GB2215515A - A lateral insulated gate field effect transistor and a method of manufacture - Google Patents
A lateral insulated gate field effect transistor and a method of manufacture Download PDFInfo
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- GB2215515A GB2215515A GB8806014A GB8806014A GB2215515A GB 2215515 A GB2215515 A GB 2215515A GB 8806014 A GB8806014 A GB 8806014A GB 8806014 A GB8806014 A GB 8806014A GB 2215515 A GB2215515 A GB 2215515A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 230000005669 field effect Effects 0.000 title claims description 40
- 238000000034 method Methods 0.000 title claims description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 239000012535 impurity Substances 0.000 claims abstract description 15
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 60
- 238000001465 metallisation Methods 0.000 description 21
- 238000005530 etching Methods 0.000 description 14
- 239000011810 insulating material Substances 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 230000000873 masking effect Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
A transistor has a semiconductor body (1) having a first region (2) of one conductivity type adjacent a surface of the semiconductor body (1), source and drain regions (3 and 4) of the opposite conductivity type are formed spaced-apart within the first region (2) adjacent the given surface, a lowly doped extension region (5) extends beneath an insulating layer (6) on the given surface from the drain region (4) towards the source region (3), an insulated gate (7) is provided on the given surface (1a) for defining a gateable connection of the source and drain regions (3 and 4), and a further region (10) of the opposite conductivity type is provided adjacent the given surface beneath the insulating layer (6) so as to adjoin the lowly doped extension region (5) remote from the drain region (4) to define a conduction channel area (1) between the source (3) and the further region (10) beneath the insulated gate (7) so that the gateable connection of the source and drain regions is provided between the source and further regions (3 and 10). In the manufacture of the transistor, the insulated gate (7) and insulating layer (6) are used as a mask for the introduction of the impurities to form the source, drain and further regions (3, 4 and 10). Two or more further regions may be provided between the source and drain. The invention may be applied to a lateral insulated gate bipolar transistor structure. <IMAGE>
Description
A LATERAL INSULATED GATE FIELD EFFECT TRANSISTOR
AND A METHOD OF MANUFACTURING SUCH A TRANSISTOR
This invention relates to a lateral insulated gate field effect transistor and a method of manufacturing such a transistor.
Lateral insulated gate field effect transistors are well known which comprise a semiconductor body having a first region of one conductivity type adjacent a given surface of the semiconductor body, source and drain regions of the opposite conductivity type formed space-apart within the first region and adjacent the given surface, a lowly doped extension region of the opposite conductivity type adjoining the drain region and an insulated gate provided on the given surface for defining a gateable connection of the source and drain regions.
The provision of such a lowly doped extension region adjoining the drain region of an insulated gate field effect transistor enables relatively high source-drain voltages to be applied without electrical breakdown to lateral insulated gate field effect transistors where the majority current flow is parallel rather than perpendicular to the given surface of the semiconductor body. The use of such lowly doped extension regions is described in many publications, see for example EP-A-70101 and Siemens Forschungs-und
Entwicklungs Berichte Bd 9(1980) Nr. 4 pages 190 to 194.
Although the inclusion of such a lowly doped extension region is desirable, the use of such a lowly doped extension region means that it is no longer easy to use the insulated gate as a mask to introduce the impurities to form the source and drain regions so that the source and drain regions are auto-aligned to the insulated gate and, if a non-auto-aligned method is used, provision has to be made in the dimensions of the device for mask alignment tolerances.
According to one aspect of the present invention, there is provided an insulated gate field effect transistor comprising a semiconductor body having a first region of one conductivity type adjacent a given surface of the semiconductor body, source and drain regions of the opposite conductivity type formed spaced-apart within the first region and adjacent the given surface, a lowly doped extension region of the opposite conductivity type adjoining the drain region and extending beneath an insulating layer on the given surface from the drain region towards the source region and an insulated gate provided on the given surface for defining a gateable connection of the source and drain regions, characterised in that a further region of the opposite conductivity type is provided adjacent the given surface beneath the insulating layer and adjoining the lowly doped extension region remote from the drain region to define a conduction channel area between the source region and the further region beneath the insulated gate so that the gateable connection of the source and drain regions is provided between the source and further regions.
According to a second aspect of the present invention there is provided a method of manufacturing a lateral insulated gate field effect transistor, which method comprises providing a semiconductor body having a first region of one conductivity type adjacent a given surface of the semiconductor body, introducing impurities to form a lowly doped extension region of the opposite conductivity type adjacent the given surface within the first region, defining an insulated gate on the given surface spaced from the lowly doped extension region, introducing impurities using the insulated gate as a mask to form source and drain regions of the opposite conductivity type adjacent the given surface within the first region with the drain region adjoinging the lowly doped extension region so that the insulated gate defines a gateable connection of the source and drain regions, characterised by defining an insulating layer on the given surface within the periphery of the lowly doped extension region and spaced from the insulated gate and introducing the impurities to form the source and drain regions using the insulated gate and the insulating layer as a mask so as to form a further region of the opposite conductivity type which adjoins the lowly doped extension region remote from the drain region and defines a conduction channel area beneath the insulated gate between the source region and the further region so that the gateable connection of the source and drain regions is provided between the source and further regions.
An insulated gate field effect transistor in accordance with the invention may thus be formed in an auto-aligned manner so that the the properties of the insulated gate field effect transistor do not depend upon mask tolerances and are therefore more reproduceable. Furthermore, in use of an insulated gate field effect transistor embodying the invention the voltage at the further region follows the voltage applied to the drain region.
Thus at relatively low voltages the drain region is resistively coupled to the further region by the lowly doped extension region, whilst at higher voltages the relatively lowly doped extension region becomes fully depleted of free charge carriers so that drain and further regions are coupled by a depletion region with the voltage difference between the drain and further regions being determined by the separation of the drain and further regions for a given doping and thickness of the lowly doped extension region.
Thus, by selecting the separation of the drain and further regions appropriately, which in a method embodying the invention can be done simply by selecting the dimensions along the given surface of the insulating layer, the voltage at the further region can be maintained, for a given maximum expected drain voltage, below that at which breakdown would occur at the pn junction between the further region and the second region.When an appropriate gate voltage is applied to the insulated gate of an insulated gate field effect transistor in accordance with the invention a conduction channel, an inversion channel in the case of an enhancement or normally off transistor, is provided in the conduction channel area between the source and further regions enabling charge carriers to be injected from the source region via the conduction channel into the further region and then to be swept through the depletion region to the drain region.
Embodiments of the invention will now be described, by way of example, with reference to the accompanying drawings, in which;
Figure 1 is a cross-se9tional view of part of a semiconductor body illustrating a stage in a first embodiment of a method in accordance with the invention for manufacturing an insulated gate field effect transistor in accordance with the invention;
Figure 2 is a cross-sectional view similar to Figure 1 illustrating an insulated gate field effect transistor manufactured using the first embodiment of a method in accordance with the invention;
Figure 3 is a cross-sectional view of a portion of part of a semiconductor body illustrating a stage in a second embodiment of a method in accordance with the invention for manufacturing an insulated gate field effect transistor in accordance with the invention;;
Figure 4 is a cross-sectional view similar to Figure 1 illustrating an insulated gate field effect transistor manufactured using the second embodiment of a method in accordance with the invention;
Figure 5 is a cross-sectional view of part of a semiconductor body illustrating a further embodiment of an insulated gate field effect transistor in accordance with the invention; and
Figure 6 is a schematic plan view illustrating one possible geometrical arrangement for an insulated gate field effect transistor in accordance with the invention.
It should, of course, be understood that the Figures are merely schematic and are not to scale, various dimensions, especially thickness having been relatively exaggerated or reduced in the interests of clarity.
Referring now to the drawings, there are illustrated various embodiments of insulated gate field effect transistors in accordance with the invention. In each case, the insulated gate effect transistor comprises a semiconductor body 1 having a first region 2 of one conductivity type adjacent a given surface la of the semiconductor body 1. Source and drain regions 3 and 4 of the opposite conductivity type are formed spaced-apart within the first region 2 and adjacent the given surface la and a lowly doped extension region 5 of the opposite conductivity type adjoins the drain region 4 and extends from the drain region 4 towards the source region 3 beneath an insulating layer 6.An insulated gate 7 provided on the given surface la defines a gateable connection of the source and drain regions 3 and 4 of the insulated gate field effect transistor. In acordance with the invention, a further region 10 of the one conductivity type provided adjacent the given surface la beneath the insulating layer 6 adjoins the lowly doped extension region 5 remote from the drain region 4 to define a conduction channel area 11 between the source and further regions 3 and 10 beneath the insulated gate 7 so that the gateable connection of the source and drain regions 3 and 4 is provided between the source and further regions 3 and 10.
A first embodiment of an insulated gate field effect device in accordance with the invention will now be described in greater detail with reference to Figures 1 and 2 in which the dashed line A indicates a central axis of symmetry.
Referring first to Figure 1, the semiconductor body 1 comprises a lowly doped n-type monocrystalline silicon region 100 which may be an epitaxial layer having a dopant concentration of about 7 x 1015 atoms cm~3 provided on a highly doped monocrystalline silicon substrate 100a.
After cleaning to remove surface contaminants and to grow a protective layer of a thermal silicon oxide, p-type impurities, for example boron, are locally implanted and/or diffused into the semiconductor body 1 via the given surface 1a using an appropriate mask to provide the first region 2 as a p-type well having, for example, a dopant concentration adjacent the surface of about 1.5 x 1016 atoms cm~3.
Again using conventional masking techniques, n-type impurities are locally introduced into the semiconductor body via the given surface la so as to form the lowly doped extension region 5 within the p well or first region 2. The dose used to form the lowly doped extension region 5 is sufficiently low that the lowly doped extension region 5 forms a RESURF (REduced SUrface Field) region which, as described in detail, for example in a paper entitled 'High voltage thin layer devices (RESURF devices)' by J.A.Appel et al published in Philips Journal of Research, Vol. 35 No. 1 1980 at pages 1-13, is a region which is sufficiently thin and sufficiently lowly doped so that, under reverse-bias, the region becomes fully depleted of free charge carriers thereby spreading the field lines laterally so as to reduce the surface field, prior to the reverse breakdown voltage of the pn junction being reached. As indicated in the aforementioned paper in order to function as a RESURF region, the product Nd of the thickness (or depth) d in cm and the doping concentration N in atoms cm~3 of the region should be of the order of 2 x 1012 atoms cm~2. Typically, the lowly doped extension region may have a dopant concentration adjacent the surface of about 2 x 1016 atoms cm~3.
After formation of the lowly doped extension region 5, silicon dioxide is thermally grown on the given surface la to form a relatively thick, #for example, 1000 Angstroms, field oxide layer.
The field oxide layer is then patterned or defined using conventional photolithographic and etching techniques to provide a layer of field oxide 60 surrounding the periphery of the area in which the insulated gate field effect transistor is being formed and also to provide the insulating layer 6 which overlies a central portion of the lowly doped extension region 5. A relatively thin layer of gate oxide is then grown by a conventional thermal process on the given surface la. Polycrystalline silicon is then deposited onto the gate oxide layer and appropriately doped, usually using phosphorus, to provide the necessary conductivity. A covering insulating layer, for example of silicon oxide or silicon nitride, is deposited onto the doped polycrystalline silicon layer.
Alternatively of course, an oxide layer may be grown by thermal oxidation of part of the polycrystalline silicon. The gate oxide layer, doped polycrystalline silicon layer and covering insulating layer are patterned or defined using conventional photolithographic and etching techniques to define the insulated gate 7 and a protective insulating layer cover 71 for the insulated gate 7.
It should, of course, be appreciated that other conductive materials could be used for the conductive gate layer, for example a metal could be used instead of the doped polycrystalline silicon.
After deposition of a protective scatter oxide, n-type impurities, for example arsenic or phosphorus, are introduced into the semiconductor body 1 via the given surface 1a using the insulated gate 7 and field oxide 60, 6 as a mask so as to form the source and drain regions 3 and 4 and the further region 10. By this process, the source region 3 and the further region 10 are both auto-aligned to the insulated gate 7 so that the length of the conduction channel area 11 is defined by the lateral diffusion beneath the insulated gate 7 of the dopants introduced to form the source and further regions 3 and 10. The inner periphery 10a of the further region 10 and the periphery 4a of the drain region 4 are auto-aligned to the insulating layer 6 and are arranged to overlap the lowly doped extension 5.The extent of the lowly doped region 5 between the inner periphery 10a of the further region 10 and the periphery 4a of the drain region 4 is thus defined by the extent in that direction of the insulating layer 6. The source, drain and further regions 3, 4 and 10 may have, for example, a dopant concentration adjacent the surface of about 1 x 1020 atoms cm 3.
After conventional cleaning of the surface, a further layer of insulating material 12 is deposited by a conventional chemical deposition technique to cover the entire surface.
Windows may then be opened using conventional masking and photolithographic techniques to enable metallisation to contact the source and drain regions 3 and 4 and to provide connection to the insulated gate 7. Alternatively, as indicated in Figure 2, an anisotropic etching technique, for example a plasma etching technique, may be used to etch back the insulating material layer 12 using the silicon oxide or silicon nitride insulating layer cover 71 as an etch stop so that the conductive surface 7b of the insulated gate 7 is not exposed by the anisotropic etching. In this example, the area over the further region 10 is masked during the anisotropic etching so that the further region 10 remains covered by the insulating material layer 12.Such an anisotropic etching technique leaves fillets or spacers 12a of insulating material on side walls 7a of the insulated gate 7 and on side walls 60a, 6a of the field oxide pattern. Metallisation, for example aluminium, may be deposited and patterned to define contacts 13 and 14 to the source and drain regions, respectively, with the spacers 12a on the side walls 7a of the insulated gate 7 serving to isolate the insulated gate 7 from the metallisation 13, 14.
As shown in Figure 2, the source metallisation 13 may extend up onto the field oxide 60 and the drain metallisation 14 may similarly extend up onto the insulating layer 6 so as to provide a field plating effect.
In use of the insulated gate field effect transistor shown in
Figure 2, when the voltages applied to the source and drain metallisations 13 and 14 are very small, the lowly doped extension region 5 provides a resistive connection between the drain region 4 and the further region 10. At higher operational voltages, the lowly doped extension region 5 becomes fully depleted of free charge carriers and the depletion region of the drain region 4 extends to the further region 10 so that the further region 10 is coupled to the drain region 4 by the depletion region.The voltage at the further region 10 will thus follow the voltage at the drain region 4 and will be at a voltage lower than the voltage applied to the drain region 4, the difference in voltage being determined by the separation R by the lowly doped extension region 5 of the drain region 4 and the further region 10 and also by the doping and thickness of the lowly doped extenion region 5 which will determine when the lowly doped extension region 5 becomes fully depleted so that the depletion region couples the further region 10 to the drain region 4.Thus, by selecting the separation of the drain and further regions 4 and 10 by selecting the dimensions along the given surface la of the insulating layer 6, the insulated gate field effect transistor can be designed so that, for a given maximum expected drain voltage, the voltage drop along the depletion region to the further region 10 is sufficient that the reverse-biassing voltage across the pn junction 10b between the first region or well 2 and the further region 10 is below the breakdown voltage of the pn junction 10b.When an appropriate gate voltage is applied to the insulated gate 7, an inversion channel is induced in the conduction channel area 11 between the source region 3 and the further region 10 enabling charge carriers, in this example electrons, to be injected from the source region 4 via the inversion channel 11 into the further region 10 from whence the charge carriers are swept through the depletion region coupling the further region 10 and the drain region 4 to the drain region 4.
Thus a conductive path is provided between the source region 3 and the drain region 4 via the gateable connection between the source and further regions 3 and 10 and via the depletion region which extends through the lowly doped extension region 5 to couple the drain and further regions 4 and 10.
Figures 3 and 4 illustrate a modified version of the insulated gate field effect transistor.
As will be appreciated from a comparison of Figures 2 and 4, the insulated gate field effect transistor is very similar to that shown in Figure 2 with the exception that the field oxide pattern is formed using a local oxidation of silicon (LOCOS) technique. The area of the insulating material layer 12 over the further region 10 is again masked during the anisotropic etching step.
