CH478457A - Halbleitervorrichtung mit mindestens einer auf einem Halbleitermaterial vom Typ AIIBVI angebrachten Elektrode und Verfahren zur Herstellung einer derartigen Vorrichtung - Google Patents
Halbleitervorrichtung mit mindestens einer auf einem Halbleitermaterial vom Typ AIIBVI angebrachten Elektrode und Verfahren zur Herstellung einer derartigen VorrichtungInfo
- Publication number
- CH478457A CH478457A CH1139067A CH1139067A CH478457A CH 478457 A CH478457 A CH 478457A CH 1139067 A CH1139067 A CH 1139067A CH 1139067 A CH1139067 A CH 1139067A CH 478457 A CH478457 A CH 478457A
- Authority
- CH
- Switzerland
- Prior art keywords
- aiibvi
- producing
- type
- semiconductor
- electrode mounted
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/479—Application of electric currents or fields, e.g. for electroforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
- H01L29/227—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/064—Gp II-VI compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6611537A NL6611537A (de) | 1966-08-17 | 1966-08-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH478457A true CH478457A (de) | 1969-09-15 |
Family
ID=19797428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1139067A CH478457A (de) | 1966-08-17 | 1967-08-14 | Halbleitervorrichtung mit mindestens einer auf einem Halbleitermaterial vom Typ AIIBVI angebrachten Elektrode und Verfahren zur Herstellung einer derartigen Vorrichtung |
Country Status (11)
Country | Link |
---|---|
US (1) | US3518511A (de) |
JP (1) | JPS4615447B1 (de) |
AT (1) | AT297101B (de) |
BE (1) | BE702692A (de) |
CH (1) | CH478457A (de) |
DE (1) | DE1614272A1 (de) |
ES (2) | ES355667A1 (de) |
FR (1) | FR1546614A (de) |
GB (1) | GB1193716A (de) |
NL (1) | NL6611537A (de) |
SE (1) | SE349894B (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0037005A1 (de) * | 1980-03-27 | 1981-10-07 | Siemens Aktiengesellschaft | Sperrfreier niederohmiger Kontakt auf III-V-Halbleitermaterial und Verfahren zu seiner Herstellung |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3780427A (en) * | 1969-04-25 | 1973-12-25 | Monsanto Co | Ohmic contact to zinc sulfide devices |
US3614551A (en) * | 1969-04-25 | 1971-10-19 | Monsanto Co | Ohmic contact to zinc sulfide devices |
EP0242902A3 (de) * | 1986-03-26 | 1988-08-31 | Raychem Limited | Schutzeinrichtung |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL257217A (de) * | 1959-12-07 | |||
NL282170A (de) * | 1961-08-17 | |||
US3290569A (en) * | 1964-02-14 | 1966-12-06 | Rca Corp | Tellurium thin film field effect solid state electrical devices |
US3379931A (en) * | 1964-12-01 | 1968-04-23 | Gen Telephone & Elect | Electroluminescent translator utilizing thin film transistors |
-
1966
- 1966-08-17 NL NL6611537A patent/NL6611537A/xx unknown
-
1967
- 1967-08-12 DE DE19671614272 patent/DE1614272A1/de active Pending
- 1967-08-14 SE SE11441/67A patent/SE349894B/xx unknown
- 1967-08-14 JP JP5196667A patent/JPS4615447B1/ja active Pending
- 1967-08-14 AT AT747767A patent/AT297101B/de not_active IP Right Cessation
- 1967-08-14 GB GB37170/67A patent/GB1193716A/en not_active Expired
- 1967-08-14 BE BE702692D patent/BE702692A/xx unknown
- 1967-08-14 CH CH1139067A patent/CH478457A/de not_active IP Right Cessation
- 1967-08-14 US US660332A patent/US3518511A/en not_active Expired - Lifetime
- 1967-08-17 FR FR118122A patent/FR1546614A/fr not_active Expired
-
1968
- 1968-07-01 ES ES355667A patent/ES355667A1/es not_active Expired
- 1968-08-14 ES ES344100A patent/ES344100A1/es not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0037005A1 (de) * | 1980-03-27 | 1981-10-07 | Siemens Aktiengesellschaft | Sperrfreier niederohmiger Kontakt auf III-V-Halbleitermaterial und Verfahren zu seiner Herstellung |
Also Published As
Publication number | Publication date |
---|---|
ES344100A1 (es) | 1968-12-16 |
US3518511A (en) | 1970-06-30 |
ES355667A1 (es) | 1970-01-01 |
AT297101B (de) | 1972-03-10 |
GB1193716A (en) | 1970-06-03 |
BE702692A (de) | 1968-02-14 |
NL6611537A (de) | 1968-02-19 |
DE1614272A1 (de) | 1970-02-26 |
FR1546614A (fr) | 1968-11-22 |
JPS4615447B1 (de) | 1971-04-26 |
SE349894B (de) | 1972-10-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CH469358A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung | |
CH500591A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Vorrichtung | |
AT295128B (de) | Vorrichtung zur Herstellung von Hohlkörpern mit einem Hals | |
CH486570A (de) | Vorrichtung zur Herstellung von aus mindestens zwei verschiedenen Polymeren bestehenden Verbundfäden | |
CH457627A (de) | Halbleiterbauelement mit einem Metallkontakt und Verfahren zur Herstellung eines Halbleiterbauelementes | |
CH539340A (de) | Halbleiteranordnung mit einem Halbleiterwiderstand und Verfahren zur Herstellung einer derartigen Anordnung | |
CH477765A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung | |
DE1648934B2 (de) | Vorrichtung zur schrittweisen foerderung einer anzahl von auffanggefaessen durch mindestens eine fuellstation | |
CH505470A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung und gemäss diesem Verfahren hergestellte Halbleitervorrichtung | |
CH491660A (de) | Verfahren und Vorrichtung zum Abtrennen mindestens einer der Komponenten aus einer aus mehreren Komponenten bestehenden Flüssigkeit | |
CH497048A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung | |
CH486777A (de) | Verfahren zur Herstellung einer Vorrichtung mit Feldeffekttransistoren mit isolierten Torelektroden | |
AT288045B (de) | Verfahren und vorrichtung zur herstellung von kohleformkoern hoher dichte | |
AT324421B (de) | Halbleitervorrichtung mit einem lateralen transistor und verfahren zur herstellung einer solchen | |
AT301720B (de) | Verfahren und Vorrichtung zur Herstellung einer Kunststoffschicht auf elektrisch leitenden Gegenständen | |
AT339963B (de) | Verfahren zur herstellung einer halbleiteranordnung mit einem halbleiterkorper mit mindestens einem feldeffekttransistor mit isolierter torelektrode | |
CH447396A (de) | Verfahren und Vorrichtung zur Herstellung einer Maske für die Fertigung von Halbleiter-Schaltelementen | |
AT309803B (de) | Verfahren und Vorrichtung zur Herstellung von Rohren aus thermoplastischen Materail | |
AT276487B (de) | Verfahren zur Herstellung einer Kontaktschicht für Halbleitervorrichtungen und nach diesem Verfahren erhaltene Halbleitervorrichtung | |
CH465243A (de) | Verfahren und Vorrichtung zur Herstellung einer Fotomaske für elektrische Bauelemente | |
AT253203B (de) | Verfahren und Vorrichtung zur Herstellung von mit einem Füllstoff gefüllten hohlen Bauelementen | |
CH449122A (de) | Verfahren zur Herstellung einer integrierten Halbleiterschaltung und nach dem Verfahren hergestellte Halbleiterschaltung | |
CH478457A (de) | Halbleitervorrichtung mit mindestens einer auf einem Halbleitermaterial vom Typ AIIBVI angebrachten Elektrode und Verfahren zur Herstellung einer derartigen Vorrichtung | |
AT320736B (de) | Halbleitervorrichtung mit einem Halbleiterkörper, der mindestens einen Hochfrequenz-Leistungstransistor enthält, und Verfahren zur Herstellung derselben | |
CH455258A (de) | Vorrichtung zur Herstellung eines mit mindestens einer Markierung versehenen Kunststoffbandes |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |