
NL6611537A NL6611537A (es) 1966-08-17 1966-08-17
DE19671614272 DE1614272A1 (de) 1966-08-17 1967-08-12 Halbleitervorrichtung mit mindestens einem auf einem Halbleitermaterial vom Typ A?,B? angebrachten Kontakt und Verfahren zur Herstellung einer derartigen Vorrichtung
BE702692D BE702692A (es) 1966-08-17 1967-08-14
JP5196667A JPS4615447B1 (es) 1966-08-17 1967-08-14
CH1139067A CH478457A (de) 1966-08-17 1967-08-14 Halbleitervorrichtung mit mindestens einer auf einem Halbleitermaterial vom Typ AIIBVI angebrachten Elektrode und Verfahren zur Herstellung einer derartigen Vorrichtung
GB37170/67A GB1193716A (en) 1966-08-17 1967-08-14 Improvements in and relating to Semiconductor Devices
SE11441/67A SE349894B (es) 1966-08-17 1967-08-14
AT747767A AT297101B (de) 1966-08-17 1967-08-14 Halbleitervorrichtung, insbesondere Feldeffekttransistor, bei der ein Halbleitermaterial vom Typ A<II>B<VI> angewandt wird, und Verfahren zur Herstellung einer derartigen Halbleitervorrichtung
US660332A US3518511A (en) 1966-08-17 1967-08-14 Semiconductor device having at least one contact applied to a semiconductor material of the type ii-b-vi-a and method of manufacturing such device
FR118122A FR1546614A (fr) 1966-08-17 1967-08-17 Dispositif semi-conducteur comportant au moins un contact sur un matériau semiconducteur du groupe ii-vi, et procédé pour sa fabrication
ES355667A ES355667A1 (es) 1966-08-17 1968-07-01 Metodo de fabricacion de un dispositivo semiconductor.
ES344100A ES344100A1 (es) 1966-08-17 1968-08-14 Dispositivo semiconductor.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6611537A NL6611537A (es) 1966-08-17 1966-08-17

Publications (1)

Publication Number Publication Date
NL6611537A true NL6611537A (es) 1968-02-19

Family

ID=19797428

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6611537A NL6611537A (es) 1966-08-17 1966-08-17

Country Status (11)

Country Link
US (1) US3518511A (es)
JP (1) JPS4615447B1 (es)
AT (1) AT297101B (es)
BE (1) BE702692A (es)
CH (1) CH478457A (es)
DE (1) DE1614272A1 (es)
ES (2) ES355667A1 (es)
FR (1) FR1546614A (es)
GB (1) GB1193716A (es)
NL (1) NL6611537A (es)
SE (1) SE349894B (es)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3780427A (en) * 1969-04-25 1973-12-25 Monsanto Co Ohmic contact to zinc sulfide devices
US3614551A (en) * 1969-04-25 1971-10-19 Monsanto Co Ohmic contact to zinc sulfide devices
DE3011952C2 (de) * 1980-03-27 1982-06-09 Siemens AG, 1000 Berlin und 8000 München Sperrfreier niederohmiger Kontakt auf III-V-Halbleitermaterial
EP0242902A3 (en) * 1986-03-26 1988-08-31 Raychem Limited Protection device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL257217A (es) * 1959-12-07
NL282170A (es) * 1961-08-17
US3290569A (en) * 1964-02-14 1966-12-06 Rca Corp Tellurium thin film field effect solid state electrical devices
US3379931A (en) * 1964-12-01 1968-04-23 Gen Telephone & Elect Electroluminescent translator utilizing thin film transistors

Also Published As

Publication number Publication date
US3518511A (en) 1970-06-30
ES344100A1 (es) 1968-12-16
ES355667A1 (es) 1970-01-01
AT297101B (de) 1972-03-10
DE1614272A1 (de) 1970-02-26
FR1546614A (fr) 1968-11-22
CH478457A (de) 1969-09-15
JPS4615447B1 (es) 1971-04-26
SE349894B (es) 1972-10-09
GB1193716A (en) 1970-06-03
BE702692A (es) 1968-02-14

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