CH394399A - Verfahren zur Herstellung von Halbleitervorrichtungen - Google Patents

Verfahren zur Herstellung von Halbleitervorrichtungen

Info

Publication number
CH394399A
CH394399A CH538560A CH538560A CH394399A CH 394399 A CH394399 A CH 394399A CH 538560 A CH538560 A CH 538560A CH 538560 A CH538560 A CH 538560A CH 394399 A CH394399 A CH 394399A
Authority
CH
Switzerland
Prior art keywords
semiconductor devices
manufacturing semiconductor
manufacturing
devices
semiconductor
Prior art date
Application number
CH538560A
Other languages
English (en)
Inventor
Earle Moore Gordon
Norton Noyce Robert
Original Assignee
Fairchild Camera Instr Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera Instr Co filed Critical Fairchild Camera Instr Co
Publication of CH394399A publication Critical patent/CH394399A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2252Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/033Diffusion of aluminum
CH538560A 1959-06-30 1960-05-11 Verfahren zur Herstellung von Halbleitervorrichtungen CH394399A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US823838A US3108359A (en) 1959-06-30 1959-06-30 Method for fabricating transistors

Publications (1)

Publication Number Publication Date
CH394399A true CH394399A (de) 1965-06-30

Family

ID=25239870

Family Applications (1)

Application Number Title Priority Date Filing Date
CH538560A CH394399A (de) 1959-06-30 1960-05-11 Verfahren zur Herstellung von Halbleitervorrichtungen

Country Status (5)

Country Link
US (1) US3108359A (de)
CH (1) CH394399A (de)
DE (1) DE1182750B (de)
GB (1) GB908605A (de)
NL (1) NL252131A (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3421206A (en) * 1965-10-19 1969-01-14 Sylvania Electric Prod Method of forming leads on semiconductor devices
US3342884A (en) * 1965-11-18 1967-09-19 Phillips Petroleum Co Novel cyclohexyl derivatives of ethylene and methods for their preparation
US3357871A (en) * 1966-01-12 1967-12-12 Ibm Method for fabricating integrated circuits
DE1564608B2 (de) * 1966-05-23 1976-11-18 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen eines transistors
US4349691A (en) * 1977-04-05 1982-09-14 Solarex Corporation Method of making constant voltage solar cell and product formed thereby utilizing low-temperature aluminum diffusion
US4486946A (en) * 1983-07-12 1984-12-11 Control Data Corporation Method for using titanium-tungsten alloy as a barrier metal in silicon semiconductor processing
US6543617B2 (en) * 2001-03-09 2003-04-08 International Business Machines Corporation Packaged radiation sensitive coated workpiece process for making and method of storing same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2680220A (en) * 1950-06-09 1954-06-01 Int Standard Electric Corp Crystal diode and triode
US2695852A (en) * 1952-02-15 1954-11-30 Bell Telephone Labor Inc Fabrication of semiconductors for signal translating devices
US2796562A (en) * 1952-06-02 1957-06-18 Rca Corp Semiconductive device and method of fabricating same
NL97268C (de) * 1955-04-22 1900-01-01
NL251064A (de) * 1955-11-04
BE550586A (de) * 1955-12-02
US2806983A (en) * 1956-06-01 1957-09-17 Gen Electric Remote base transistor
US2845375A (en) * 1956-06-11 1958-07-29 Itt Method for making fused junction semiconductor devices
BE531769A (de) * 1957-08-07 1900-01-01
US2984775A (en) * 1958-07-09 1961-05-16 Hoffman Electronics Corp Ruggedized solar cell and process for making the same or the like

Also Published As

Publication number Publication date
US3108359A (en) 1963-10-29
NL252131A (de)
GB908605A (en) 1962-10-24
DE1182750B (de) 1964-12-03

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