ES357288A1 - Un metodo de fabricar un dispositivo semiconductor. - Google Patents
Un metodo de fabricar un dispositivo semiconductor.Info
- Publication number
- ES357288A1 ES357288A1 ES357288A ES357288A ES357288A1 ES 357288 A1 ES357288 A1 ES 357288A1 ES 357288 A ES357288 A ES 357288A ES 357288 A ES357288 A ES 357288A ES 357288 A1 ES357288 A1 ES 357288A1
- Authority
- ES
- Spain
- Prior art keywords
- layer
- ion implantation
- field effect
- source
- implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005468 ion implantation Methods 0.000 title abstract 4
- 230000005669 field effect Effects 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000002513 implantation Methods 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010849 ion bombardment Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3814467 | 1967-08-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES357288A1 true ES357288A1 (es) | 1970-03-16 |
Family
ID=10401504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES357288A Expired ES357288A1 (es) | 1967-08-18 | 1968-08-16 | Un metodo de fabricar un dispositivo semiconductor. |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3596347A (es) |
| AT (1) | AT296390B (es) |
| BE (1) | BE719689A (es) |
| BR (1) | BR6801562D0 (es) |
| CH (1) | CH497048A (es) |
| DE (1) | DE1764847B2 (es) |
| ES (1) | ES357288A1 (es) |
| FR (1) | FR1577669A (es) |
| GB (1) | GB1233545A (es) |
| NL (1) | NL6811526A (es) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1244225A (en) * | 1968-12-31 | 1971-08-25 | Associated Semiconductor Mft | Improvements in and relating to methods of manufacturing semiconductor devices |
| US3590471A (en) * | 1969-02-04 | 1971-07-06 | Bell Telephone Labor Inc | Fabrication of insulated gate field-effect transistors involving ion implantation |
| US4005450A (en) * | 1970-05-13 | 1977-01-25 | Hitachi, Ltd. | Insulated gate field effect transistor having drain region containing low impurity concentration layer |
| US3855007A (en) * | 1970-11-13 | 1974-12-17 | Signetics Corp | Bipolar transistor structure having ion implanted region and method |
| GB1355806A (en) * | 1970-12-09 | 1974-06-05 | Mullard Ltd | Methods of manufacturing a semiconductor device |
| US3700978A (en) * | 1971-03-18 | 1972-10-24 | Bell Telephone Labor Inc | Field effect transistors and methods for making field effect transistors |
| US3775191A (en) * | 1971-06-28 | 1973-11-27 | Bell Canada Northern Electric | Modification of channel regions in insulated gate field effect transistors |
| SE361232B (es) * | 1972-11-09 | 1973-10-22 | Ericsson Telefon Ab L M | |
| US3895975A (en) * | 1973-02-13 | 1975-07-22 | Communications Satellite Corp | Method for the post-alloy diffusion of impurities into a semiconductor |
| US3947866A (en) * | 1973-06-25 | 1976-03-30 | Signetics Corporation | Ion implanted resistor having controlled temperature coefficient and method |
| US3873372A (en) * | 1973-07-09 | 1975-03-25 | Ibm | Method for producing improved transistor devices |
| US3959025A (en) * | 1974-05-01 | 1976-05-25 | Rca Corporation | Method of making an insulated gate field effect transistor |
| US4173818A (en) * | 1978-05-30 | 1979-11-13 | International Business Machines Corporation | Method for fabricating transistor structures having very short effective channels |
| DE3003391C2 (de) * | 1980-01-31 | 1984-08-30 | Josef Dipl.-Phys. Dr. 8041 Fahrenzhausen Kemmer | Strahlungsdetektor mit einem passivierten pn-Halbleiterübergang |
| JPS583264A (ja) * | 1981-06-30 | 1983-01-10 | Fujitsu Ltd | 高耐圧半導体集積回路およびその製造方法 |
| DE3138747A1 (de) * | 1981-09-29 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Selbstsperrender feldeffekt-transistor des verarmungstyps |
| GB2215515A (en) * | 1988-03-14 | 1989-09-20 | Philips Electronic Associated | A lateral insulated gate field effect transistor and a method of manufacture |
| US5169796A (en) * | 1991-09-19 | 1992-12-08 | Teledyne Industries, Inc. | Process for fabricating self-aligned metal gate field effect transistors |
| US9324830B2 (en) | 2014-03-27 | 2016-04-26 | International Business Machines Corporation | Self-aligned contact process enabled by low temperature |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3328210A (en) * | 1964-10-26 | 1967-06-27 | North American Aviation Inc | Method of treating semiconductor device by ionic bombardment |
| NL6604962A (es) * | 1966-04-14 | 1967-10-16 | ||
| US3445926A (en) * | 1967-02-28 | 1969-05-27 | Electro Optical Systems Inc | Production of semiconductor devices by use of ion beam implantation |
-
1967
- 1967-08-18 GB GB3814467A patent/GB1233545A/en not_active Expired
-
1968
- 1968-08-14 NL NL6811526A patent/NL6811526A/xx unknown
- 1968-08-16 BR BR201562/68A patent/BR6801562D0/pt unknown
- 1968-08-16 CH CH1233368A patent/CH497048A/de not_active IP Right Cessation
- 1968-08-16 ES ES357288A patent/ES357288A1/es not_active Expired
- 1968-08-17 DE DE1764847A patent/DE1764847B2/de not_active Ceased
- 1968-08-19 FR FR1577669D patent/FR1577669A/fr not_active Expired
- 1968-08-19 AT AT805168A patent/AT296390B/de not_active IP Right Cessation
- 1968-08-19 BE BE719689D patent/BE719689A/xx unknown
- 1968-08-19 US US753449A patent/US3596347A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| BR6801562D0 (pt) | 1973-02-27 |
| FR1577669A (es) | 1969-08-08 |
| AT296390B (de) | 1972-02-10 |
| US3596347A (en) | 1971-08-03 |
| NL6811526A (es) | 1969-02-20 |
| BE719689A (es) | 1969-02-19 |
| GB1233545A (es) | 1971-05-26 |
| CH497048A (de) | 1970-09-30 |
| DE1764847A1 (de) | 1972-02-17 |
| DE1764847B2 (de) | 1974-01-24 |
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