In view of the similarities with the arrangement described with respect to Figures 1 and 2, the arrangement of Figures 3 and 4 will only be briefly described with reference to those areas where the method used differs.
Thus, after introduction of the impurities to form the p-well or first region 2, a silicon nitride mask is deposited and defined on the given surface la. With the area at the periphery of the region in which the insulated gate effect transistor is being defined masked by a subsequent photoresist mask, the n-type impurities are introduced to form the lowly doped extension region 5. The photoresist mask is then removed and a thermal oxidation process carried out as is known in the art so that the given surface la of the semiconductor body is locally oxidised in those areas not protected by the silicon nitride mask so as to define the peripheral field oxide 60' and the insulating layer 6'. The lowly doped extension region 5 is thus self-aligned to the insulating layer 6.
After removal of the silicon nitride mask, the method proceeds as described above with reference to Figures 1 and 2. Thus, after deposition of the insulating material layer 12, the surface of the insulating material layer 12 overlying the further region 10 is masked so that the anisotropic etching does not expose the surface of the further region 10. The metallisation can then be patterned and defined to form the source and drain metallisation 13 and 14 as before. Also if a window is opened in the insulating layer 7a using appropriate conventional masking and photolithographic techniques prior to depositing the metallisation a field plate 17 may be provided extending from the insulated gate 7 over the remaining portion of the insulating material layer 12a and the insulating layer 6 towards the drain region 4.
The insulated gate field effect transistor shown in Figure 4 operates in a manner similar to that described in Figures 1 and 2, the method used to manufacture the insulated gate field effect transistor shown in Figure 4 having the advantage that the lowly doped extension region 5 is auto-aligned to the subsequently formed insulating layer 6 by use of the LOCOS technique.
Figure 5 illustrates yet a further insulated gate field effect transistor in accordance with the invention. As shown in Figure 5, the insulated gate field effect transistor is similar in structure to that shown in Figure 2, but has two or more further regions 10 connected together via the lowly doped extension region 5 so as to provide a conductive path from the innermost further region 10a to the drain region 4. As will be appreciated from the above, the number of further regions 10 provided is defined merely by the appropriate patterning of the insulating layer 6.
The provision of two (or more) further regins 10 enables, as will be appreciated by those skilled in the art of providing floating ring edge termination systems for semiconductor devices (see for example EP-A-182422), a larger voltage drop from the drain region to the inner(most) further region than can be obtained with a single further region. Thus, by providing additional further regions higher voltages can be catered for whilst still enabling the voltage at the inner(most) further region 10 to be below the breakdown voltage. It may also be possible to vary the dimensions and/or separations of the further regions 10, for example to vary the width and separation as in E-A-182422 with the widest further region being adjacent the drain region 4.
Otherwise, the transistor shown in Figure 5 is manufactured in the same way as the transistor shown in Figure 2. Of course, two or more further regions can be provided in the transistor structure shown in Figure 4 by appropriately redefining the silicon nitride mask used for the LOCOS oxidation.
An insulated gate field effect transistor in accordance with the invention may have any desired geometry when viewed in plan, that is when viewed perpendicular to the given surface la. Figure 6 illustrates schematically the given surface la of a device in accordance with the invention with surface features such as insulating layers 6, 60, insulated gate 7 and metallisation omitted in interests of clarity. Thus, as can be seen from Figure 6, the device has a square (with rounded corners) geometry with all the regions being concentric about the central drain region 4.Although the lowly doped extension region 5 is shown as'a solid annular region, it may be possible by appropriate redefinition of the insulating layer 6 to define the lowly doped extension region as discrete areas interconnecting the drain region 4 and the further region(s) 10.
Although in the arrangements described above and shown in the
Figures, the insulating material overlying the further region(s) 10 is masked during the anisotropic etching step, this need not necessarily be the case. Thus, as indicated in phantom lines in
Figure 2, the anisotropic etching may be allowed to expose the surface of the further region 10 and during patterning of the metal deposited to form the source, gate and drain metallisation a metal contact 15 (again shown in phantom lines in Figure 2) may be provided on the further region(s) 10 although no electrical connection would be made to the contact 15.
