CH497048A - Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung - Google Patents
Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte HalbleitervorrichtungInfo
- Publication number
- CH497048A CH497048A CH1233368A CH1233368A CH497048A CH 497048 A CH497048 A CH 497048A CH 1233368 A CH1233368 A CH 1233368A CH 1233368 A CH1233368 A CH 1233368A CH 497048 A CH497048 A CH 497048A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor device
- manufacturing
- device manufactured
- manufactured
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3814467 | 1967-08-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH497048A true CH497048A (de) | 1970-09-30 |
Family
ID=10401504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1233368A CH497048A (de) | 1967-08-18 | 1968-08-16 | Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung |
Country Status (10)
Country | Link |
---|---|
US (1) | US3596347A (de) |
AT (1) | AT296390B (de) |
BE (1) | BE719689A (de) |
BR (1) | BR6801562D0 (de) |
CH (1) | CH497048A (de) |
DE (1) | DE1764847B2 (de) |
ES (1) | ES357288A1 (de) |
FR (1) | FR1577669A (de) |
GB (1) | GB1233545A (de) |
NL (1) | NL6811526A (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1244225A (en) * | 1968-12-31 | 1971-08-25 | Associated Semiconductor Mft | Improvements in and relating to methods of manufacturing semiconductor devices |
US3590471A (en) * | 1969-02-04 | 1971-07-06 | Bell Telephone Labor Inc | Fabrication of insulated gate field-effect transistors involving ion implantation |
US4005450A (en) * | 1970-05-13 | 1977-01-25 | Hitachi, Ltd. | Insulated gate field effect transistor having drain region containing low impurity concentration layer |
US3855007A (en) * | 1970-11-13 | 1974-12-17 | Signetics Corp | Bipolar transistor structure having ion implanted region and method |
GB1355806A (en) * | 1970-12-09 | 1974-06-05 | Mullard Ltd | Methods of manufacturing a semiconductor device |
US3700978A (en) * | 1971-03-18 | 1972-10-24 | Bell Telephone Labor Inc | Field effect transistors and methods for making field effect transistors |
US3775191A (en) * | 1971-06-28 | 1973-11-27 | Bell Canada Northern Electric | Modification of channel regions in insulated gate field effect transistors |
SE361232B (de) * | 1972-11-09 | 1973-10-22 | Ericsson Telefon Ab L M | |
US3895975A (en) * | 1973-02-13 | 1975-07-22 | Communications Satellite Corp | Method for the post-alloy diffusion of impurities into a semiconductor |
US3947866A (en) * | 1973-06-25 | 1976-03-30 | Signetics Corporation | Ion implanted resistor having controlled temperature coefficient and method |
US3873372A (en) * | 1973-07-09 | 1975-03-25 | Ibm | Method for producing improved transistor devices |
US3959025A (en) * | 1974-05-01 | 1976-05-25 | Rca Corporation | Method of making an insulated gate field effect transistor |
US4173818A (en) * | 1978-05-30 | 1979-11-13 | International Business Machines Corporation | Method for fabricating transistor structures having very short effective channels |
DE3003391C2 (de) * | 1980-01-31 | 1984-08-30 | Josef Dipl.-Phys. Dr. 8041 Fahrenzhausen Kemmer | Strahlungsdetektor mit einem passivierten pn-Halbleiterübergang |
JPS583264A (ja) * | 1981-06-30 | 1983-01-10 | Fujitsu Ltd | 高耐圧半導体集積回路およびその製造方法 |
DE3138747A1 (de) * | 1981-09-29 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Selbstsperrender feldeffekt-transistor des verarmungstyps |
GB2215515A (en) * | 1988-03-14 | 1989-09-20 | Philips Electronic Associated | A lateral insulated gate field effect transistor and a method of manufacture |
US5169796A (en) * | 1991-09-19 | 1992-12-08 | Teledyne Industries, Inc. | Process for fabricating self-aligned metal gate field effect transistors |
US9324830B2 (en) | 2014-03-27 | 2016-04-26 | International Business Machines Corporation | Self-aligned contact process enabled by low temperature |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3328210A (en) * | 1964-10-26 | 1967-06-27 | North American Aviation Inc | Method of treating semiconductor device by ionic bombardment |
NL6604962A (de) * | 1966-04-14 | 1967-10-16 | ||
US3445926A (en) * | 1967-02-28 | 1969-05-27 | Electro Optical Systems Inc | Production of semiconductor devices by use of ion beam implantation |
-
1967
- 1967-08-18 GB GB3814467A patent/GB1233545A/en not_active Expired
-
1968
- 1968-08-14 NL NL6811526A patent/NL6811526A/xx unknown
- 1968-08-16 BR BR201562/68A patent/BR6801562D0/pt unknown
- 1968-08-16 ES ES357288A patent/ES357288A1/es not_active Expired
- 1968-08-16 CH CH1233368A patent/CH497048A/de not_active IP Right Cessation
- 1968-08-17 DE DE1764847A patent/DE1764847B2/de not_active Ceased
- 1968-08-19 US US753449A patent/US3596347A/en not_active Expired - Lifetime
- 1968-08-19 BE BE719689D patent/BE719689A/xx unknown
- 1968-08-19 FR FR1577669D patent/FR1577669A/fr not_active Expired
- 1968-08-19 AT AT805168A patent/AT296390B/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
FR1577669A (de) | 1969-08-08 |
AT296390B (de) | 1972-02-10 |
DE1764847A1 (de) | 1972-02-17 |
GB1233545A (de) | 1971-05-26 |
BE719689A (de) | 1969-02-19 |
NL6811526A (de) | 1969-02-20 |
ES357288A1 (es) | 1970-03-16 |
BR6801562D0 (pt) | 1973-02-27 |
US3596347A (en) | 1971-08-03 |
DE1764847B2 (de) | 1974-01-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |