CH362149A - Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung - Google Patents
Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte HalbleitervorrichtungInfo
- Publication number
- CH362149A CH362149A CH362149DA CH362149A CH 362149 A CH362149 A CH 362149A CH 362149D A CH362149D A CH 362149DA CH 362149 A CH362149 A CH 362149A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor device
- manufacturing
- device manufactured
- manufactured
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US413369A US3010857A (en) | 1954-03-01 | 1954-03-01 | Semi-conductor devices and methods of making same |
Publications (1)
Publication Number | Publication Date |
---|---|
CH362149A true CH362149A (de) | 1962-05-31 |
Family
ID=23636964
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH362149D CH362149A (de) | 1954-03-01 | 1955-02-28 | Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung |
Country Status (6)
Country | Link |
---|---|
US (1) | US3010857A (de) |
BE (1) | BE536129A (de) |
CH (1) | CH362149A (de) |
FR (2) | FR1122092A (de) |
GB (1) | GB801713A (de) |
NL (1) | NL103500C (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3109938A (en) * | 1958-03-19 | 1963-11-05 | Rauland Corp | Semi-conductor device having a gas-discharge type switching characteristic |
NL122120C (de) * | 1959-06-30 | |||
NL259311A (de) * | 1959-12-21 | |||
NL263771A (de) * | 1960-04-26 | |||
US3258371A (en) * | 1962-02-01 | 1966-06-28 | Semiconductor Res Found | Silicon semiconductor device for high frequency, and method of its manufacture |
GB1053247A (de) * | 1962-09-04 | |||
GB1074285A (en) * | 1963-01-09 | 1967-07-05 | Mullard Ltd | Improvements in and relating to semiconductor devices |
US4270973A (en) * | 1978-04-27 | 1981-06-02 | Honeywell Inc. | Growth of thallium-doped silicon from a tin-thallium solution |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE466804A (de) * | 1941-12-19 | |||
NL70486C (de) * | 1945-12-29 | |||
BE489418A (de) * | 1948-06-26 | |||
NL82014C (de) * | 1949-11-30 | |||
BE510303A (de) * | 1951-11-16 | |||
US2742383A (en) * | 1952-08-09 | 1956-04-17 | Hughes Aircraft Co | Germanium junction-type semiconductor devices |
NL87620C (de) * | 1952-11-14 |
-
1954
- 1954-03-01 US US413369A patent/US3010857A/en not_active Expired - Lifetime
-
1955
- 1955-02-03 GB GB3219/55A patent/GB801713A/en not_active Expired
- 1955-02-10 NL NL194681A patent/NL103500C/xx active
- 1955-02-10 FR FR1122092D patent/FR1122092A/fr not_active Expired
- 1955-02-15 FR FR1122293D patent/FR1122293A/fr not_active Expired
- 1955-02-28 CH CH362149D patent/CH362149A/de unknown
- 1955-03-01 BE BE536129D patent/BE536129A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
GB801713A (en) | 1958-09-17 |
FR1122092A (fr) | 1956-08-31 |
NL103500C (de) | 1963-01-15 |
BE536129A (de) | 1959-01-02 |
FR1122293A (fr) | 1956-09-04 |
US3010857A (en) | 1961-11-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CH336128A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung | |
CH469358A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung | |
CH367896A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
CH500591A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Vorrichtung | |
CH477765A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung | |
CH334813A (de) | Verfahren zur Herstellung einer eine Legierungselektrode aufweisenden Halbleitervorrichtung und nach dem Verfahren hergestellte Halbleitervorrichtung | |
CH338906A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung und gemäss diesem Verfahren hergestellte Halbleitervorrichtung | |
CH347268A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
CH497048A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung | |
CH349346A (de) | Verfahren zur Herstellung von Halbleitereinrichtungen | |
CH370842A (de) | Verfahren zur Herstellung von Halbleitervorrichtungen | |
CH357470A (de) | Verfahren zur Herstellung von Halbleitervorrichtungen | |
CH335766A (de) | Verfahren zur Herstellung eines Halbleitergerätes | |
CH403991A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
CH381329A (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
CH362149A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung | |
CH411799A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung | |
CH334860A (de) | Verfahren zur Herstellung einer elektrischen Vorrichtung und nach diesem Verfahren hergestellte Vorrichtung | |
CH354168A (de) | Verfahren zur Herstellung einer elektrischen Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung | |
CH445644A (de) | Verfahren zur Herstellung eines Bodens einer Hülle einer Halbleitervorrichtung und nach diesem Verfahren hergestellter Boden | |
CH351031A (de) | Verfahren zur Herstellung von Halbleiter-Vorrichtungen | |
CH394399A (de) | Verfahren zur Herstellung von Halbleitervorrichtungen | |
CH350722A (de) | Verfahren zur Herstellung einer Halbleiter-Vorrichtung | |
CH362751A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
CH368240A (de) | Verfahren zur Herstellung einer Halbleiteranordnung |