It should, of course, be appreciated that where the concentric geometry shown in Figure 6 is adopted, it may be necessary to provide breaks in the surrounding metallisation to enable contact to the drain region 4. In such circumstances the necessary breaks may be provided by masking a strip of the insulating layer 12 prior to the etching step so that after the surfaces of the source and drain regions 3 and 4 (and possibly also the further region 10) have been exposed, a strip of insulating material radiates outwardly from the drain region over the further region 10, the insulate gate 7 and the source region 3 providing a path along which the drain metallisation may extend insulated from the source and gate metallisation (and contact 15, if provided).Also, as indicated by the phantom lines in Figure 6, the source region 3, insulated gate 7 and further region 10 need not be formed as complete annuli but could have aligned gaps covered by insulating material providing a path for the drain metallisation. Such an arrangement has the advantage that the field oxide pattern can be used to define the extent of the source region, insulated gate and further region(s) by appropriate modification of the field oxide mask and no masking of the insulating layer 12 prior to anisotropic etching is then required.
In addition, although in the arrangements described above and shown in the Figures, the insulated gate structure 7 is protected by an insulating layer cover 71, such an insulating cover need not necessarily be provided where it is not necessary for metallisation, for example drain metallisation, to extend over the insulated gate 7. Thus, the anisotropic etching may be allowed, by omitting the insulating layer cover 71, to expose the surface 7b of the conductive gate layer, that is the doped polycrystalline silicon layer in the examples given above.Such exposure of the insulated gate surface 7b may be possible for example where the field oxide pattern is defined or the insulating layer 12 masked during the subsequent etching so that an insulating material strip extends over the source, insulated gate and further regions to provide a path for the drain metallisation insulated from the source, insulated gate and further regions or, for example, where a linear geometry is used, that is with the source, insulated gate and drain arranged in a line, so that there is no need for metallisation to cross over underlying regions or gates.
Once the surface areas of the source and drain regions 3 and 4 (possibly also the surface of the insulated gate and/or of the further region 10) have been exposed, a self-aligned silicide process may be used so as to enable better contact to the subsequent metallisation. Thus, a layer of titanium may be sputter deposited onto the surface and then annealed in a nitrogen containing atmosphere. This process results in the formation of a silicide layer over the exposed silicon areas but because of the competing reaction with the nitrogen ambient in a titanium nitride layer on the silicon oxide surfaces. The titanium nitride area may then be selectively removed using a known process, leaving a silicide layer on each of the exposed silicon surface areas.
Metallisation may then be deposited as described above.
To take a particular example, with the arrangement illustrated in Figure 1 and 2 and a surface geometry similar to that shown in
Figure 6, using the surface dopant concentrations given as examples in the aforegoing description, an insulated gate field effect transistor capable of withstanding a source-drain voltage of 50 volts may be obtained by, for example, defining the lowly doped extension region 5 as an annulus (square with rounded corners) using a mask window having a width (along the surface la) of about 5.5 micrometres with a central opening of a width of about 1 micrometre. Of course, the lowly doped extension region 5 need not necessarily be annular but could be a solid region without a central aperture.
In such an example, the field oxide is defined so as to provide the insulating layer 6 as an annulus concentric with and lying wholly within the lowly doped extension region so as to have a width of about 3.5 micrometres and the insulated gate 7 is defined so as to similarly be of annular shape with a width of about 2 micrometres and spaced apart two micrometres from the insulating layer 6 so that two micrometre wide windows are provided through which the impurities are introduced to form the source, drain and further regions 3, 4 and 10 which may be of about the same thickness or depth as the lowly doped extension region 5 and is typicatly in the range of about 0.2 micrometres to about 0.3 micrometres. The reverse voltage withstanding capabilities may be adjusted simply by altering the width of the insulating layer 6 whilst keeping all other dimensions and dopings constant.Thus, if for a given doping and depth of the lowly doped extension region 5 the width of the insulating layer 6 was reduced, then the reverse-voltage between the source and drain regions 3 and 4 which could be reached before breakdown would be reduced whereas if the width of the insulating layer 6 was increased, then the reverse-voltage between the source and drain regions 3 and 4 which could be reached before breakdown, would be increased. To take an example with the above given dimensions and dopings, then a reduction in the width of the insulating layer 6 to 3.0 micrometres would reduce the maximum reverse biassing voltage which could be withstood from 50 volts to 46 volts.
