CH357470A - Verfahren zur Herstellung von Halbleitervorrichtungen - Google Patents

Verfahren zur Herstellung von Halbleitervorrichtungen

Info

Publication number
CH357470A
CH357470A CH357470DA CH357470A CH 357470 A CH357470 A CH 357470A CH 357470D A CH357470D A CH 357470DA CH 357470 A CH357470 A CH 357470A
Authority
CH
Switzerland
Prior art keywords
semiconductor devices
manufacturing semiconductor
manufacturing
devices
semiconductor
Prior art date
Application number
Other languages
English (en)
Inventor
Denis Sutherland Ronald
Alan Catchpole William
Original Assignee
Standard Telephon & Radio Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB2711156A external-priority patent/GB801442A/en
Application filed by Standard Telephon & Radio Ag filed Critical Standard Telephon & Radio Ag
Priority claimed from GB26120/58A external-priority patent/GB891934A/en
Priority claimed from GB4017558A external-priority patent/GB907942A/en
Priority claimed from GB1262761A external-priority patent/GB909377A/en
Publication of CH357470A publication Critical patent/CH357470A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
CH357470D 1956-09-05 1957-09-05 Verfahren zur Herstellung von Halbleitervorrichtungen CH357470A (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB2711156A GB801442A (en) 1956-09-05 1956-09-05 Improvements in or relating to semi-conductor devices
GB26120/58A GB891934A (en) 1958-08-14 1958-08-14 Improvements in or relating to semi-conductor devices
GB4017558A GB907942A (en) 1958-12-12 1958-12-12 Improvements in or relating to transistors
GB1262761A GB909377A (en) 1961-04-07 1961-04-07 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
CH357470A true CH357470A (de) 1961-10-15

Family

ID=27448152

Family Applications (2)

Application Number Title Priority Date Filing Date
CH357470D CH357470A (de) 1956-09-05 1957-09-05 Verfahren zur Herstellung von Halbleitervorrichtungen
CH8166259A CH377449A (de) 1956-09-05 1959-12-10 Transistor

Family Applications After (1)

Application Number Title Priority Date Filing Date
CH8166259A CH377449A (de) 1956-09-05 1959-12-10 Transistor

Country Status (6)

Country Link
US (2) US2939205A (de)
BE (1) BE560551A (de)
CH (2) CH357470A (de)
DE (1) DE1158179B (de)
FR (1) FR1189146A (de)
NL (1) NL276978A (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3176376A (en) * 1958-04-24 1965-04-06 Motorola Inc Method of making semiconductor device
US3095622A (en) * 1958-06-11 1963-07-02 Clevite Corp Apparatus for manufacture of alloyed semiconductor devices
US3073006A (en) * 1958-09-16 1963-01-15 Westinghouse Electric Corp Method and apparatus for the fabrication of alloyed transistors
NL249576A (de) * 1959-03-18
US3186046A (en) * 1959-06-10 1965-06-01 Clevite Corp Apparatus for the preparation of alloy contacts
CH376187A (de) * 1959-10-13 1964-03-31 Transistor Ag Verfahren zur Herstellung eines Halbleiter-Schaltelementes
US3150013A (en) * 1960-02-17 1964-09-22 Gen Motors Corp Means and method for fabricating semiconductor devices
DE1132660B (de) * 1960-07-06 1962-07-05 Intermetall Legierungsvorrichtung zum Herstellen von Halbleiteranordnungen durch gleich-zeitiges Anlegieren von Elektroden an einander gegenueberliegenden Flaechen eines Halbleiterplaettchens
DE1464669B1 (de) * 1961-03-06 1971-02-04 Itt Ind Gmbh Deutsche Halbleiterdiode mit stark spannungsabhaengiger Kapazitaet
NL278601A (de) * 1961-05-25
US3210225A (en) * 1961-08-18 1965-10-05 Texas Instruments Inc Method of making transistor
US3253098A (en) * 1963-10-24 1966-05-24 Allis Chalmers Mfg Co Mechanical actuator with permanent magnet
US3409482A (en) * 1964-12-30 1968-11-05 Sprague Electric Co Method of making a transistor with a very thin diffused base and an epitaxially grown emitter
US3538401A (en) * 1968-04-11 1970-11-03 Westinghouse Electric Corp Drift field thyristor
US3619736A (en) * 1970-06-22 1971-11-09 Mitsumi Electric Co Ltd Alloy junction transistor and a method of making the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE500302A (de) * 1949-11-30
GB688866A (en) * 1950-10-19 1953-03-18 Gen Electric Co Ltd Improvements in or relating to crystal rectifiers
GB697869A (en) * 1951-05-11 1953-09-30 Post Office Improvements in or relating to methods of mounting piezo-electric elements
US2758261A (en) * 1952-06-02 1956-08-07 Rca Corp Protection of semiconductor devices
US2756483A (en) * 1953-05-11 1956-07-31 Sylvania Electric Prod Junction forming crucible
US2811653A (en) * 1953-05-22 1957-10-29 Rca Corp Semiconductor devices
DE1036393B (de) * 1954-08-05 1958-08-14 Siemens Ag Verfahren zur Herstellung von zwei p-n-UEbergaengen in Halbleiterkoerpern, z. B. Flaechentransistoren
US2895058A (en) * 1954-09-23 1959-07-14 Rca Corp Semiconductor devices and systems
NL97268C (de) * 1955-04-22 1900-01-01
US2796563A (en) * 1955-06-10 1957-06-18 Bell Telephone Labor Inc Semiconductive devices
US2777101A (en) * 1955-08-01 1957-01-08 Cohen Jerrold Junction transistor
NL251064A (de) * 1955-11-04
BE555318A (de) * 1956-03-07
GB800296A (en) * 1956-11-19 1958-08-20 Texas Instruments Inc Manufacture of junction-containing silicon crystals
US2953488A (en) * 1958-12-26 1960-09-20 Shockley William P-n junction having minimum transition layer capacitance
US2937324A (en) * 1959-02-05 1960-05-17 Westinghouse Electric Corp Silicon carbide rectifier

Also Published As

Publication number Publication date
US3040219A (en) 1962-06-19
NL276978A (de)
BE560551A (de)
US2939205A (en) 1960-06-07
FR1189146A (fr) 1959-09-29
CH377449A (de) 1964-05-15
DE1158179B (de) 1963-11-28

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