Although in the arrangement shown in Figure 6, the insulated gate field effect transistor is symmetric about the axis A through the drain region 4, the transistor could, if desired, be symmetric about the source region 3 or a linear arrangement could be used.
Such alternative arrangements may however require additional edge termination arrangements such as field plates and/or floating or
Kao's ring systems to ensure that breakdown does not occur at the exposed drain region. The invention may be applied to a lateral insulated gate bipolar transistor structure, that is where a p-type region is provided adjacent the given surface adjoining the drain region 4 so as to provide conductivity modulation of the conduction channel areas. Also by appropriate doping of the channel area 11, the insulated gate field effect transistor may be a normally on (depletion) rather than a normally off (enhancement) mode device.
Of course, the conductivity types given in the examples described above may be reversed. Furthermore, an insulated gate field effect transistor in accordance with the invention may be integrated into the semiconductor body with other devices. Thus, for example, one or more insulated gate field effect transistors in accordance with the invention may be formed in the same semiconductor body as a power device such as a vertical power MOSFET with the p-well or second region 2 providing the necessary junction isolation.
From reading the present disclosure, other modifications will be apparent to persons skilled in the semiconductor art for example persons skilled in the design, manufacture and/or use of semiconductor devices. Although claims have been formulated in this application to particular combinations of features, it should be understood that the scope of the disclosure of the present application also includes any novel feature or novel combination of features disclosed herein either explicitly or implicitly or any generalisation or modification of that feature or of one or more of those features whether or not it relates to the same invention as presently claimed in any claim. The applicants hereby give notice that new claims to such features and/or combinations of such features may be formulated during the prosecution of the present application or of any further application derived therefrom.
Claims (10)
1. A lateral insulated gate field effect transistor comprising a semiconductor body having a first region of one conductivity type adjacent a given surface of the semiconductor body, source and drain regions of the opposite conductivity type formed spaced-apart within the first region and adjacent the given surface, a lowly doped extension region of the opposite conductivity type adjoining the drain region and extending beneath an insulating layer on the given surface from the drain region towards the source region and an insulated gate provided on the given surface for defining a gateable connection of the source and drain regions, characterised in that a further region of the opposite conductivity type is provided adjacent the given surface beneath the insulating layer and adjoining the lowly doped extension region remote from the drain region to define a conduction channel area between the source region and the further region beneath the insulated gate so that the gateable connection of the source and drain regions is provided between the source and further regions.
2. A transistor according to Claim 1, wherein two or more further regions are provided between the source and drain regions and are connected by the lowly doped extension region so that the conduction channel area is defined beneath the insulated gate between the source region and one further region and the gateable connection of the source and drain regions is provided between the source region and the said one further region.
3. A transistor according to Claim 1 or 2, wherein a field plate extends from the insulated gate over the insulating layer towards the drain region.
4. An insulated gate field effect transistor substantially as hereinbefore described with reference to and/or as illustrated in the accompanying drawings.
5. A method of manufacturing a lateral insulated gate field effect transistor, which method comprises providing a semiconductor body having a first region of one conductivity type adjacent a given surface of the semiconductor body, introducing impurities to form a lowly doped extension region of the opposite conductivity type adjacent the given surface within the first region, defining an insulated gate on the given surface spaced from the lowly doped extension region, introducing impurities using the insulated gate as a mask to form source and drain regions of the opposite conductivity type adjacent the given surface within the first region with the drain region adjoining the lowly doped extension region so that the insulated gate defines a gateable connection of the source and drain regions, characterised by defining an insulating layer on the given surface within the periphery of the lowly doped extension region and spaced from the insulated gate and introducing the impurities to form the source and drain regions using the insulated gate and the insulating layer as a mask so as to form a further region of the opposite conductivity type which adjoins the lowly doped extension region remote from the drain region and defines a conduction channel area beneath the insulated gate between the source region and the further region so that the gateable connection of the source and drain regions is provided between the source and further regions.
6. A method according to Claim 5, which comprises defining the insulating layer so as to provide one or more apertures in the insulating layer overlying the lowly doped extension region and introducing the impurities to form the source, drain and further regions of the opposite conductivity type using the insulated gate and the insulating layer as a mask so that two or more further regions connected by the lowly doped extension region are provided between the source and drain regions, with the source region and further region closest to the source region being aligned to opposite edges of the insulated gate.
7. A method according to Claim 5 or 6, which method comprises providing a field plate extending over the insulating layer from the insulated gate towards the drain region.
8. A method according to Claim 5, 6 or 7, which comprises forming the insulating layer by local oxidation of the given surface of the semiconductor body.
9. A method of manufacturing an insulated gate field effect transistor substantially as hereinbefore described with reference to the accompanying drawings.
10. Any novel feature or combination of features described herein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8806014A GB2215515A (en) | 1988-03-14 | 1988-03-14 | A lateral insulated gate field effect transistor and a method of manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8806014A GB2215515A (en) | 1988-03-14 | 1988-03-14 | A lateral insulated gate field effect transistor and a method of manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB8806014D0 GB8806014D0 (en) | 1988-04-13 |
| GB2215515A true GB2215515A (en) | 1989-09-20 |
Family
ID=10633390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8806014A Withdrawn GB2215515A (en) | 1988-03-14 | 1988-03-14 | A lateral insulated gate field effect transistor and a method of manufacture |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2215515A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003047001A1 (en) * | 2001-11-21 | 2003-06-05 | Intersil Americas Inc. | Self-alignment of seperated regions in a lateral mosfet structure of an integrated circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1233545A (en) * | 1967-08-18 | 1971-05-26 | ||
| EP0098652A2 (en) * | 1982-07-05 | 1984-01-18 | Koninklijke Philips Electronics N.V. | Method of manufacturing an insulated gate field effect device and device manufactured by the method |
| EP0187016A2 (en) * | 1984-12-27 | 1986-07-09 | Kabushiki Kaisha Toshiba | MISFET with lightly doped drain and method of manufacturing the same |
| EP0195607A2 (en) * | 1985-03-20 | 1986-09-24 | Fujitsu Limited | Semiconductor device |
-
1988
- 1988-03-14 GB GB8806014A patent/GB2215515A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1233545A (en) * | 1967-08-18 | 1971-05-26 | ||
| EP0098652A2 (en) * | 1982-07-05 | 1984-01-18 | Koninklijke Philips Electronics N.V. | Method of manufacturing an insulated gate field effect device and device manufactured by the method |
| EP0187016A2 (en) * | 1984-12-27 | 1986-07-09 | Kabushiki Kaisha Toshiba | MISFET with lightly doped drain and method of manufacturing the same |
| EP0195607A2 (en) * | 1985-03-20 | 1986-09-24 | Fujitsu Limited | Semiconductor device |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003047001A1 (en) * | 2001-11-21 | 2003-06-05 | Intersil Americas Inc. | Self-alignment of seperated regions in a lateral mosfet structure of an integrated circuit |
| US6822292B2 (en) | 2001-11-21 | 2004-11-23 | Intersil Americas Inc. | Lateral MOSFET structure of an integrated circuit having separated device regions |
| US6974753B2 (en) | 2001-11-21 | 2005-12-13 | Intersil Americas, Inc. | Method of manufacturing lateral MOSFET structure of an integrated circuit having separated device regions |
| US7161223B2 (en) | 2001-11-21 | 2007-01-09 | Intersil Americas Inc. | Integrated circuit with a PN junction diode |
| US7410860B2 (en) | 2001-11-21 | 2008-08-12 | Intersil Americas Inc. | Method of manufacturing lateral MOSFET structure of an integrated circuit having separated device regions |
| US7687336B2 (en) | 2001-11-21 | 2010-03-30 | Intersil Americas Inc. | Method of manufacturing a MOSFET structure |
| USRE44720E1 (en) | 2001-11-21 | 2014-01-21 | Intersil Americas Inc. | Method of manufacturing a MOSFET structure |
| USRE44730E1 (en) | 2001-11-21 | 2014-01-28 | Intersil Americas Inc. | Method of manufacturing a MOSFET structure |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8806014D0 (en) | 1988-04-13 |
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| Date | Code | Title | Description |
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| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |